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    NTD2955P Price and Stock

    onsemi NTD2955PT4G

    MOSFET P-CH 60V 12A DPAK
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    DigiKey NTD2955PT4G Cut Tape 1
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    NTD2955PT4G Reel 2,500
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    NTD2955P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTD2955PT4G On Semiconductor NTD2955 - TRANSISTOR 12 A, 60 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3, FET General Purpose Power Original PDF

    NTD2955P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nt2955g

    Abstract: NTP2955G nt 2955g 2955G STD2955T4G DPak Package size NTD2955 application note 369D-01
    Text: NTD2955, NTD2955P, STD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    PDF NTD2955, NTD2955P, STD2955 NTD2955/D nt2955g NTP2955G nt 2955g 2955G STD2955T4G DPak Package size NTD2955 application note 369D-01

    nt2955g

    Abstract: nt 2955g
    Text: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    PDF NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g

    nt2955g

    Abstract: nt 2955g 2955G
    Text: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    PDF NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g 2955G

    nt2955g

    Abstract: nt 2955g 2955G ntd2955g NVD2955 NTP2955G NVD2955T4G NTD2955T
    Text: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    PDF NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g 2955G ntd2955g NTP2955G NVD2955T4G NTD2955T

    2955g

    Abstract: nt 2955g nt2955g NTD2955 application note NTD2955G 2955G DPAK equivalent ntd2955 NTD2955-001 ntd2955t4g 369D
    Text: NTD2955, NTD2955P Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, highspeed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge


    Original
    PDF NTD2955, NTD2955P NTD2955/D 2955g nt 2955g nt2955g NTD2955 application note NTD2955G 2955G DPAK equivalent ntd2955 NTD2955-001 ntd2955t4g 369D