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Abstract: No abstract text available
Text: MS2362 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 1025 - 1150 MHz GOLD METALIZATION POUT = 75 WATTS GP = 7.5 dB MINIMUM INTERNAL INPUT MATCHING INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON BASE CONFIGURATION
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MS2362
MS2362
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TACAN transistor
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2362 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • • • • • DESIGNED FOR HIGH POWER PULSED IFF, DME, AND TACAN APPLICATIONS
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MS2362
MS2362
TACAN transistor
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TACAN
Abstract: M105 MS2362 TACAN transistor
Text: MS2362 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS2362 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The MS2362 is packaged in
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MS2362
MS2362
TACAN
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TACAN transistor
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TACAN
Abstract: dme 2000 TACAN transistor
Text: MS2362 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Symbol VCBO VCES VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS TCASE = 25°C
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MS2362
MSC1668
TACAN
dme 2000
TACAN transistor
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2362 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 1025 - 1150 MHz GOLD METALIZATION POUT = 75 WATTS GP = 7.5 dB MINIMUM INTERNAL INPUT MATCHING
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MS2362
MS2362
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