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    NDP6060 Price and Stock

    onsemi NDP6060

    MOSFET N-CH 60V 48A TO220-3
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    DigiKey NDP6060 Tube 647 1
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    Avnet Americas NDP6060 Tube 16 Weeks 800
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    Mouser Electronics NDP6060 1,380
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    Newark NDP6060 Bulk 1,967 1
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    Future Electronics NDP6060 Tube 800 17 Weeks 50
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    Onlinecomponents.com NDP6060
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    Rochester Electronics NDP6060 800 1
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    Richardson RFPD NDP6060 800
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    New Advantage Corporation NDP6060 550 1
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    onsemi NDP6060L

    MOSFET N-CH 60V 48A TO220-3
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    DigiKey NDP6060L Tube 5 1
    • 1 $3.94
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    Avnet Americas NDP6060L Tube 60 16 Weeks 50
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    Mouser Electronics NDP6060L 4,718
    • 1 $3.12
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    Verical NDP6060L 600 50
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    NDP6060L 469 209
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    Newark NDP6060L Bulk 366 1
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    Quest Components NDP6060L 80
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    Rochester Electronics NDP6060L 469 1
    • 1 $1.53
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    TME NDP6060L 1
    • 1 $2.95
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    Richardson RFPD NDP6060L 800
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    Avnet Asia NDP6060L 16 Weeks 800
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    Avnet Silica NDP6060L 17 Weeks 50
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    EBV Elektronik NDP6060L 18 Weeks 50
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    Master Electronics NDP6060L 1,600
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    National Semiconductor Corporation NDP6060L

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    Bristol Electronics NDP6060L 2,231
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    Quest Components NDP6060L 1,784
    • 1 $4
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    National Semiconductor Corporation NDP6060

    TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,48A I(D),TO-220AB
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    Quest Components NDP6060 36
    • 1 $3.81
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    Others NDP6060L

    AVAILABLE EU
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    ComSIT USA NDP6060L 400
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    Find more NDP6060 price and stock on Findchips.com

    NDP6060 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDP6060 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDP6060 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDP6060 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDP6060 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDP6060L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDP6060L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDP6060L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDP6060L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDP6060L_NL Fairchild Semiconductor 60V N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDP6060_NL Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDP6060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP6060 NDB6060

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP6060L NDB6060L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L

    Untitled

    Abstract: No abstract text available
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP6060L NDB6060L

    zener diode 3.0 b2

    Abstract: F63TNR m 9835 tnr 220 zener diodes color coded CBVK741B019 EO70 FDP7060 L86Z NDB6060L
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP6060L NDB6060L zener diode 3.0 b2 F63TNR m 9835 tnr 220 zener diodes color coded CBVK741B019 EO70 FDP7060 L86Z NDB6060L

    NDB6060

    Abstract: NDP6060 zener diode 11 b1
    Text: N March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially


    Original     		PDF NDP6060 NDB6060 NDB6060 zener diode 11 b1

    A24100

    Abstract: CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060 NDP4060L NDP6060
    Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP6060 NDB6060 A24100 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060 NDP4060L

    zener diode 3.0 b2

    Abstract: 6.8 B2 zener m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060 NDP4060L
    Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP6060 NDB6060 zener diode 3.0 b2 6.8 B2 zener m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060 NDP4060L

    ndp6060l

    Abstract: NDB6060L
    Text: N April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		PDF NDP6060L NDB6060L NDB6060L

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    IRFZ44N complementary

    Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
    Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55


    Original     		PDF BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    12SnOFC

    Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
    Text: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF HUF75343P3 HUF75542P3 HUF75631P3 HUF75645P3 HUF75939P3 HUF76107P3 HUF76132P3 HUF76143P3 HUF76419P3 HUF76432P3 12SnOFC BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    NDB6060

    Abstract: NDP6060
    Text: M a rc h 1 9 9 6 N NDP6060 / NDB6060 N-Channel Enhancement M ode Field Effect Transistor General Description Features T hese N -C hannel en h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP6060 NDB6060 NDB6060

    Untitled

    Abstract: No abstract text available
    Text: A p r il 1 9 9 6 N ational Semiconductor~ NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese lo g ic level N -C hannel e n h a n ce m e n t m o d e p o w e r fie ld e ffect tra n s isto rs are p ro d u ce d using


    OCR Scan     		PDF NDP6060L NDB6060L

    Untitled

    Abstract: No abstract text available
    Text: April 1996 N NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese logic level N -C hannel e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDP6060L NDB6060L 34bTb74

    Untitled

    Abstract: No abstract text available
    Text: March 1996 N NDP6060 / NDB6060 N-Channel Enhancement M ode Field Effect Transistor General Description Features These N -C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are p ro d u c e d using N a tio n a l's p ro p rie ta ry , hig h cell d e n s ity , D M O S te c h n o lo g y .


    OCR Scan     		PDF NDP6060 NDB6060

    Untitled

    Abstract: No abstract text available
    Text: M M a rc h 1996 National Semiconductorm NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor G eneral D escriptio n Features These N -C hannel e n h a n ce m e n t m o d e p o w e r fie ld • 4 8A , 60V. RDSI0N = 0 .0 2 5Q @ VGS= 10V. e ffect tra n s is to rs are p ro d u c e d u sing N a tio n a l's


    OCR Scan     		PDF NDP6060 NDB6060

    NDP6060L

    Abstract: NDB6060L
    Text: gC M National Semiconductor A p ril 19 96 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National s proprietary, high cell density, DMOS


    OCR Scan     		PDF NDP6060L/ NDB6060L bS0ii30 0040EÃ NDP6060L NDB6060L

    Untitled

    Abstract: No abstract text available
    Text: March 1996 N NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features T hese N -C hannel en h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP6060 NDB6060 NDB6060

    N55C

    Abstract: NDB6060 NDB6060L NDP6060L
    Text: April 1996 N N D P6060L / N D B 6060L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T h e se logic le v e l N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field effe c t tra n s is to rs are p ro d u c e d u sin g


    OCR Scan     		PDF NDP6060L NDB6060L NDP6060LRev. NDB6060LRev. 34bTb74 N55C NDB6060 NDB6060L

    sith

    Abstract: NDP6060L
    Text: April 1996 N N D P6060L / N D B 6060L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF P6060L 6060L NDP6060L NDB6060L sith