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    MR2A16A Search Results

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    MR2A16A Price and Stock

    Everspin Technologies MR2A16ACYS35

    IC RAM 4MBIT PARALLEL 44TSOP2
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    DigiKey MR2A16ACYS35 Tray 1,527 1
    • 1 $32.05
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    • 100 $28.1765
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    Mouser Electronics MR2A16ACYS35 385
    • 1 $31.28
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    Verical MR2A16ACYS35 135 135
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    Quest Components MR2A16ACYS35 355
    • 1 $60.926
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    TME MR2A16ACYS35 44 1
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    Win Source Electronics MR2A16ACYS35 9,648
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    Everspin Technologies MR2A16AVMA35

    IC RAM 4MBIT PARALLEL 48FBGA
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    DigiKey MR2A16AVMA35 Tray 1,353 1
    • 1 $36.89
    • 10 $34.211
    • 100 $28.18638
    • 1000 $27.40695
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    Mouser Electronics MR2A16AVMA35
    • 1 $36.29
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    Verical MR2A16AVMA35 101 1
    • 1 $34.11
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    Arrow Electronics MR2A16AVMA35 101 20 Weeks 1
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    Everspin Technologies MR2A16AVYS35

    IC RAM 4MBIT PARALLEL 44TSOP2
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    DigiKey MR2A16AVYS35 Tray 957 1
    • 1 $29.77
    • 10 $26.43
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    Mouser Electronics MR2A16AVYS35 204
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    EBV Elektronik MR2A16AVYS35 49 Weeks 135
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    Everspin Technologies MR2A16AYS35

    IC RAM 4MBIT PARALLEL 44TSOP2
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    DigiKey MR2A16AYS35 Tray 904 1
    • 1 $25.61
    • 10 $22.734
    • 100 $20.407
    • 1000 $20.18748
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    Mouser Electronics MR2A16AYS35 148
    • 1 $25.57
    • 10 $22.74
    • 100 $20.19
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    Quest Components MR2A16AYS35 144
    • 1 $64.26
    • 10 $64.26
    • 100 $49.8015
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    MR2A16AYS35 8
    • 1 $39.072
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    • 10 $26.34
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    Everspin Technologies MR2A16AMA35

    IC RAM 4MBIT PARALLEL 48FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MR2A16AMA35 Tray 680 1
    • 1 $21.09
    • 10 $20.138
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    EBV Elektronik MR2A16AMA35 49 Weeks 348
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    MR2A16A Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MR2A16A Freescale Semiconductor 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Original PDF
    MR2A16A Freescale Semiconductor MRAM Advanced Technical Data Original PDF
    MR2A16ACMA35 Everspin Technologies Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 48FBGA Original PDF
    MR2A16ACMA35R Everspin Technologies Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 48FBGA Original PDF
    MR2A16ACYS35 Everspin Technologies Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 44TSOP Original PDF
    MR2A16ACYS35 Freescale Semiconductor MRAM 4-MB TSOP IND 35NS Original PDF
    MR2A16ACYS35R Everspin Technologies Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 44TSOP Original PDF
    MR2A16AMA35 Everspin Technologies Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 48FBGA Original PDF
    MR2A16AMA35R Everspin Technologies Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 48FBGA Original PDF
    MR2A16AMYS35 Everspin Technologies Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 44TSOP Original PDF
    MR2A16AMYS35R Everspin Technologies Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 44TSOP Original PDF
    MR2A16ATS35C Freescale Semiconductor Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 44TSOP Original PDF
    MR2A16ATS35CR Freescale Semiconductor Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 44TSOP Original PDF
    MR2A16AVMA35 Everspin Technologies Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 48FBGA Original PDF
    MR2A16AVMA35R Everspin Technologies Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 48FBGA Original PDF
    MR2A16AVYS35 Everspin Technologies Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 44TSOP Original PDF
    MR2A16AVYS35 Freescale Semiconductor MRAM 4-MB TSOP EXT 35NS Original PDF
    MR2A16AVYS35R Everspin Technologies Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 44TSOP Original PDF
    MR2A16AYS35 Everspin Technologies Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 44TSOP Original PDF
    MR2A16AYS35 Freescale Semiconductor MRAM 4-MB TSOP COM 35NS Original PDF

    MR2A16A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MR2A16A

    Abstract: MR2A16ATS35C
    Text: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 6, 11/2007 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The


