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    NTE29 Price and Stock

    NTE Electronics Inc NTE2987

    Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220
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    Verical NTE2987 12 12
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    Arrow Electronics NTE2987 12 1
    • 1 $1.142
    • 10 $1.1187
    • 100 $1.094
    • 1000 $1.0917
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    NTE Electronics Inc NTE294

    Bipolar Transistor, Pnp, -50V To-92; Transistor Polarity:Pnp; Collector Emitter Voltage Max:50V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:200Mhz Rohs Compliant: No |Nte Electronics NTE294
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    NTE Electronics Inc NTE290

    Bipolar Transistor, Pnp, -30V To-92; Transistor Polarity:Pnp; Collector Emitter Voltage Max:30V; Continuous Collector Current:800Ma; Power Dissipation:600Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-; Msl:-Rohs Compliant: Yes |Nte Electronics NTE290
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    Bristol Electronics NTE290 12 2
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    NTE290 2
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    Quest Components NTE290 14
    • 1 $1.5133
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    NTE290 9
    • 1 $4
    • 10 $2.5
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    NTE290 1
    • 1 $2.485
    • 10 $2.485
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    NTE Electronics Inc NTE298

    Transistor, Bipolar, Pnp, 80V, 500Ma, To-92-3; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-Rohs Compliant: Yes |Nte Electronics NTE298
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    NTE Electronics Inc NTE293

    Transistor Npn Silicon 60V Ic=1A Giant To-92 Case Audio Amp + Driver Compl To Nte294 |Nte Electronics NTE293
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    NTE29 Datasheets (77)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE29 NTE Electronics NPN Silicon Complementary Transistor High Power, High Current Switch Original PDF
    NTE290 NTE Electronics Silicon Complementary Transistor Audio Power Amplifier, Switch Original PDF
    NTE290 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, Audio Power Amp and Switch, Pkg Style U83/TO92 Scan PDF
    NTE2900 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2902 NTE Electronics N-Channel Silicon Junction Field Effect Transistor Original PDF
    NTE290A NTE Electronics Silicon Complementary Transistor Audio Power Amplifier Original PDF
    NTE290A NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, Audio Power Amp, Pkg Style TO92 Scan PDF
    NTE291 NTE Electronics Silicon Complementary Transistor Medium Power Amp, Switch Original PDF
    NTE291 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, General Purpose Medium Power Amp & Switch, Pkg Style TO220 Scan PDF
    NTE292 NTE Electronics Silicon Complementary Transistor Medium Power Amp, Switch Original PDF
    NTE292 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, General Purpose Medium Power Amp & Switch, Pkg Style TO220 Scan PDF
    NTE2920 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2921 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2922 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2923 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2924 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE293 NTE Electronics Silicon Complementary Transistor Audio Amplifier and Driver Original PDF
    NTE293 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, Audio Amp and Driver, Pkg Style Giant TO92 Scan PDF
    NTE2930 NTE Electronics MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF
    NTE2931 NTE Electronics MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF

    NTE29 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NTE295

    Abstract: No abstract text available
    Text: NTE295 Silicon NPN Transistor RF Power Output, Driver Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V


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    NTE295 500mA 500mA, 27MHz, 526-NTE295 NTE295 PDF

    NTE2906

    Abstract: NTE2998 NTE290
    Text: NTE2906 MOSFET N−Channel, Enhancement Mode High Speed Switch Compl to NTE2998 D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified)


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    NTE2906 NTE2998) NTE2906 NTE2998 NTE290 PDF

    NTE2976

    Abstract: DIODE 240v 3a mosfet for dc to ac inverter
    Text: NTE2976 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Input Capacitance D Low Static RDS on D Fast Switching Time D Guaranteed Avalanche Resistance Applications: D Switching Power Supply of AC 240V Input D High Voltage Power Supply


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    NTE2976 NTE2976 DIODE 240v 3a mosfet for dc to ac inverter PDF

    NTE2974

    Abstract: No abstract text available
    Text: NTE2974 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low On–State Resistance: RDS on = 1.1Ω Max (VGS = 10V, ID = 3A) D Low Input Capacitance: Ciss = 1150pF Typ D High Avalanche Capability Ratings D Isolated TO220 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


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    NTE2974 1150pF NTE2974 PDF

    NTE2940

    Abstract: No abstract text available
    Text: NTE2940 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Low Static Drain−Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package Absolute Maximum Ratings:


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    NTE2940 NTE2940 PDF

    NTE2966

    Abstract: No abstract text available
    Text: NTE2966 MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: D Motor Control D Lamp Control D Solenoid Control D DC-DC Converter Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain-Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V


