l6703
Abstract: L6283 l6278 L6284 L6916 l6262 A1658 SVC 561 14 C3041 A1671
Text: RVCT 3.1 Build Tools - Errors and Warnings March 2008 Introduction This document lists the errors and warning messages that can be generated by the Build Tools of the ARM RealView Compilation Tools RVCT version 3.1, including patches. RVCT 3.1 is provided with RVDS
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X3904U:
X3905U:
X3906U:
X3907U:
X3908U:
X3910W:
X3912W:
X3913W:
X3915W:
X3916U:
l6703
L6283
l6278
L6284
L6916
l6262
A1658
SVC 561 14
C3041
A1671
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L6284
Abstract: A1273 L6283 a1046 L6278 L6559 l6262 a1583e A1154 a1273* transistor
Text: RVCT 2.0 Build Tools - Errors and Warnings Release 1.0 – 27th August 2003 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 2.0 and later. If you are using ADS ADS 1.2, 1.1 or 1.0.1 or RVCT 1.2
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L6875W:
L6284
A1273
L6283
a1046
L6278
L6559
l6262
a1583e
A1154
a1273* transistor
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l6703
Abstract: asm 1442 L6916E SVC 561 14 L6232E A1659 a1718 a1694 C2068 STR 6765
Text: RVCT 3.0 SP1 Build Tools - Errors and Warnings Last updated March 2008 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 3.0, 3.0 Service Pack 1, and subsequent 3.0 patches. If you are using ADS
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x3903U:
x3904U:
x3905U:
x3906U:
x3907U:
x3908U:
x3910W:
x3912W:
x3913W:
x3915W:
l6703
asm 1442
L6916E
SVC 561 14
L6232E
A1659
a1718
a1694
C2068
STR 6765
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M67710H
Abstract: M67710
Text: H 11Ô B S Q0173S4 b27 • M IT S U I. RF POWE« MOOOLE M67710H 150-175MHz, 9.6V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm 45+1 42 + 1 2 -R Î.5 ± 0 .3 Z . € ¥ ir> o +f _ ? «0.4 ± 0.2 5+ 1 9±1 9±1 PIN : 5 + 1 8.5 + 1 P in : RF INPUT
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Q0173S4
M67710H
150-175MHz,
M67710H
M67710
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M57797SL
Abstract: No abstract text available
Text: bEHTÖB'i Q0173Ü2 55e! • MITSUBISHI RF POWER MODULE M57797SL 350-380MHZ, 12.5V, 7W, FM PORTABLE RADIO ABSOLUTE MAXIMUM RATINGS Te —25*0 unless otherwise noted Symbol Vcc V bb Icc PinCmax) Po(max) Tc(OP) Tstg Parameter Supply voltage Base bias Total current
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Q0173Ã
M57797SL
350-380MHZ,
200mW
M57797SL
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AD7541
Abstract: E20A
Text: ANALOG DEVICES INC IbE D • ANALO G D E V IC E S ► OflltflDQ Q0173CH 5 ■ CMOS 12-Bit Monolithic Multiplying DAG _ AD7541 1 Scope. This specification covers the detail requirements for a 12-bit monolithic CMOS multiplying digital-to-analog
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D0173CH
12-Bit
AD7541
T-SI-W-12-
/883B
AD7541T
ADI-M-1000:
E20A
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Untitled
Abstract: No abstract text available
Text: ^ 2 4 ^ 2 ^ Q017323 TS3 • MITSUBISHI RFPOWER MODULE M67703H 450-470MHZ, 12.5V, 50W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : Rn VCC1 ®VCC2 ® PO ®GND : RF INPUT : 1st. DC SU P P L Y : 2nd. DC SU P P L Y : RF O U TPU T : FIN
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Q017323
M67703H
450-470MHZ,
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TLM8202
Abstract: No abstract text available
Text: TO S H I B A O I S C R E T E / O P T O } 9097250 T O S H IB A TT D IS C R E T E /O P T O D E « ^0^7250 Q017303 99D 17303 D T - M l - ‘h l ’ TLM8202 2 0 -P 0 IN T 2-CHANNEL BAR PO INT DISPLAY • State of Displays 20-Point (Green : 12-Point, Yellow : 4-Point, Red : 4-Point), 2 Channel Display.
