Untitled
Abstract: No abstract text available
Text: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node
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FDMC8200
Power33
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Untitled
Abstract: No abstract text available
Text: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node
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FDMC8200
Power33
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POWER33
Abstract: IPCA610D sac 305 IPC-SM-7525A J-STD-001C IPC-A-610D IPC-4101B FDMC8554 IPC-7525 FDMC2523P
Text: AN-9040 Assembly Guidelines for Power33 Packaging By Dennis Lang INTRODUCTION BOARD MOUNTING The Fairchild Power33 uses a flat leaded package to achieve SO-8 type performance in a form factor that is 70% smaller. This packaging technology has been increasingly used for power related
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AN-9040
Power33
IPC-A-610-D,
J-STD-001D,
IPC-SM-7525A,
JESD22-B102D,
FDM3622,
FDM6296,
FDMC2523P,
IPCA610D
sac 305
IPC-SM-7525A
J-STD-001C
IPC-A-610D
IPC-4101B
FDMC8554
IPC-7525
FDMC2523P
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FDMC8200S
Abstract: Power33 byr10-100
Text: FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 20 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing
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FDMC8200S
power33
FDMC8200S
byr10-100
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Untitled
Abstract: No abstract text available
Text: FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 20 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing
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FDMC8200S
power33
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Untitled
Abstract: No abstract text available
Text: FDMC7200 Dual N-Channel PowerTrench MOSFET 30 V, 12 mΩ and 23.5 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 23.5 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node
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FDMC7200
Power33
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6TPF330M9L
Abstract: 6TPF330M 6TPD470M sanyo 6TPF330M9L KTS250B336M55N0T00 6TPF330M9L SANYO POWER56 FAN5236 BAT54 R718
Text: FAIRCHILD SEMICONDUCTOR DUAL POWER56/POWER33DEMO BOARD 1. Description The Dual Power56 and Power33 demo board uses Fairchild Semiconductor’s FAN5236 controller. It may be used to evaluate the performance of Fairchild’s new Power33 3x3MLP and Dual-Power56 (5x6MLP 2-in-1) MOSFETS. The
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POWER56/POWER33DEMO
Power56
Power33
FAN5236
Power33
Dual-Power56
V-21V
2FFAN5236
6TPF330M9L
6TPF330M9L
6TPF330M
6TPD470M
sanyo 6TPF330M9L
KTS250B336M55N0T00
6TPF330M9L SANYO
BAT54
R718
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Untitled
Abstract: No abstract text available
Text: FDMC7200S Dual N-Channel PowerTrench MOSFETs 30 V, 22 mΩ, 10 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a dual power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing
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FDMC7200S
power33
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Untitled
Abstract: No abstract text available
Text: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node
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FDMC8200
Power33
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sot-23 pinout
Abstract: 431 sot23-5 FAN21SV06 11n60f FAN7385 FAN7382 FAN7380 fan3000 5N60 datasheet 4N60 fairchild
Text: Power Seminar 2007 – New Product Update Q3/Q4 Jon Harper, Market Development Manager, Industrial & White Goods Systems, Europe September 2007 www.fairchildsemi.com Products for Power Supplies • • • • • Power33 and Power56 MOSFETs Low input voltage drivers: FAN3xxx
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Power33
Power56
FAN73xx
FAN4800
sot-23 pinout
431 sot23-5
FAN21SV06
11n60f
FAN7385
FAN7382
FAN7380
fan3000
5N60 datasheet
4N60 fairchild
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Untitled
Abstract: No abstract text available
Text: FDMC7200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 22 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing
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FDMC7200S
power33
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CQ116
Abstract: FDMC8200
Text: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node
