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    N6491 Search Results

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    N6491 Price and Stock

    onsemi 2N6491G

    TRANS PNP 80V 15A TO220
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    DigiKey 2N6491G Tube 299 1
    • 1 $1.56
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    • 1000 $0.47007
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    Avnet Americas 2N6491G Bulk 17 Weeks, 1 Days 1
    • 1 $1.07
    • 10 $0.871
    • 100 $0.698
    • 1000 $0.486
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    2N6491G Tube 14 Weeks 1,700
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    Mouser Electronics 2N6491G 4,569
    • 1 $1.15
    • 10 $0.637
    • 100 $0.56
    • 1000 $0.441
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    Newark 2N6491G Bulk 113 1
    • 1 $0.54
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    • 1000 $0.457
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    TME 2N6491G 36 1
    • 1 $0.894
    • 10 $0.746
    • 100 $0.582
    • 1000 $0.481
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    ComSIT USA 2N6491G 350
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    Avnet Asia 2N6491G 14 Weeks 1,700
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    Avnet Silica 2N6491G 850 15 Weeks 50
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    EBV Elektronik 2N6491G 16 Weeks 50
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    Master Electronics 2N6491G 2,300
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    New Advantage Corporation 2N6491G 850 1
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    Microchip Technology Inc 1N649-1-TR

    DIODE GEN PURP 600V 400MA DO35
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    DigiKey 1N649-1-TR Cut Tape 206 1
    • 1 $2.52
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    • 100 $2.34
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    1N649-1-TR Reel 355
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    Microchip Technology Inc 1N6491

    DIODE GEN PURP 600V 400MA DO35
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    DigiKey 1N6491 Bulk 100
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    Avnet Americas 1N6491 Bulk 28 Weeks 100
    • 1 $12.7008
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    • 100 $11.739
    • 1000 $11.71262
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    Newark 1N6491 Bulk 100
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    NAC 1N6491 26
    • 1 $13.62
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    • 100 $12.35
    • 1000 $11.29
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    Avnet Silica 1N6491 24 Weeks 382
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    EBV Elektronik 1N6491 30 29 Weeks 100
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    Master Electronics 1N6491
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    • 100 $12.7
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    Microchip Technology Inc JAN1N649-1

    DIODE GEN PURP 600V 400MA DO35
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    Microchip Technology Inc JAN1N649-1 5,164 22 Weeks
    • 1 $15.64
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    Ameya Holding Limited JAN1N649-1 97
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    NAC JAN1N649-1 120
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    Avnet Silica JAN1N649-1 24 Weeks 120
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    EBV Elektronik JAN1N649-1 23 Weeks 120
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    Master Electronics JAN1N649-1 194
    • 1 $27.93
    • 10 $27.93
    • 100 $17.46
    • 1000 $17.46
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    Microchip Technology Inc JAN1N649-1-TR

    DIODE GEN PURP 600V 400MA DO35
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    N6491 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LA6551

    Abstract: HM200 HM2001 HM0-009
    Text: 注文コードNo.N6 4 9 1 N6491 11001 新 モノリシックリニア集積回路 LA6551 CDプレーヤ用 4チャネルブリッジ BTL ドライバ LA6551はCDプレーヤ用に開発した4chブリッジ (BTL) ドライバである。 機能および特長


    Original
    PDF N6491 LA6551 LA6551CD4ch 45max HM0010 HM0011 HM0012 LA6551 HM200 HM2001 HM0-009

    2N6488 MOTOROLA

    Abstract: 1N5825 221A-06 2N6487 2N6488 2N6490 2N6491 2N6497 MSD6100 ISS-20
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon P lastic Power Transistors 2N 6488* PNP . . . designed for use in general-purpose amplifier and switching applications. 2N 6490 2 N6491* • DC Current Gain Specified to 15 Amperes —


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    PDF 2N6487 2N6490 2N6488 2N6491 O-220AB 2N6490 2N6491 2N6488 MOTOROLA 1N5825 221A-06 2N6497 MSD6100 ISS-20

    diode 4483

    Abstract: 1N4471
    Text: 1 N 4 4 6 0 thru 1N4496 and N 6 4 8 5 thru ^ 1 Micmemi Corp. / J SANTA ANA, CA For more information call: 714 979-8220 The diode experts SCOTTSDALE, AZ ☆JANS* 1.5 WATT GLASS ZENER DIODES FE A T U R E S • • • • • • • • M ic ro m in iatu re p ack age.


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    PDF 1N4496 N6491 diode 4483 1N4471

    1N4474

    Abstract: 1N4475 2B25 1N4478 1N4460 1N4469 1N4467 1N4466
    Text: 1 N 4 4 6 0 thru 1N 4496 and 1 N 6 4 8 5 thru N6491 Microsemi Corp. sco riM K iu :. a / s i \ / ! I \ i r,i ☆ ¡ANS* I or m o r e m in i m a im n v . iil' f 7 l4 i FEATURES • • • • • • • • 1.5 WATT GLASS ZENER DIODES M icrom iniature package.


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    PDF 1N6491 IL-S-19500/406. N6491 1N4474 1N4475 2B25 1N4478 1N4460 1N4469 1N4467 1N4466

    Untitled

    Abstract: No abstract text available
    Text: r z 7 SCS-THOMSON ^7# 2N6486/87/88 2N6489/90/91 K iltgœ iLiûra *! COMPLEMENTARY SILICON POWER TRANSISTORS . 2N6487, 2N6488, 2N6489 AND 2N6490 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N6486, 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors mounted in Jedec


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    PDF 2N6486/87/88 2N6489/90/91 2N6487, 2N6488, 2N6489 2N6490 2N6486, 2N6487 2N6488 T0-220

    2N6488 MOTOROLA

    Abstract: 2N6488 power amplifier circuit 2N0491 2N8487 2N6487 2N0490
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon Plastic Power Transistors 2N 6488* PNP . . designed for use in general-purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes — hpE = 20-150 @ lc » 5.0 Adc


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    PDF 2N6487 2N6490 2N6488 2N6491 T0-220AB 2N6490 2N6487, 2N6488 MOTOROLA 2N6488 power amplifier circuit 2N0491 2N8487 2N0490

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    PDF 38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175