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Q017303
TLM8202
20-Point
12-Point,
M8202
TLM8202
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M67705l
Abstract: No abstract text available
Text: b 2 4 ci fl Stí DD1733E Thb • MITSUBISHI RF POWER MODULE M67705L 400-430MHZ, 9.6V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM 45±1 42±1 2 - R 1 . 5 ± 0 .3 Z . ¥ o _ +1 01 4>0 .4 ± 0.2 5 ±1 9+1 9+ 1 P IN : 5 + 1 8 .5 + 1 P in
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DD1733E
M67705L
400-430MHZ,
M67705l
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Untitled
Abstract: No abstract text available
Text: it N AMER PHILIPS/DISCRETE 25E D bbSHTBl QQ17373 3 • I3 Jl U U 11N4728A to 1N4761A T -U -1 3 X VOLTAGE REGULATOR DIODES The series consits o f 34 types w ith nominal working voltages ranging from 3.3 to 75 V. MECHANICAL DATA Dimensions in mm Fig. 1 DO-41 SOD66 .
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QQ17373
1N4728A
1N4761A
DO-41
7Z78729
Q017374
1N4742A;
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Untitled
Abstract: No abstract text available
Text: 551ô4bô 0017342 172 Final Electrical Specifications LTC1624 High Efficiency SO-8 N -Channel Switching Regulator C ontroller lu m TECHNOLOGY DCSCRICTIOn FenTURcs • N-Channel MOSFET Drive ■ Implements Boost, Step-Down, SEPIC and Inverting Regulators ■ Wide V|n Range: 3.5V to 36V Operation
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LTC1624
200kHz
20-Pin
LTC1435
16-Pin
LTC1436/LTC1436-PLL
24-Pin
LTC1474/LTC1475
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN2677C Monolithic Linear IC LA4700N No. 2677C SA iYO I 2-Channel 12W AF Power Amplifier for Car Stereos Functions • • • • • • • Package Dimensions unit : mm Standby switch function built in Pop noise suppressor built in Thermal shutdown circuit built in
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EN2677C
LA4700N
2677C
3109-SIP18H
7071j
0G17372
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Untitled
Abstract: No abstract text available
Text: CXP5070 SONY. CM O S 4-bit 1 Chip Microcomputer Piggyback type Description CXP5070 is a CMOS 4-bit 1 chip microcomputer of piggyback/evaluator combined type which has been developed for functional evaluation of the CXP5076/CXP5078. Features • Instruction cycle
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CXP5070
CXP5070
CXP5076/CXP5078.
