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    Text: • APX bbSBTBl QD2M73D bT4 N AMER PHILIPS/DISCRETE BF989 b7E D J K. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television


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