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    Toshiba America Electronic Components MG25Q6ES51

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    Bristol Electronics MG25Q6ES51 196 1
    • 1 $66
    • 10 $63.459
    • 100 $54.12
    • 1000 $54.12
    • 10000 $54.12
    		Buy Now
    Quest Components MG25Q6ES51 156
    • 1 $71.5
    • 10 $71.5
    • 100 $60.5
    • 1000 $57.75
    • 10000 $57.75
    		Buy Now

    Toshiba America Electronic Components MG25Q6ES50A

    SILICON N CHANNEL IGBT GTR MODULE Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MG25Q6ES50A 40
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    MG25Q6 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG25Q6ES1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG25Q6ES1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG25Q6ES42 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG25Q6ES42 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG25Q6ES50 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG25Q6ES50A Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG25Q6ES51 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG25Q6ES51 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG25Q6ES51A Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG25Q6ES51A Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF

    MG25Q6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    igbt 25A toshiba

    Abstract: MG25Q6ES42 Toshiba transistor Ic 100A
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.5µs Max. trr = 0.5µs (Max.)


    Original     		PDF MG25Q6ES42 PW03810796 igbt 25A toshiba MG25Q6ES42 Toshiba transistor Ic 100A

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE MG25Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG25Q6ES50A MG25Q ES50A 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage


    OCR Scan     		PDF MG25Q6ES42

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG25Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG25Q6ES51 961001EAA1

    MG25Q6ES42

    Abstract: No abstract text available
    Text: TOSHIBA MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		PDF MG25Q6ES42 961001EAA2 MG25Q6ES42

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE m . a^ ^7 ^r HIGH POWER SWITCHING APPLICATIONS nX SILICON N CHANNEL IGBT ES 50A MOTOR CONTROL APPLICATIONS • • • • • t High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG25Q6ES50A 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG25Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES51A HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG25Q6ES51A 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG25Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG25Q6ES50 961001EAA1 TjS125Â

    mg25q6es42

    Abstract: SO120200
    Text: TOSHIBA MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage


    OCR Scan     		PDF MG25Q6ES42 961001EAA2 mg25q6es42 SO120200

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode


    OCR Scan     		PDF MG25Q6ES42 15oVJ

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG25Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M fi^ n fiF ^ R n A • Mr lap ta «v v m ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.


    OCR Scan     		PDF MG25Q6ES50A 961001EAA1 TjS125Â

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG25Q6ES42 TOSHIBA GTR MODULE M fn ? ^ n SILICON N CHANNEL IGBT f iF c ;z i? Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode


    OCR Scan     		PDF MG25Q6ES42 51TEMPERATURE. Tjgl25

    MG25Q6ES51A

    Abstract: toshiba Igbts MG25Q6ES51
    Text: TOSHIBA MG25Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG25Q6ES51A MG25Q6ES51 2-108E2A 961001EAA1 MG25Q6ES51A toshiba Igbts

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG25Q6ES50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf = 0 .3 ^ 3 Max. Inductive Load • Low Saturation Voltage ; V CE (sat) = 3-OV (Max.)


    OCR Scan     		PDF MG25Q6ES50A 961001EAA1 --10V

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG25Q6ES51A TOSHIBA GTR MODULE • Mr SILICON N CHANNEL IGBT lar ta «v v ■ m a HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.


    OCR Scan     		PDF MG25Q6ES51A 961001EAA1

    MG25Q6ES50

    Abstract: No abstract text available
    Text: TOSHIBA MG25Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG25Q6ES50 2-108E1A 961001EAA1 VGE--10V 10//s MG25Q6ES50

    MG25Q6ES50A

    Abstract: P channel 1200v 25a IGBT
    Text: TOSHIBA MG25Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6 ES50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG25Q6ES50A 2-108E2A 961001EAA1 VGE--10V 10//s MG25Q6ES50A P channel 1200v 25a IGBT

    MG25Q6ES51

    Abstract: MG25Q6ES
    Text: TOSHIBA MG25Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG25Q6ES51 2-108E1A 961001eaa1 MG25Q6ES51 MG25Q6ES

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE MG25Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tj’=0.3/^s Max. @ Inductive Load Low Saturation Voltage : v CE(sat) = 3-o v (Max.)


    OCR Scan     		PDF MG25Q6ES50 9610Q1EAA1

    G25Q

    Abstract: No abstract text available
    Text: T O SH IB A M G25Q 6ES51 MG25Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF 6ES51 MG25Q6ES51 961001EAA1 G25Q

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG15J6ES40

    Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
    Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40


    OCR Scan     		PDF MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4