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    MMBT2369 Price and Stock

    onsemi MMBT2369ALT1G

    TRANS NPN 15V 0.2A SOT23-3
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    DigiKey MMBT2369ALT1G Reel 24,000 3,000
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    onsemi SMMBT2369ALT1G

    TRANS NPN 15V 0.2A SOT23-3
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    DigiKey SMMBT2369ALT1G Digi-Reel 14,771 1
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    onsemi MMBT2369

    TRANS NPN 15V 0.2A SOT23-3
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    DigiKey MMBT2369 Digi-Reel 1
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    onsemi MMBT2369LT1G

    TRANS NPN 15V 0.2A SOT23-3
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    Rochester Electronics LLC MMBT2369LT1G

    TRANS NPN 15V 0.2A SOT23-3
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    MMBT2369 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT2369 Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR SWITCH NPN SOT23 Original PDF
    MMBT2369 Fairchild Semiconductor NPN High Speed Switsh Original PDF
    MMBT2369 Fairchild Semiconductor NPN Switching Transistor Original PDF
    MMBT2369 Galaxy Semi-Conductor Holdings NPN General Purpose Amplifier Original PDF
    MMBT2369 Sinyork Mini size of Discrete semiconductor elements Original PDF
    MMBT2369 Motorola European Master Selection Guide 1986 Scan PDF
    MMBT2369 Motorola NPN silicon switching transistor. Scan PDF
    MMBT2369 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MMBT2369 National Semiconductor NPN SWitching Transistors Scan PDF
    MMBT2369 National Semiconductor Surface Mount Transistors Scan PDF
    MMBT2369 National Semiconductor Sulface Mount Transistors Scan PDF
    MMBT2369A Fairchild Semiconductor NPN Switching Transistor Original PDF
    MMBT2369A Fairchild Semiconductor NPN Switching Transistor Original PDF
    MMBT2369A Galaxy Semi-Conductor Holdings NPN General Purpose Amplifier Original PDF
    MMBT2369A PanJit Semiconductors NPN GENERAL PURPOSE SWITCHING TRANSISTOR Original PDF
    MMBT2369A Fairchild Semiconductor NPN Switching Transistor Scan PDF
    MMBT2369A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MMBT2369A National Semiconductor NPN SWitching Transistors Scan PDF
    MMBT2369A National Semiconductor High Speed Saturated Switching Transistors Scan PDF
    MMBT2369A National Semiconductor Surface Mount Transistors Scan PDF

    MMBT2369 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot 23 marking code 1ja

    Abstract: No abstract text available
    Text: MMBT2369LT1G, MMBT2369LT1G, MMBT2369ALT1G, MMBT2369ALT1G Switching Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 CASE 318 STYLE 6


    Original
    PDF MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G AEC-Q101 OT-23 MMBT2369LT1/D sot 23 marking code 1ja

    PN2369

    Abstract: PN2369 EQUIVALENT HIGH SPEED SWITCHING NPN SOT23 FAIRCHILD SOT-23 MARK 30 MMBT2369
    Text: MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark: 1J Absolute Maximum Ratings * T a Symbol


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    PDF MMBT2369 PN2369 100mA. MMBT2369 OT-23 PN2369 PN2369 EQUIVALENT HIGH SPEED SWITCHING NPN SOT23 FAIRCHILD SOT-23 MARK 30

    MMBT2369LT1

    Abstract: MMBT2369ALT1 2N3227 1N916 2N2369 MMBT2369 MMBT2369A 2N2369 SOT-23
    Text: MOTOROLA Order this document by MMBT2369LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors MMBT2369LT1 MMBT2369ALT1* COLLECTOR 3 NPN Silicon 1 BASE *Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


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    PDF MMBT2369LT1/D MMBT2369LT1 MMBT2369ALT1* MMBT2369LT1/D* MMBT2369LT1 MMBT2369ALT1 2N3227 1N916 2N2369 MMBT2369 MMBT2369A 2N2369 SOT-23

    marking code m1j transistor

    Abstract: MMBT2369 marking 04 sot-23 marking M1j D marking amplifier marking code PC sot-23
    Text: BL Galaxy Electrical Production specification NPN General Purpose Amplifier MMBT2369 FEATURES Pb z Epitaxial planar die construction. z Ultra-small surface mount package. Lead-free APPLICATIONS z Use as a medium power amplifier. SOT-23 ORDERING INFORMATION


    Original
    PDF MMBT2369 OT-23 -55to BL/SSSTC114 marking code m1j transistor MMBT2369 marking 04 sot-23 marking M1j D marking amplifier marking code PC sot-23

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369 / MMBT2369A MMBT2369 / MMBT2369A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-06-02 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse


    Original
    PDF MMBT2369 MMBT2369A OT-23 O-236) UL94V-0 MMBT2369

    2N2369 SOT-23

    Abstract: MMBT2369LT1 2N3227 1N916 2N2369 MMBT2369 MMBT2369A MMBT2369ALT1
    Text: LESHAN RADIO COMPANY, LTD. Switching Transistors NPN Silicon 3 COLLECTOR MMBT2369LT1 MMBT2369ALT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector–Emitter Voltage V CEO 15 Vdc Collector–Emitter Voltage V CES 40 Vdc CASE 318–08, STYLE 6


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    PDF MMBT2369LT1 MMBT2369ALT1 236AB) 2N2369 SOT-23 MMBT2369LT1 2N3227 1N916 2N2369 MMBT2369 MMBT2369A MMBT2369ALT1

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.120 3.04 • Collector-emitter voltage V CE = 15V 0.110(2.80) • Collector current I C = 200mA • Lead free in comply with EU RoHS 2011/65/EU directives.


