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    Untitled

    Abstract: No abstract text available
    Text: PPJZ20N50 500V N-Channel MOSFET Voltage 500 V Current TO-3PN 20 A Features      RDS ON , VGS@10V,ID@10A<0.3 Ω 100% avalanche tested Improved dv/dt capability Low Gate Charge Comply with EU RoHS 2011/65/EU only Mechanical Data    


    Original     		PDF PPJZ20N50 2011/65/EU MIL-STD-750 Z20N50 2013-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJZ20N50 500V N-Channel MOSFET Voltage 500 V Current TO-3PN 20 A Features      RDS ON , VGS@10V,ID@10A<0.3 Ω 100% avalanche tested Improved dv/dt capability Low Gate Charge Comply with EU RoHS 2011/65/EU only Mechanical Data    


    Original     		PDF PPJZ20N50 2011/65/EU MIL-STD-750 Z20N50 2013-REV