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    NVD4810N Search Results

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    NVD4810N Price and Stock

    onsemi NVD4810NT4G

    MOSFET N-CH 30V 9A/54A DPAK
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    DigiKey NVD4810NT4G Reel
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    Rochester Electronics NVD4810NT4G 8 1
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    onsemi NVD4810NT4G-VF01

    MOSFET N-CH 30V 9A/54A DPAK
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    onsemi NVD4810NT4G-TB01

    MOSFET N-CH 30V 9A/54A DPAK-3
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    onsemi NVD4810NT4GVF01

    Power Field-Effect Transistor, 9A I(D), 30V, 0.0157ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA NVD4810NT4GVF01 50,000
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    NVD4810N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NVD4810NT4G On Semiconductor NVD4810 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    NVD4810NT4G-TB01 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 54A DPAK Original PDF
    NVD4810NT4G-VF01 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 54A DPAK Original PDF

    NVD4810N Datasheets Context Search

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    PPAP

    Abstract: 4810N
    Text: NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4810N


    Original     		PDF NTD4810N, NVD4810N AEC-Q101 NTD4810N/D PPAP 4810N

    Untitled

    Abstract: No abstract text available
    Text: NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4810N


    Original     		PDF NTD4810N, NVD4810N NTD4810N/D