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    PDF MR2A16A 16-Bit MR2A16A 304-bit MR2A16ATS35C

    digital blood pressure circuit diagram

    Abstract: digital blood pressure monitor circuit diagram digital blood pressure circuit diagram of layout microcontroller digital blood pressure digital blood pressure circuit diagram using microcontroller blood pressure circuit schematic f-16 pulse king simple microcontroller digital blood pressure circuit MPXV5050GP blood pressure measurement digital circuit
    Text: Blood Pressure Monitor Using the Flexis QE128 Family Design Reference Manual Devices Supported: MC9S08QE128 MCF51QE128 MPR083 MR2A16A MC9S08JM60 MC13202 MPXV5050 Document Number: DRM101 Rev. 0 07/2008 How to Reach Us: Home Page: www.freescale.com E-mail: [email protected]


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    PDF QE128 MC9S08QE128 MCF51QE128 MPR083 MR2A16A MC9S08JM60 MC13202 MPXV5050 DRM101 CH370 digital blood pressure circuit diagram digital blood pressure monitor circuit diagram digital blood pressure circuit diagram of layout microcontroller digital blood pressure digital blood pressure circuit diagram using microcontroller blood pressure circuit schematic f-16 pulse king simple microcontroller digital blood pressure circuit MPXV5050GP blood pressure measurement digital circuit

    Untitled

    Abstract: No abstract text available
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


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    PDF MR2A16A AEC-Q100 MR2A16A 304-bit EST00193 Rev10

    MR2A16A

    Abstract: MR2A16ACYS35R mr2a16acma35 MR2A16AMA35 MR2A16AYS35 MR2A16ACYS35 MR2A16AVYS35 400-mil
    Text: MR2A16A 256Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


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    PDF MR2A16A 256Kx16 20-years 44-TSOP 48-BGA MR2A16A MR2A16ACYS35R mr2a16acma35 MR2A16AMA35 MR2A16AYS35 MR2A16ACYS35 MR2A16AVYS35 400-mil

    MR2A16A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 3, 6/2006 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The


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    PDF MR2A16A 16-Bit 304-bit MR2A16A

    MR2A16A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Advance Information MR2A16A/D Rev. 0.1, 7/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output


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    PDF MR2A16A/D 16-Bit MR2A16A 304-bit

    MR2A16A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Advance Information MR2A16A/D Rev. 0.1, 7/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresitive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output


    Original
    PDF MR2A16A/D 16-Bit MR2A16A 304-bit MR2A16A/D

    Untitled

    Abstract: No abstract text available
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original
    PDF MR2A16A AEC-Q100 MR2A16A 304-bit EST00193 Rev10

    MR2A16ATS

    Abstract: MR2A16A
    Text: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 6, 11/2007 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The


    Original
    PDF MR2A16A 16-Bit MR2A16A 304-bit MR2A16ATS

    MR2A16AMYS35

    Abstract: MR2A16A MR2A16AMA35
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


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    PDF MR2A16A AEC-Q100 MR2A16A 304-bit MR2A16AMYS35 MR2A16AMA35

    MR2A16A

    Abstract: No abstract text available
    Text: Advance Information MR2A16A/D 2/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresitive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output enable (G) pins,


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    PDF MR2A16A/D 16-Bit MR2A16A 304-bit MR2A16A/D

    MR2A16AC

    Abstract: tsop 48 PIN type2 MR2A16AMY MRAM MR2A16ACYS35R 44TSOP mr2a16amys35 MR2A16ATS35 MR2A16A 012MAX
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


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    PDF MR2A16A 20-years AEC-Q100 MR2A16A 304-bit MR2A16horized MR2A16AC tsop 48 PIN type2 MR2A16AMY MRAM MR2A16ACYS35R 44TSOP mr2a16amys35 MR2A16ATS35 012MAX

    MR2A16A

    Abstract: MR2A16AMA35 6726 power transistor MR2A16ACMA35 MR2A16ATS35C
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original
    PDF MR2A16A 20-years MR2A16A 304-bit EST00193 MR2A16A, MR2A16AMA35 6726 power transistor MR2A16ACMA35 MR2A16ATS35C

    MR2A16A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: MR2A16A Rev. 1, 5/2006 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The


