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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6013DPP R07DS0253EJ0200 Previous: REJ03G1582-0100 Rev.2.00 Feb 04, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.58  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		RJK6013DPP R07DS0253EJ0200 REJ03G1582-0100) PRSS0003AB-A O-220FN) imped9044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6013DPP R07DS0253EJ0200 Previous: REJ03G1582-0100 Rev.2.00 Feb 04, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.58  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		RJK6013DPP R07DS0253EJ0200 REJ03G1582-0100) PRSS0003AB-A O-220FN) PDF