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    MGF4941AL Price and Stock

    Mitsubishi Electric MGF4941AL

    SUPER LOW NOISE InGaAs HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics MGF4941AL 50,808
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    • 100 $0.5016
    • 1000 $0.3344
    • 10000 $0.3344
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    MGF4941AL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGF4941AL Mitsubishi SUPER LOW NOISE InGaAs HEMT Original PDF

    MGF4941AL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    top 261

    Abstract: GD-32 mgf4941al InGaAs HEMT mitsubishi
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz


    Original     		PDF 18/May/2007 MGF4941AL MGF4941AL 12GHz GD-32 4000pcs top 261 GD-32 InGaAs HEMT mitsubishi

    GD-32

    Abstract: mgf4941al fet K 727
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz


    Original     		PDF MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 fet K 727

    mgf4941al

    Abstract: nozzle heater Halide hot air gun 450 chip 1097E MGF4941
    Text: Technical Note for MGF4941AL 1. Recommended foot pattern 2.80 Unit : mm Tolerance : ±0.05 2.60 2.06 0.89 2.80 2.60 2.06 2.75 4.15 0.74 * 0.69 0.54 4-φ0.3T/H Point Circled numbers are very important length determining the accuracy of self alignment. Please don’t change these length as far as


    Original     		PDF MGF4941AL 50-ohm 254mm) QL-1097E mgf4941al nozzle heater Halide hot air gun 450 chip 1097E MGF4941

    MGF4941AL

    Abstract: MGF4941 GD-32
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 26/Dec./2006 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. ③ FEATURES Low noise figure


    Original     		PDF 26/Dec MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MGF4941 GD-32

    1 928 405 766

    Abstract: GD-32 rogers 4403
    Text: < Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.)


    Original     		PDF MGF4941AL MGF4941AL 12GHz 4000pcs 1 928 405 766 GD-32 rogers 4403

    mgf4941al

    Abstract: MITSUBISHI electric R22 GD-32
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 19/Jan./2007 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure


    Original     		PDF 19/Jan MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MITSUBISHI electric R22 GD-32

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original     		PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original     		PDF QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"