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    PDF MMBT2369A 200mA 2011/65/EU IEC61249 OT-23, MIL-STD-750,

    2N2369 SOT-23

    Abstract: marking code m1j transistor MMBT2369LT1 2N2369 2N3227 MMBT2369 MMBT2369A MMBT2369ALT1 MMBT2369ALT1G MMBT2369LT1G
    Text: MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 is a Preferred Device Switching Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Emitter Voltage


    Original
    PDF MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 OT-23 MMBT2369LT1/D 2N2369 SOT-23 marking code m1j transistor MMBT2369LT1 2N2369 2N3227 MMBT2369 MMBT2369A MMBT2369ALT1G MMBT2369LT1G

    MMBT2369

    Abstract: HIGH SPEED SWITCHING NPN SOT23
    Text: MMBT2369 MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. G S D SOT-23 Mark: 1J Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol


    Original
    PDF MMBT2369 100mA. OT-23 MMBT2369 HIGH SPEED SWITCHING NPN SOT23

    MMBT2369ALT1G

    Abstract: MMBT2369LT1G 1N916 MMBT2369 MMBT2369A
    Text: MMBT2369LT1G, MMBT2369ALT1G Switching Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15


    Original
    PDF MMBT2369LT1G, MMBT2369ALT1G MMBT2369LT1/D MMBT2369ALT1G MMBT2369LT1G 1N916 MMBT2369 MMBT2369A

    MMBT2369

    Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23
    Text: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol


    Original
    PDF MMBT2369 MMBT2369 100mA. OT-23 MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369LT1 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)225m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400n @V(CBO) (V) (Test Condition)20


    Original
    PDF MMBT2369LT1 Freq500M

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369L, MMBT2369AL Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    PDF MMBT2369L, MMBT2369AL MMBT2369LT1/D

    MMBT2369

    Abstract: No abstract text available
    Text: MMBT2369LT1G, MMBT2369LT1G, MMBT2369ALT1G, MMBT2369ALT1G Switching Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 CASE 318 STYLE 6


    Original
    PDF MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G MMBT2369LT1/D MMBT2369

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives


    Original
    PDF MMBT2369A 200mA 2002/95/EC OT-23, MIL-STD-750,

    2N2369 SOT-23

    Abstract: MMBT2369ALT1 1N916 2N2369 2N3227 MMBT2369 MMBT2369LT1
    Text: ON Semiconductort MMBT2369LT1 MMBT2369ALT1* Switching Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage


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    PDF MMBT2369LT1 MMBT2369ALT1* r14525 MMBT2369LT1/D 2N2369 SOT-23 MMBT2369ALT1 1N916 2N2369 2N3227 MMBT2369 MMBT2369LT1

    MMBT2369A

    Abstract: Transistor General Purpose Transistor FE SOT
    Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives


    Original
    PDF MMBT2369A 200mA 2002/95/EC OT-23, MIL-STD-750, MMBT2369A Transistor General Purpose Transistor FE SOT

    switching transistor 331

    Abstract: CBVK741B019 F63TNR MMBT2369A PN2222N PN2369A 1073 PN222N label
    Text: PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol


    Original
    PDF PN2369A MMBT2369A PN2369A OT-23 switching transistor 331 CBVK741B019 F63TNR MMBT2369A PN2222N 1073 PN222N label

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBT2369LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors MMBT2369LT1 MMBT2369ALT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


    Original
    PDF MMBT2369LT1/D MMBT2369LT1 MMBT2369ALT1* MMBT2369LT1/D*

    2N2369 SOT-23

    Abstract: MMBT2369LT1 2N3227 marking code m1j transistor 1N916 2N2369 MMBT2369 MMBT2369A MMBT2369ALT1 M1JX
    Text: MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 is a Preferred Device Switching Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage


    Original
    PDF MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 r14525 MMBT2369LT1/D 2N2369 SOT-23 MMBT2369LT1 2N3227 marking code m1j transistor 1N916 2N2369 MMBT2369 MMBT2369A M1JX

    Tf 227

    Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
    Text: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector


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    PDF PN2369A MMBT2369A MMPQ2369 OT-23 SOIC-16 bS01130 0040bc Tf 227 MMBT2369A MMPQ2369 PN2369A SOIC-16

    PN2369A

    Abstract: No abstract text available
    Text: S i M 1 C O N B U C T O P3 PN2369A MMBT2369A B / MMPQ2369 SOT-23 MMPQ2369 SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d fo r high s p e e d s a tu ra tio n sw itc h in g a t c o llec to r c u rre n ts of 1 0 m A to 1 0 0 m A . S o u rc e d from P ro c e s s 2 1 .


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    PDF PN2369A MMBT2369A PN2369A MMPQ2369 OT-23 SOIC-16

    TG 2309

    Abstract: MMBT2369LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MMBT2369LT1 MMBT2369ALT1* COLLECTOR NPN Silicon 'M o to ro la Preferred D evice BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value C ollector-E m itter Voltage v CEO 15 Vdc C ollector-E m itter Voltage


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    PDF MMBT2369LT1 MMBT2369ALT1* OT-23 O-236AB) MMBT2369ALT1 TG 2309

    PN2369A

    Abstract: MMBT2369A MMPQ2369 transistor GC cd rjr ce transistor
    Text: s s vis z;-c; molj z t o h PN2369A MMBT2369A MMPQ2369 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Màximum RdtinÇjS T A = 2 5 ° C u n le s s o th e r w is e n o te d


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    PDF PN2369A MMBT2369A MMPQ2369 MMPQ2369 transistor GC cd rjr ce transistor