NE69039 Search Results

NE69039 Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
NE69039	NEC	NPN silicon epitaxial transistor.	Original	PDF
NE69039	NEC	Semiconductor Selection Guide	Original	PDF
NE69039FB-T1	NEC	NPN Silicon Epitaxial Transistor for L-Band Low-Power Amplifier	Original	PDF
NE69039-T1	NEC	NPN SILICON EPITAXIAL TRANSISTOR	Original	PDF
NE69039-T1	NEC	NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER	Original	PDF
NE69039-T1-A	California Eastern Laboratories	NPN SILICON EPITAXIAL TRANSISTOR	Original	PDF

NE69039 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NE68839 Abstract: NE68939 NE69039 NE69039-T1-A PC2771T Text: NEC'S NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 • 4 PIN MINI MOLD PACKAGE: NE69039 +0.2 2.8 -0.3	Original	NE69039 NE69039 NE68839 NE68939 NE69039-T1-A PC2771T	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: NE68839 NE68939 NE69039 NE69039-T1 PC2771T RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 • 4 PIN MINI MOLD PACKAGE: NE69039	Original	NE69039 NE69039 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ NE68839 NE68939 NE69039-T1 PC2771T RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ	PDF
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Abstract: NE68839 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Text: SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE 39 • 4 PIN MINI MOLD PACKAGE: NE69039	Original	NE69039 NE69039 -j100 24-Hour RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ NE68839 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 • 4 PIN MINI MOLD PACKAGE: NE69039	Original	NE69039 NE69039 -j100 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: UPC277 NE68839 NE68939 NE69039 NE69039-T1 PC2771T upc27 Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE69039	Original	NE69039 NE69039 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ UPC277 NE68839 NE68939 NE69039-T1 PC2771T upc27	PDF
ic sc 4145 Abstract: 62629 ic 3524 datasheet NE68939 NE69039 NE69039-T1 nec 8339 Text: DATA SHEET SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE69039 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.	Original	NE69039 NE69039 ic sc 4145 62629 ic 3524 datasheet NE68939 NE69039-T1 nec 8339	PDF
mobile phone basic block diagram Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT	PDF
MU 350 Abstract: IC 7443 datasheet nec 3012 NE68939 NE68939-T1 NE69039 74245 20 pin ic 74626 30057 Text: DATA SHEET SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE68939 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.	Original	NE68939 NE68939 MU 350 IC 7443 datasheet nec 3012 NE68939-T1 NE69039 74245 20 pin ic 74626 30057	PDF
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic	PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77	PDF
2SK2396 Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××）品名 µPC8119T アプリケーション移動通信電源電圧電流周波数	Original	X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711	PDF
uPD16305 Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.	Original	PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943	PDF
nf025 Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920	Original	X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: PC2771T NE68839 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2.tx transistor Text: SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939	Original	NE68939 NE68939 9-j11 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ PC2771T NE68839 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2.tx transistor	PDF

ne3511s02 s2p Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan	Original	07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N	PDF
transistor marking T79 ghz Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority	Original	PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book	PDF
nec b1007 Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,	Original	NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G	PDF
marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817	PDF
m33 tf 130 Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539 Text: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP	Original	NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539	PDF
IN510 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE68939 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939	Original	NE68939 NE68939 DEC-j50 -j100 9-j11 24-Hour IN510	PDF
UPG137 Abstract: 2746 transistor NE34018 NE68818 UPC2745 UPC2771T UPC8112T UPG152TA sot26 sot363 transistor Text: PCS NEW! NEW! NE34018 HEMT • Low cost plastic package • + 30 dBm Output IP3 • -18 dB Input Return Loss • 0.8 dB Noise Figure • 16 dB Associated Gain UPC8112T Downconverter UPC2745 /46TB Buffer Amps • 3 V operation • 13 dB typ Conversion Gain	Original	NE34018 UPC8112T UPC2745 /46TB OT-363 UPG152TA 30dBm OT-26 UPG137 /138GV 2746 transistor NE34018 NE68818 UPC2771T UPG152TA sot26 sot363 transistor	PDF
uPD72002-11 Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508 Text: 品名別検索検索ツール 1. ツールバーのアイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して，検索 F をクリックしてください。	Original	PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508	PDF
NE68839 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP 0 F = 1.9 GHz, Vce = 3.6 V, Class AB, Duty 1/8 Units in mm PACKAGE OUTLINE 39 +0.2 2 .8 4 PIN MINI MOLD PACKAGE: NE69039	OCR Scan	NE69039 NE69039 24-Hour NE68839	PDF
NE68839 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIALTRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F= 1.9 GHz, V c e = 3.6 V, Class AB, Duty 1/8 Units in mm PACKAGE OUTLINE 39 4 PIN MINI MOLD PACKAGE: NE69039	OCR Scan	NE69039 NE69039 NE69039-T1 NE68839 NE68939 uPC2771T NE6S939 NE68839	PDF

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NE69039 Search Results

NE69039 Datasheets (6)

NE69039 Datasheets Context Search

NE68839

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

ic sc 4145

mobile phone basic block diagram

MU 350

FET marking code g5d

nec mosfet marked v75

2SK2396

uPD16305

nf025

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

ne3511s02 s2p

transistor marking T79 ghz

nec b1007

marking code C1E SMD Transistor

m33 tf 130

IN510

UPG137

uPD72002-11

NE68839

NE68839