    Original
    PDF MR2A16A 16-Bit 304-bit MR2A16A

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Advance Information MR2A16A/D Rev. 0.1, 7/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output


    Original
    PDF MR2A16A/D 16-Bit MR2A16A 304-bit MR2A16A/D

    MR2A16A

    Abstract: Everspin Technologies
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original
    PDF MR2A16A 20-years MR2A16A 304-bit Everspin Technologies

    Untitled

    Abstract: No abstract text available
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write cycle • SRAM compatible timing, uses existing SRAM controllers without redesign • Unlimited Read & Write endurance • Data non-volatile for >20 years at temperature • One memory replaces Flash, SRAM, EEPROM and


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    PDF MR2A16A AEC-Q100 44-pin 48-ball MR2A16A

    MRAM

    Abstract: BBSRAM MR2A16A honeywell memory sram
    Text: MRAM Fact Sheet Overview Freescale’s magnetoresistive random access memory MRAM is a revolutionary memory technology that can replace many of today’s semiconductor memory technologies. MRAM combines the speed of SRAM and the non-volatility of flash onto a single chip.


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    PDF

    ISP1362

    Abstract: SW710 philips MR2A16ATS mcf5233cvm Coldfire MCF5235 HALO N5 SMD fuse BA siemens c45 smd transistor h5c MCF5232CAB80
    Text: Freescale Semiconductor User’s Manual M5235EVBUM Rev. 2, 08/2007 M5235EVB User’s Manual by: Microcontroller Division 1 Preface EMC information: • This product, as shipped from the factory with associated power supplies and cables, has been tested and meets with requirements of EN5022


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    PDF M5235EVBUM M5235EVB EN5022 ISP1362 SW710 philips MR2A16ATS mcf5233cvm Coldfire MCF5235 HALO N5 SMD fuse BA siemens c45 smd transistor h5c MCF5232CAB80

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    SDHC PINOUT

    Abstract: SDHC socket PINOUT SDHC protocol elevator schematic SDHC schematic SDHC specification SDhc socket sdhc logic datasheet for elevator control circuit SDHC data sheet
    Text: TWR-MEM User’s Manual Rev. 1.2 Freescale Semiconductor Inc. Contents 1 Overview .4 2 Reference Documents .4


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    PDF

    gaussmeter

    Abstract: Tunneling Magnetoresistance MR2A16A
    Text: Technical Guide MRAM Overview Freescale’s magnetoresistive random access memory MRAM technology combines a magnetic device with standard silicon-based microelectronics to obtain the collective attributes of non-volatility, high-speed operation and unlimited read and write endurance, a


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    PDF MR2A16A gaussmeter Tunneling Magnetoresistance

    gaussmeter

    Abstract: magnetic field measuring magnetic flow meter Magnetic Field Sensor magnetic motors MR2A16A "helmholtz coil" relative magnet permeability
    Text: Introduction: This application note is designed to familiarize the reader with magnetic fields, the sources and magnitudes of magnetic fields and their impact on the performance of Freescale’s MRAM products. The note is organized as follows: 1 An overview of MRAM operation


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    PDF 402-R-92-008 gaussmeter magnetic field measuring magnetic flow meter Magnetic Field Sensor magnetic motors MR2A16A "helmholtz coil" relative magnet permeability

    LCD Iphone 3G

    Abstract: cd player amplifier double ic 4440 hynix lpddr2 Amphenol Connectors CATALOG iphone camera module Hynix Semiconductor lpddr2 samsung lpddr2 samsung* lpddr2 Rockchip lcd touchscreen iphone 3g
    Text: Industry News: Breaking News in the Industry and around the World MEMORY Interfaces WIRELESS COMMUNICATIONS: Ultra-wideband CONSUMER ELECTRONICS: HANDHELD GAMING DEVICES PORTABLE POWER: PARTITIONING for POWER Featured Product: Texas Instruments TMS320DM355


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    PDF TMS320DM355 LLP-16 LP5551 LLP-36 LP5552 SMD-36 LCD Iphone 3G cd player amplifier double ic 4440 hynix lpddr2 Amphenol Connectors CATALOG iphone camera module Hynix Semiconductor lpddr2 samsung lpddr2 samsung* lpddr2 Rockchip lcd touchscreen iphone 3g