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    IRG4IBC30UD

    Abstract: PD917
    Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original
    PDF PD91753A IRG4IBC30UD O-220 IRG4IBC30UD PD917

    Untitled

    Abstract: No abstract text available
    Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original
    PDF PD91753A IRG4IBC30UD O-220

    IGBT IRG4IBC30UD

    Abstract: IRG4IBC30UD IGBT collector voltage 5kV ir*c30ud PD917
    Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original
    PDF PD91753A IRG4IBC30UD O-220 Absol20 IGBT IRG4IBC30UD IRG4IBC30UD IGBT collector voltage 5kV ir*c30ud PD917

    IRG4IBC30UD

    Abstract: No abstract text available
    Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original
    PDF PD91753A IRG4IBC30UD O-220 Absol52-7105 IRG4IBC30UD