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FDMC8200
Power33
CQ116
FDMC8200
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2326S
Abstract: No abstract text available
Text: FDMC86160 N-Channel Power Trench MOSFET 100 V, 43 A, 14 mΩ Features General Description Max rDS on = 14 mΩ at VGS = 10 V, ID = 9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC86160
FDMC86160
2326S
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wurth 749022017
Abstract: 749022016 DC1567 DC1814A-B CRCW0402100KJNEA 13W SOT23 CRCW0603100KJNEA fdn8601 schematic diagram 48V power supply Poe POWER33
Text: DEMO MANUAL DC1788A LT4275 LTPoE+, IEEE 802.3at/ IEEE 802.3af Compliant PD Controller DESCRIPTION Demonstration circuit 1788A features the LT 4275, a fourth generation powered device PD controller for Power over Ethernet (PoE) applications. The DC1788A is available in DC1788A-A, DC1788A-B, and
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DC1788A
LT4275
dc1788af
wurth 749022017
749022016
DC1567
DC1814A-B
CRCW0402100KJNEA
13W SOT23
CRCW0603100KJNEA
fdn8601
schematic diagram 48V power supply Poe
POWER33
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AU-6433
Abstract: ISL6251 AU6433-B52-GBL-GR am4825p CN603 CN701 d8107 1000-F50E-02R fdmc4435bz s104 85a
Text: 5 4 3 2 1 D D ACER_BAP51/BAP52 C C MINI-CARD BOARD 2009.06.30 B B A A EE DRAWER DESIGN CHECK RESPONSIBLE SIZE= FILE NAME: XXXX-XXXXXX-XX P/N XXXXXXXXXXXX 5 4 3 2 DATE POWER DATE INVENTEC D-CS-1310A2271201-ALG TITLE BAP51/BAP52 MINI-CARD/B VER: CODE SIZE Custom A01
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BAP51/BAP52
D-CS-1310A2271201-ALG
BAP51/BAP52
CN702
CLK32
P00225
1/16W
TC7SZ08FU
6019B0090701
AU-6433
ISL6251
AU6433-B52-GBL-GR
am4825p
CN603
CN701
d8107
1000-F50E-02R
fdmc4435bz
s104 85a
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88910-5204m
Abstract: ISL6251 AU-6433 AU6433B52-GBL-GR LTT-SS801U-13 AM4825P LG-2413S-2 apl3510a CN901 CN602
Text: 5 4 3 2 1 D D ACER_BAP41/BXP41 C C CARD READER BOARD 2009.06.30 B B A A EE DRAWER DESIGN CHECK RESPONSIBLE SIZE= FILE NAME: XXXX-XXXXXX-XX P/N XXXXXXXXXXXX 5 4 3 2 DATE POWER DATE INVENTEC D-CS-1310A2271201-ALG TITLE BAP41/BXP41 Card Reader/B VER: CODE SIZE
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BAP41/BXP41
D-CS-1310A2271201-ALG
BAP41/BXP41
CN302
6012B0073301
FIX202
FIX201
FIX206
FIX204
FIX203
88910-5204m
ISL6251
AU-6433
AU6433B52-GBL-GR
LTT-SS801U-13
AM4825P
LG-2413S-2
apl3510a
CN901
CN602
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
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Untitled
Abstract: No abstract text available
Text: DTL5A-LC OBSOLETE PRODUCT Features DATEL's DTL5A-LC is a serial-input controlled electronic loads featuring a low compliance voltage operation down to 0.6 Volts ! Similar to DATEL's DTL3A, the DTL5A-LC also offers a loading current range of 0 to 2.0A full scale range with a loading
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Abstract: No abstract text available
Text: FDMC86340 N-Channel Shielded Gate Power Trench MOSFET 80 V, 48 A, 6.5 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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DM-4105
Abstract: DM-4105-1
Text: DM-4105 4½-Digit, Differential LCD Display with Data Outputs www.murata-ps.com enquiries email: [email protected], tel: +1 508 339 3000 DATEL, Inc., Mansfield, MA 02048 USA • Tel: (508)339-3000, (800)233-2765 Fax: (508)339-6356Technical • Email: [email protected]
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DM-4105
DM-4105-1:
RN-3100/4100:
11Internet:
DM-4105
DM-4105-1
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Untitled
Abstract: No abstract text available
Text: FDMC86340 N-Channel Power Trench MOSFET 80 V, 48 A, 6.5 mΩ Features General Description Max rDS on = 6.5 mΩ at VGS = 10 V, ID = 14 A High performance technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has
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Untitled
Abstract: No abstract text available
Text: FDMC86340 N-Channel Shielded Gate Power Trench MOSFET 80 V, 48 A, 6.5 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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Untitled
Abstract: No abstract text available
Text: FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mΩ Features General Description ̈ Max rDS on = 2.5 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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