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    PNZ102F Search Results

    PNZ102F Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PNZ102F Panasonic Silicon NPN Phototransistors Original PDF
    PNZ102F Panasonic Original PDF

    PNZ102F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PN102F

    Abstract: PNZ102F
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo


    Original     		PDF 2002/95/EC) PNZ102F PN102F) PN102F PNZ102F

    PN102F

    Abstract: PNZ102F
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)


    Original     		PDF 2002/95/EC) PNZ102F PN102F) PN102F PNZ102F

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. M Di ain sc te on na tin nc ue e/ d 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)


    Original     		PDF 2002/95/EC) PNZ102F PN102F)

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ102F PN102F Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)  Wide directivity characteristics


    Original     		PDF PNZ102F PN102F)

    circuit LX-700

    Abstract: PNA1401LF PNZ102F
    Text: Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors Unit : mm PNA1401LF ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA typ.


    Original     		PDF PNA1401LF, PNZ102F PNA1401LF PNZ102F) 2856K circuit LX-700 PNA1401LF PNZ102F

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)


    Original     		PDF 2002/95/EC) PNZ102F PN102F)

    PNA1401LF

    Abstract: PNZ102F
    Text: Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors Unit : mm PNA1401LF ø4.6±0.15 M Di ain sc te on na tin nc ue e/ d 4.5±0.2 For optical control systems Features 12.7 min. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l


    Original     		PDF PNA1401LF, PNZ102F PNA1401LF PNA1401LF PNZ102F

    PNZ335

    Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
    Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)


    Original     		PDF PNA3W01L PN307) PNZ313 PN313) PNZ300F PN300F) PNZ313B PN313B) PNZ323 PN323) PNZ335 PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F