Untitled
Abstract: No abstract text available
Text: PA886C02 30A (20V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching
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PA886C02
SC-65
500ns,
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Untitled
Abstract: No abstract text available
Text: PA886C02 30A (20V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching
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PA886C02
SC-65
500ns,
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pa886c02
Abstract: No abstract text available
Text: PA886C02 30A (20V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching
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PA886C02
SC-65
500ns,
pa886c02
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Untitled
Abstract: No abstract text available
Text: PA886C02 30A (20V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching
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PA886C02
SC-65
500ns,
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com PA886C02R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage Average output current Non-repetitive forward surge current*
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PA886C02R
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PA886C02
Abstract: SC-65 VR139
Text: PA886C02 30A (20V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching
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PA886C02
SC-65
500ns,
PA886C02
SC-65
VR139
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XLR wiring
Abstract: RCA JACK balun rca SPDIF balun 75 ohm PA883 xlr diameter utp video balun
Text: PA882, PA883, PA886 Series SPDIF Digital Audio Baluns SPDIF SIGNAL SOURCE ETS PA882 SPDIF SIGNAL SOURCE ETS PA883 VIDEO P ATCH BAY VIDEO DIST. AMP ETS PA883 RECEIVING EQUIPMENT ETS PA883 RECEIVING EQUIPMENT COAX 75 OHM STP TYPICAL USE S DIAGRAM Features/Advantages
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PA882,
PA883,
PA886
PA882
PA883
PA883
XLR wiring
RCA JACK
balun rca
SPDIF
balun 75 ohm
xlr diameter
utp video balun
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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pa886c
Abstract: No abstract text available
Text: DATE DRAWN FEB.-26-‘ 07 CHECKED FEB.-26-‘ 07 CHECKED FEB.-26-‘ 07 NAME APPROVED DWG.NO. T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric D e v i c e Te c h n o lo g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
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PA886C02R
MS5D3028
H04-004-03a
pa886c
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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TL130
Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009
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ERA82-004
SC802-04
SC802-06
SC802-09
ERA83-004
ERA83-006
ERA81-004
ERA84-009
ERA85-009
CB803-03
TL130
tc122 25 8 4
yg802c10
SD883-04
SD833-04
LM3661TL-1.40
TC8520
tc9145
TS802C09
ERA82-004
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G-160B
Abstract: pg123s15 2FI300A-060 yg121s15 6RI50E-080M5 PA905C6 2fi300a esja18-08 ERD81-004 ESJA83-16A
Text: Notice of Scheduled Discontinuation of Products Because we are unable to ensure the continued production and maintenance of some manufacturing equipment for our semiconductor products, the products for which stable production and sufficient reliability are expected to become difficult will be discontinued as
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A837C04,
PA847C04
PA886C02
YA846C04
ERD75-*
ERE75-*
SID01-*
SIE01-*
ERG75-*
SIG01-*
G-160B
pg123s15
2FI300A-060
yg121s15
6RI50E-080M5
PA905C6
2fi300a
esja18-08
ERD81-004
ESJA83-16A
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yg802c10
Abstract: LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04
Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps. 接合保存温度
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O220AB
O220F
TS805C04
TS805C06
TP805C04
ESAC83-004
ESAC83M-004R
ESAC83M-006R
YG805C04R
YG805C06R
yg802c10
LM3661TL-1.40
YG803C04
YG803C06
TL1115
tc-118 sd
TL130
YG805C10
YG835C04
YG811S04
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a509
Abstract: 05AE
Text: PA886C02 3 oa k ->3 SCHOTTKY BARRIER DIODE : Features • te V F Low V f • x 4^r tr- K*f* c ssi* Super high speed sw itching. • (=<fctAiHKtt Connection Diagram High reliability by planer design. • S i i s : A pplications High speed pow er sw itching.
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PA886C02
pera180
a509
05AE
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PA886C02
Abstract: COLLMER SEMICONDUCTOR
Text: PA886C02 30A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching ■ Maximum Ratings & Characteristics • Absolute Maximum Ratings
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PA886C02
Q003CJ72
PA886C02
COLLMER SEMICONDUCTOR
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A509
Abstract: PA886C02 SC-65
Text: PA886C02 3 oa SCHOTTKY BARRIER DIODE ’ Features • ifc V F Low V f Super high speed sw itching. mmm&m C onnection Diagram • TV — High reliability by planer design. I Applications H r ^ ci High speed pow er sw itching. 4 - ] h <> (D <!» (D ! M a xim u m Ratings and Characteristics
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PA886C02
PA886C02
A509
SC-65
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A509
Abstract: 451C 32i0 PA886C02 SC-65
Text: PA886C02 3 oa SCHOTTKY BARRIER DIODE ’ Features • ifc V F Low V f Super high speed sw itching. m m m &m • TV — Connection Diagram High reliability by planer design. r ^ h H4-] <!» <> (D (D I Applications ci High speed pow er sw itching. ! Maximum Ratings and Characteristics
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PA886C02
A509
451C
32i0
SC-65
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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ESAB82-004
Abstract: ESAB82M-004 ESAB82M-006 ESAB85-009 KP823C04 KS823C04 TP801C04 TP801C06 YG801C04 YG801C06
Text: Schottky-Barrier Diodes Dual package Ratings and characteristics Type M axim um ratin§ V lo rrm Volts KS823C04 40 KP823C04 40 40 If s h # 2 *1 Am ps. Am ps. 5.0 Tc=87°C 5.0 Tc=87°C) 5.0 Tc=103°C) Therm al rating Tj and Tstg °c -40 t o +125 Characteristics Ta=25°C)
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KS823C04
KP823C04
TP801C04
TP801C06
ESAB82-004
ESAB82M-004
ESAB82M-006
O-220
O-22QAB
O-22QF17
ESAB85-009
YG801C04
YG801C06
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Untitled
Abstract: No abstract text available
Text: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04
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1c-79
c-85C
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Untitled
Abstract: No abstract text available
Text: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6
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TS802C06
TS802C09
TP802C04
TP802C06
TP802C09
ESAC82-004
ESAC82M-004
O-22QF15
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ERG81-004
Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Text: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *
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ERA82-004
ERA83-004
ERA81-004
ERA83-006
ERA84-009
ERA85-009
ERB83-004
ERB81-004
ERB83-006
ERB84-009
ERG81-004
ERB38-D
ESAC6
YG802C04
ESAD33-02
ERA18
era-84
YG811S0
YG802C06
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,
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ERA82-004
ERA83-004
ERA81-004
ERB83-004
ERC81-004
ERC81S-004
ERC80-004
ERC62-004
ERC80M-004
ERC62M-004
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