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    NE721S01 Search Results

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    NE721S01 Price and Stock

    NEC Electronics Group NE721S01-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics NE721S01-T1 1,000
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    California Eastern Laboratories (CEL) NE721S01

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics NE721S01 2 1
    • 1 $11.2
    • 10 $11.2
    • 100 $11.2
    • 1000 $11.2
    • 10000 $11.2
    		Buy Now
    Quest Components NE721S01 1
    • 1 $15
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    NE721S01 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE721S01 NEC Semiconductor Selection Guide Original PDF
    NE721S01 NEC General purpose L to X-band GaAs MESFET. Idss 20 to 120 mA. Original PDF
    NE721S01-T1 NEC General purpose L to X-band GaAs MESFET. Idss 20 to 120 mA. Original PDF
    NE721S01-T1B NEC General purpose L to X-band GaAs MESFET. Idss 20 to 120 mA. Original PDF

    NE721S01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s-parameter s11 s12 s21 10000

    Abstract: nec 151 C10535E NE721S01 NE721S01-T1 NE721S01-T1B nec 7912 um 741 AN 17821 audio
    Text: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7 dB TYP. @f = 12 GHz PACKAGE DIMENSIONS • Gate Length: Lg = 0.8 µm recessed gate (Unit: mm) • Gate Width: Wg = 330 µm


    Original     		PDF NE721S01 NE721S01-T1 NE721S01-T1B s-parameter s11 s12 s21 10000 nec 151 C10535E NE721S01 NE721S01-T1 NE721S01-T1B nec 7912 um 741 AN 17821 audio

    NE721S01

    Abstract: NE721S01-T1B x-band microwave fet
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE721S01 OUTLINE DIMENSIONS Units in mm • HIGH POWER GAIN: 7 dB TYP at 12 GHz PACKAGE OUTLINE S01 2.0 ± 0.2 • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz 2. • LG = 0.8 µm, WG = 330 µm 1 ± 2 0. • LOW PHASE NOISE:


    Original     		PDF NE721S01 NE721S01 18e-12 1e-10 7e-12 055e-12 24-Hour NE721S01-T1B x-band microwave fet

    Untitled

    Abstract: No abstract text available
    Text: NE721S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Q1 0.58nH Rdx 0.06 ohms Rgx 0.71nH 0.06 ohms Lsx 0.1nH CGS_PKG 0.055pF CDS_PKG 0.06PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters


    Original     		PDF 001pF 055pF NE721S01 1e-14 6e-12 18e-12 1e-10 7e-12 055e-12 36e-10

    NE721S01

    Abstract: nec d 882 p nec d 882 p datasheet NE721S01-T1 NE721S01-T1B CBS 922
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE721S01 OUTLINE DIMENSIONS Units in mm • HIGH POWER GAIN: 7 dB TYP at 12 GHz PACKAGE OUTLINE S01 • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz 2.0 ± 0.2 2. • LG = 0.8 µm, WG = 330 µm 1 ± DESCRIPTION


    Original     		PDF NE721S01 NE721S01 18e-12 1e-10 7e-12 055e-12 24-Hour nec d 882 p nec d 882 p datasheet NE721S01-T1 NE721S01-T1B CBS 922

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    low noise, hetero junction fet

    Abstract: NE76038 UPB1506 NE721S01 UPC2711 2,5GHz oscillator Prescalers NE329S01 NE429M01 NE696M01
    Text: DBS Receiver NEW! NEW! NE429M01 Hetero Junction FET NE76038 MESFET • 6 pin super minimold package • Available on tape and reel • Low cost plastic package • Available on tape and reel UPC2711/12TB IF Amplifiers • Now available in smaller, lower cost SOT-363 packages


    Original     		PDF NE429M01 NE76038 UPC2711/12TB OT-363 NE696M01 NE329S01 NE721S01 UPC2781GR 520MHz 20MHz low noise, hetero junction fet NE76038 UPB1506 NE721S01 UPC2711 2,5GHz oscillator Prescalers NE329S01 NE429M01 NE696M01

    uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Text: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。


    Original     		PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    NE325S01

    Abstract: NE334S01 NE721S01 NE43 NE425S01 NE434S01
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S01 2.0 ± 0.2 2. 1 ± 2 0. 2 4 0.5 TYP 2.0±0.2 3 0.65 TYP 1.9 ± 0.2 1.6 0.125 ± 0.05 1.5 MAX 0.4 MAX 4.0 ± 0.2 PART NUMBER MARKING


    Original     		PDF NE325S01 NE334S01 NE425S01 NE434S01 NE721S01 24-Hour NE325S01 NE334S01 NE721S01 NE43 NE425S01 NE434S01

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    LTA 703 S

    Abstract: EM 408 gps beta e 555
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET OUTLINE DIMENSIONS FEATURES • NE721S01 Units in mm HIGH POWER GAIN: P A C K A G E OUTLINE S 01 7 d B TYP at 12 GHz • HIGH OUTPUT POWER: • Lg = 0.8 |_im, W g = 330 |_im 15 dBm TYP at 12 GHz • LOW PHASE NOISE:


    OCR Scan     		PDF NE721S01 NE721S01 24-Hour LTA 703 S EM 408 gps beta e 555

    nec 2501 904

    Abstract: AN 17821 audio nec 303 j fet nec 7912
    Text: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7dBTYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 /xm recessed gate • Gate Width: Wg = 330 • fim Plastic package ORDERING INFORMATION


    OCR Scan     		PDF NE721S01 NE721S01-T1 E721S01-T1B nec 2501 904 AN 17821 audio nec 303 j fet nec 7912

    nec gaas fet marking

    Abstract: No abstract text available
    Text: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7 dB TYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 ¿¡m recessed gate • Gate Width: Wg = 330 ¿¡m • Plastic package PACKAGE DIMENSIONS


    OCR Scan     		PDF NE721S01 NE721S01-T1 NE721S01-T1B C10535E) IR30-00 nec gaas fet marking

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01

    x band GaAs MESFET 261

    Abstract: No abstract text available
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES_ • Units in mm HIGH POWER GAIN: PACKAGE OUTLINE S01 HIGH OUTPUT POWER: • Lg = 0.8 nm, W g = 330 nm • OUTLINE DIMENSIONS 7 dB TYP at 12 GHz • • NE72is o i 15 dBm TYP at 12 GHz


    OCR Scan     		PDF NE72is NE721S01 1e-14 6e-12 18e-12 1e-10 7e-12 055e-12 36e-10 x band GaAs MESFET 261

    NE67383

    Abstract: No abstract text available
    Text: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1


    OCR Scan     		PDF NE33200 NE67300 NE71300 NE76000 NE76100 NE76083A NE33284A NE25118 NE25139 NE25339 NE67383

    NE334S01

    Abstract: E7138 nec microwave NE76084 NE67383
    Text: NEC is a global force in the dozens of satellites around the world. j and engineering services are all geared to computer, communications and home CEL’s Space/Hi Rel Management Group | helping you get your designs off paper and electronics markets. The company’s products


    OCR Scan     		PDF