ps/32kHz
27C64
32kHz
Q01730fcj
80-pin
CXPS070
CXP5070â
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ati exm 321
Abstract: sd 7401 xlxxxx DSP1610 TMs 1122 AB14 DSP1618 CXR 726 Microprocessor 100-BQFP aop 741
Text: AT&T Data Sheet May 1995 •= ? ■Microelectronics DSP1618 Digital Signal Processor 1 Features ■ Optimized for digital cellular applications with a bit manipulation unit and an error correction coprocessor for higher signal coding efficiency ■ 20 ns, 25 ns, and 30 ns instruction cycle times at
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DSP1618
mana12
100-Pin
005002b
DSP1618
L45/0
ati exm 321
sd 7401
xlxxxx
DSP1610
TMs 1122
AB14
CXR 726
Microprocessor 100-BQFP
aop 741
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Untitled
Abstract: No abstract text available
Text: DS2435 PRELIMINARY DS2435 DALLAS SEMICONDUCTOR Battery Identification Chip with Time/Temperature Histogram FEATURES PACKAGE OUTLINE • Provides unique ID number to battery packs P R -3 5 PACKAGE • Eliminates thermistors by sensing battery tempera ture on-chip
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DS2435
256-bit
Ebl4130
DS2435
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Untitled
Abstract: No abstract text available
Text: Ö23b32ü 0017300 1 32E D ISIP NPN Silicon Switching Transistor SXT 2222 A SIEMENS/ SPCLi SEMICONDS r - s s '- if • High current gain: 0.1 to 50 0 m A • Low collector-em itter saturation voltage Type M a rk in g O rd e rin g c o d e fo r v e rs io n s in b u lk
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23b32Ã
23b320
Q017312
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Untitled
Abstract: No abstract text available
Text: 35E D • 023^320 0017305 0 « S I P SIPMOS P Channel MOSFET SP0610T SIEMENS/ SPCL-. SEMICONDS _3.5" • SIPM OS - enhancement mode • Drain-source voltage Voi = -60V • Continuous drain current I D = -0.13A • Drain-source on-resistance
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SP0610T
0610T
Q67000-S065
T-37-25
V01Hl
23b320
0Q173Q7
061OT
80f/sÂ
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MPS2222
Abstract: MPS2222A
Text: ft N AMER PHILIPS/DISCRETE - - i - - bbsaiai []Qi?3Qfei T MPS2222 MPS2222A 25E D T - 2 7 - / 5 * SILICON PLANAR EPITAXIAL TRANSISTORS NPN silicon planar epitaxial transistors in a plastic TO-92 envelope primarily intended for linear and switching applications.
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MPS2222
MPS2222A
MPS2907/2907A,
MPS2222
100juA;
OO1730Ã
MPS2222A
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C917
Abstract: 2N3791 2N3792 G017375 2N3792, 2N3715 2N3716
Text: G E SOLID STATE Öl DE | 3075001 0017373 0 | •-U1 3875061 G_E SOLID STATE 01E 17373 D T-33- G eneral-Purpose Power Transistors File Num ber 1059 Silicon P -N -P Epitaxial-Base 2N3791, 2N3792
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2N3791,
2N3792
c5-975i6
RCA-2N3791
2N3792
2N3715
2N3716,
aCJ-19S6S
C917
2N3791
G017375
2N3792,
2N3716
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TAA 981
Abstract: MSM5117400
Text: O K I Semiconductor MSM5 117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5117400 is OKI's CMOS silicon gate process technology.
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MSM5117400
304-Word
MSM5117400
cycles/32ms
A0-A10
b72424D
TAA 981
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Untitled
Abstract: No abstract text available
Text: 19-1268; Rev 0; 8/97 Low-Voltage, Precision Step-Down Controller for Portable CPU Power _ G eneral Description _A pplications ♦ ±1% DC Accuracy Adjustable Mode ♦ Output Overvoltage Crowbar Protection ♦ Output Undervoltage Shutdown
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340kHz
20-Pin
MAX1636EAP
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CF739 R
Abstract: CF739 siemens gaas fet
Text: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain
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023ti3SQ
0G17342
CF739
00MHz
23b32ü
Q017347
CF739
CF739 R
siemens gaas fet
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Untitled
Abstract: No abstract text available
Text: 32E D • fl23fc.320 ÜQL73L3 S « S I P PNP Silicon Switching Transistor SXT 2907 A _ SIEMENS/ SPCL-, SEMICONDS _ * f 3 * 7 -/* • • High current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Type M arking Ordering code fo r
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fl23fc
QL73L3
23b320
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Untitled
Abstract: No abstract text available
Text: BEE d GaAs MMIC • • • • • • • • • • 023b3E0 SIEMENS/ 0Gl?3bQ 3 «SIP SPCLi SEMICONDS CGY50 Single-stage, monolithic microwave IC M M IC amplifier Cascadable 50 i i gain block Application range: 100 MHz to 3 GHz Third order intercept point 30 dBm typical at 1.8 GHz
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023b3E0
CGY50
T-74-13-01
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