    Original
    NTE2966 00A/s NTE2966 PDF

    NTE2980

    Abstract: 77A DIODE
    Text: NTE2980 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D Fast Switching D TO251 Type Package Absolute Maximum Ratings: Drain Current, ID


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    NTE2980 00A/s, NTE2980 77A DIODE PDF

    700v 5A mosfet

    Abstract: computer smps circuit MOSFET 700V 10A NTE2958 313C
    Text: NTE2958 MOSFET N−Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC−DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: TC = +25°C unless otherwise specified


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    NTE2958 700v 5A mosfet computer smps circuit MOSFET 700V 10A NTE2958 313C PDF

    NTE2996

    Abstract: No abstract text available
    Text: NTE2996 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Ultra Low On-Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous VGS = 10V


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    NTE2996 00A/s, NTE2996 PDF

    nte2909

    Abstract: No abstract text available
    Text: NTE2909 MOSFET N−Channel, Enhancement Mode High Speed Switch Description: The NTE2909 is a Power MOSFET in a TO220 type package that utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with


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    NTE2909 NTE2909 80A/s, PDF

    NTE2954

    Abstract: No abstract text available
    Text: NTE2954 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Low Gate Charge: 147nC Typ D Low Reverse Transfer Capacitance: 300pF Typ D Fast Switching D 100% Avalanche Tested D Imporved dv/dt Capability Absolute Maximum Ratings: TC = +25°C unless otherwise specified


    Original
    NTE2954 147nC 300pF NTE2954 PDF

    NTE2956

    Abstract: No abstract text available
    Text: NTE2956 MOSFET N−Channel, Enhancement Mode High Speed Switch Applications: D SMPS D AC Adapter D Power Supply for Printer, Copies, TV, VCR, etc. Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain−Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V


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    NTE2956 NTE2956 PDF

    NTE2975

    Abstract: ISD28A
    Text: NTE2975 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Advanced Process Technology D Ultra Low On−State Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings:


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    NTE2975 NTE2975 ISD28A PDF

    NTE2996

    Abstract: No abstract text available
    Text: NTE2996 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous VGS = 10V


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    NTE2996 NTE2996 PDF

    computer smps circuit

    Abstract: MOSFET IGSS 100A 900v mosfet MOSFET 900V 2A NTE2959
    Text: NTE2959 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: TC = +25°C unless otherwise specified


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    NTE2959 computer smps circuit MOSFET IGSS 100A 900v mosfet MOSFET 900V 2A NTE2959 PDF

    N-Channel 40V MOSFET 32a

    Abstract: NTE293 NTE2932 213A
    Text: NTE2932 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS on : 0.071Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 200V


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    NTE2932 N-Channel 40V MOSFET 32a NTE293 NTE2932 213A PDF

    NTE2930

    Abstract: NTE293
    Text: NTE2930 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS on : 0.032Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 100V


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    NTE2930 NTE2930 NTE293 PDF

    74w datasheet

    Abstract: MOSFET 400V NTE2934
    Text: NTE2934 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS on : 0.254Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 400V


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    NTE2934 74w datasheet MOSFET 400V NTE2934 PDF

    NTE293

    Abstract: NTE2931
    Text: NTE2931 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS on : 0.144Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 200V


    Original
    NTE2931 NTE293 NTE2931 PDF

    077W

    Abstract: NTE2936 NTE293
    Text: NTE2936 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS on : 0.308Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 500V


    Original
    NTE2936 077W NTE2936 NTE293 PDF

    NTE295

    Abstract: No abstract text available
    Text: NTE295 Silicon NPN Transistor RF Power Output, Driver Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V


    Original
    NTE295 500mA 500mA, 27MHz, NTE295 PDF

    NTE2998

    Abstract: p-channel 200V
    Text: NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original
    NTE2998 NTE2998 p-channel 200V PDF

    NTE2995

    Abstract: No abstract text available
    Text: NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D RDS on = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applications: D High Current, High Speed Switching D Ideal for Off−Line Power Supplies, Adaptor and PFC


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    NTE2995 NTE2995 PDF

    200v 5A mosfet

    Abstract: 700v 5A mosfet MOSFET 700V 10A NTE2958 computer smps circuit 5A 700V MOSFET MOSFET 30A 700V
    Text: NTE2958 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: TC = +25°C unless otherwise specified


    Original
    NTE2958 200v 5A mosfet 700v 5A mosfet MOSFET 700V 10A NTE2958 computer smps circuit 5A 700V MOSFET MOSFET 30A 700V PDF