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    Advanced Semiconductor Inc MRF652S

    RF Bipolar Transistors RF Transistor
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    MRF652 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF652 Motorola RF POWER TRANSISTORS NPN SILICON Original PDF
    MRF652 Motorola European Master Selection Guide 1986 Scan PDF
    MRF652 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF652 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MRF6522-10 Motorola MRF6522-10R1 RF Power Transistor Original PDF
    MRF6522_10_D Motorola MRF6522-10R1 960 MHz, 10 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF6522-10R1 Motorola 960 MHz, 10 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF6522-5 Motorola MRF6522-5R1 RF Power Transistor Original PDF
    MRF6522_5_D Freescale Semiconductor MRF6522-5R1 RF Power Transistor Original PDF
    MRF6522-5R1 Motorola RF Power Field Effect Transistor Original PDF
    MRF6522-60 Motorola RF Power Field Effect Transistor Original PDF
    MRF6522-60 Motorola MRF6522-60 RF Power Transistor Original PDF
    MRF6522_60_D Freescale Semiconductor MRF6522-60 RF Power Transistor Original PDF
    MRF6522-70 Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    MRF6522-70 Freescale Semiconductor MRF6522-70R3 921-960 MHz, 70 W, 26 V Original PDF
    MRF6522-70 Motorola RF Power Field Effect Transistor Original PDF
    MRF6522-70 Motorola MRF6522-70 RF Power Transistor Original PDF
    MRF6522-70 Motorola RF Power Field Effect Transistors Scan PDF
    MRF6522-70R3 Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    MRF6522-70R3 Freescale Semiconductor RF Power Field Effect Transistor Original PDF

    MRF652 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF6522-5

    Abstract: MOSFET J132 mosfet j142 J132 mosfet 5r1 mosfet transistor transistor zo 607 ZO 607 MA MRF6522-5R1 smd transistor 2x 4 581 transistor motorola
    Text: MOTOROLA RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A and Class AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–5R1 has been specifically designed for use in Communications Network GSM base stations. The


    Original     		PDF MRF6522-5R1 MRF6522 31JUL04 31JAN05 MRF6522-5 MOSFET J132 mosfet j142 J132 mosfet 5r1 mosfet transistor transistor zo 607 ZO 607 MA MRF6522-5R1 smd transistor 2x 4 581 transistor motorola

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use


    Original     		PDF MRF6522 31JUL04 31JAN05

    Untitled

    Abstract: No abstract text available
    Text: <zSs.mi- 2onductoi <U~ to ducts., LJYLC. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN Silicon RF Power Transistors MRF652 MRF652S MAXIMUM RATINGS Rating Symbol Value Unit Vdo Collector-Emitter Voltage


    Original     		PDF MRF652 MRF652S -65to 15Vdc,

    921 smd transistor

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522-70R3 MRF6522 921 smd transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522 - 70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522−70R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performances of this device makes it ideal for large–signal, common source


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522â MRF6522-10R1

    Untitled

    Abstract: No abstract text available
    Text: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522-

    MRF652S

    Abstract: No abstract text available
    Text: MRF652S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF652S is Designed for UHF large signal, amplifier Applications in FM equipment up to 512 MHz. PACKAGE STYLE .280 4L PILL FEATURES: A • Common Emitter • PG = 10 dB at 5.0 W/512 MHz • Omnigold Metalization System


    Original     		PDF MRF652S MRF652S

    SPS 16-H

    Abstract: BC847 LP2951 MRF6522-70 MRF6522-70R3 SMD potentiometer
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3 SPS 16-H BC847 LP2951 MRF6522-70 MRF6522-70R3 SMD potentiometer

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522-

    sem 2005

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–60/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-60 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz and specified for the GSM 925 – 960 MHz band. The high


    Original     		PDF MRF6522â MRF6522-60 sem 2005

    "RF MOSFET"

    Abstract: BC847 LP2951 MRF6522-70 MRF6522-70R3
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3 "RF MOSFET" BC847 LP2951 MRF6522-70 MRF6522-70R3

    j327

    Abstract: MRF6522-60 motorola rf device data book 360B-04 "RF MOSFET" MOTOROLA ELECTROLYTIC CAPACITOR motorola ups schematic MRF184 2001RF
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–60/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-60 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz and specified for the GSM 925 – 960 MHz band. The high


    Original     		PDF MRF6522 MRF6522-60 j327 MRF6522-60 motorola rf device data book 360B-04 "RF MOSFET" MOTOROLA ELECTROLYTIC CAPACITOR motorola ups schematic MRF184 2001RF

    MRF6522-10

    Abstract: MRF6522-10R1 10R1 Ni200 mosfet 4496
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522 MRF6522-10R1 MRF6522-10 MRF6522-10R1 10R1 Ni200 mosfet 4496

    j608

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use in Communications Network GSM base stations. The package offers the


    Original     		PDF MRF6522 Inductance66 31JUL04 31JAN05 j608

    Untitled

    Abstract: No abstract text available
    Text: MRF652 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)36 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition)15


    Original     		PDF MRF652

    LP2951

    Abstract: BC847 921 smd transistor
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6522 - 70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522−70R3 N - Channel Enhancement - Mode Lateral MOSFET Freescale Semiconductor, Inc. Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522 LP2951 BC847 921 smd transistor

    MOS marking JC

    Abstract: SOT c5 87 BC847 EB212 LP2951 MRF6522-70 MRF6522-70R3 marking amplifier j02 smd transistor marking C14 r
    Text: Document Number: MRF6522-70 Rev. 9, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6522-70R3 LIFETIME BUY Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522--70 MRF6522-70R3 MOS marking JC SOT c5 87 BC847 EB212 LP2951 MRF6522-70 MRF6522-70R3 marking amplifier j02 smd transistor marking C14 r

    j608

    Abstract: 10R1 MRF6522-10R1
    Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522 MRF6522-10R1 j608 10R1 MRF6522-10R1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF652/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistors MRF652 M RF652S Designed for 12.5 Vdc UHF large-signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz.


    OCR Scan     		PDF MRF652/D MRF652 RF652S

    RE7Z

    Abstract: MRF652
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF652 MRF652S NPN Silicon RF Power Transistors . . designed for 12.5 Vdc UHF large-signal, amplifier applications in industrial and com ­ mercial FM equipm ent operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics


    OCR Scan     		PDF MRF652 MRF652S MRF652 MRF652, RE7Z