IC MARKING A60
Abstract: IC 741 cn
Text: fa427S25 0D452bl *NECE MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 9 0 0 L ,4 2 S 1 7 9 0 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE P R E L IM IN A R Y DESCRIPTIO N The NEC # PD42S16900L and n PD42S17900L are 2 097 152 words by 9 b its dynamic CMOS RAM
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fa427S25
0D452bl
uPD42S16900L
uPD42S17900L
//PD42S16900L)
b427525
004EbBL>
475mil)
P32VF-100-475A
P32VF-100-475A
IC MARKING A60
IC 741 cn
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KF50
Abstract: No abstract text available
Text: b427525 D0H2243 c172 « N E Œ MOS INTEGRATED CIRCUIT , u P D 4 2 S 1 6 9 0 0 , 4 2 S 1 7 9 0 0 16 M BIT D Y N A M IC RAM FAST PAGE M O DE PRELIMINARY DESCRIPTION The NEC ¿¿PD42S16900 and ¿¿PD42S17900 are 2 097 152 words by 9 b its dynamic CMOS RAM with optional fa s t page mode. CMOS sense anpl i f ier, peripheral c ir c u it s and 1 tra n s is to r
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b427525
D0H2243
uPD42S16900
uPD42S17900
PD42S16900)
475mil)
P32VF-100-475A
P32VF-100-475A
KF50
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Untitled
Abstract: No abstract text available
Text: blE D • b4E?525 ODBMOOfi ^ 2 HNECE NEC Electronics Inc. _ N E C ELECTRONICS INC Description The devices listed below are fast-page dynamic RAMs organized as 2M words by 9 bits and designed to operate from a single power supply. Optional features
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42S16900
42S17900
uPD421x900/L
uPD42S1x900/L
jjPD421x
900/L,
42S1x
900/L
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A4017
Abstract: 8SFM-7B11B LE-60
Text: NEC fiPD421x900/L, 42S1X900/L X = 6, 7 2,097,152 X 9-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 2M words by 9 bits and designed to operate from a single power supply. Optional features
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uPD421x900/L
uPD42S1X900/L
42S16900
42S17900
9001Power
ffPD421x900/L,
42S1X900/L
jjPD421x
900/L,
A4017
8SFM-7B11B
LE-60
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