d1413
Abstract: NP22N055SHE np22n055 NP22N055HHE NP22N055IHE mj1550 NP22N055S
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE, NP22N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect PART NUMBER Transistors designed for high current switching NP22N055HHE
|
Original
|
NP22N055HHE,
NP22N055IHE,
NP22N055SHE
NP22N055HHE
NP22N055IHE
O-251
O-252
O-251)
d1413
NP22N055SHE
np22n055
NP22N055HHE
NP22N055IHE
mj1550
NP22N055S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. PART NUMBER
|
Original
|
NP22N055HHE,
NP22N055IHE
NP22N055HHE
NP22N055IHE
O-251
O-252
O-251)
|
PDF
|
NP22N055HHE
Abstract: NP22N055IHE transistor types full
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. PART NUMBER
|
Original
|
NP22N055HHE,
NP22N055IHE
O-251
NP22N055HHE
O-252
O-251)
NP22N055HHE
NP22N055IHE
transistor types full
|
PDF
|
NP22N055HHE
Abstract: NP22N055IHE
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
|
Original
|
NP22N055HHE,
NP22N055IHE
O-251
NP22N055HHE
O-252
NP22N055HHE
NP22N055IHE
|
PDF
|
2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
|
Original
|
|
PDF
|
TO-252 MOSFET p channel
Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering
|
Original
|
NL-5612
S-18322
F-78142
E-28007
NP-S-NEWS109V30
TO-252 MOSFET p channel
NP80N03CLE
NP80N03DLE
NP80N03ELE
NP80N04CHE
NP80N04DHE
NP80N04EHE
NP84N04CHE
NP84N04DHE
NP84N04EHE
|
PDF
|
NP22N055HHE
Abstract: NP22N055IHE NP22N055SHE
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
mc10087f1
Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.
|
Original
|
IR260/WS260/HS350
IR260/HS350
mc10087f1
mc-10041
mc-10043
MC-10087F1-XXX
MC-10044
MC-10051BF1
2SC5664
2SC5292
UPC1701C
mc-10059
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
TO-252 MOSFET p channel
Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive
|
Original
|
Q3/2001
NL-5612
S-18322
F-78142
E-28007
NP-S-NEWS071V50
TO-252 MOSFET p channel
nec 288
powermosfet Gate Drive
STR 1504
TO-262 MOSFET
NP80N03CLE
NP80N03DLE
NP80N04CHE
NP80N04DHE
NP84N04CHE
|
PDF
|
