mcm511000aj70
Abstract: MCM511000AP70 MCM511000 MCM511000AP80 MCM511000A MCM511000A-70 MCM51L1000A MCM511000AJ80 MCM511 MCM511000AZ80
Text: MOTOROLA SC MEI10RY/ASIC SflE D fc>3b7251 IM0T3 r □ Ü f l 7 7 c14 1 T 3 riim a m Order thist rtA documemby MCM511000A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM511000A MCM51L1000A 1M x 1 CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range
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MEI10RY/ASIC
3b7251
fl77c
MCM511000A/D
MCM511000A
1ATX23025-3
mcm511000aj70
MCM511000AP70
MCM511000
MCM511000AP80
MCM511000A-70
MCM51L1000A
MCM511000AJ80
MCM511
MCM511000AZ80
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Untitled
Abstract: No abstract text available
Text: TE X A S IN ST R -CASIC/MEMORY} ^77 i>Ë| 6 ^ 1 7 2 5 D040774 77C 4 0 7 7 4 -§361725 TEXAS 1NSTR ASIC/MEMORY D TM4256EL9, TM4256GU9. TM4257EL9, TM4257GU9 262,144 BY 9-BIT DYNAMIC RAM MODULES SEPTEMBER 1986 - REVISED NOVEMBER 1985 T M 4 2 B .E L9 . . . L SINGLE-IN-UNE PACKAGE
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D040774
TM4256EL9,
TM4256GU9.
TM4257EL9,
TM4257GU9
30-Pin
24-PRD
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m5m27c100
Abstract: M5M27C100P
Text: b lE D bSMTflES 0 0 1 1 0 1 4 4S3 ♦ IMITI MITSUBISHI LSIs M5M27C100P, FP, J, VP, RV 1 0 4 8 5 7 6 -B IT 1 3 1 0 7 2 - WORD B Y 8-BIT CMOS ONE TIM E PROGRAMMABLE ROM MITSUBISHI (M E M O R Y / A S I C ) DESCRIPTION The Mitsubishi M5M27C100P, FP, J , VP, RV are high-speed
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M5M27C100P,
1048576-bit
m5m27c100
M5M27C100P
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ulw diode
Abstract: No abstract text available
Text: TEXAS INSTR -CASIC/MEUORYJ ?7 dË | 8961725 TEXAS INSTR <ASIC/MEMORY 0 ^ 1 7 5 5 00M0fl71 77C 40871 D TM4416KU8 16,384 BY 8-BIT DYNAMIC RAM MODULE ADVANCE INFORMATION SEPTEMBER 1985 - REVISED NOVEMBER 1985 U SINGLE-M-UNE PACKAGE TOP VIEW ) 16,384 X 8 Organization
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00M0fl71
TM4416KU8
30-Pin
ulw diode
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Untitled
Abstract: No abstract text available
Text: 6^1725 SN54ALS229A, SN74ALS229A 1 6 X 5 ASYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES TEXAS INSTR A S I C / flEM0 R Y 2SE D SN54ALS229A . . . J PACKAGE SN74ALS229A . . . DW OR N PACKAGE muapenae.ni Asychronous Inputs and Outputs I D2876 , MARCH 1986 —REVISED MAY 1986
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SN54ALS229A,
SN74ALS229A
SN54ALS229A
D2876
15HQ1
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27C512JL
Abstract: 1985-REVISED TMS27C512 27pc512 Texas Instruments TTL 1985 TMS27PC512 -12nt 512K x 8 High Performance CMOS EPROM TMS27PC512 lt 637 CODE ZA10
Text: TMS27C512 524 288-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC512 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY • T II5 S M LS 512E-N O VE M B ER 19 8 5 -R E V IS E D DECEM BER 1992 This Data Sheet is Applicable to All TMS27C512S and TMS27PC512s Symbolized with Code “B" as Described
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TMS27C512
288-BIT
TMS27PC512
SMLS512E-NOVEMBER
1985-REVISED
TMS27C512S
TMS27PC512s
27C/PC512-10
27C/PC512-12
27C512JL
27pc512
Texas Instruments TTL 1985
TMS27PC512 -12nt
512K x 8 High Performance CMOS EPROM
lt 637
CODE ZA10
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27C510
Abstract: pc51020 27C510-12 27C510-15 PC510-20 LA5524 memory device programers
Text: SMLS510A-AUGUST1990-REVISED JANUARY 1993 J AND N PACKAGESÎ {TOP VIEW Organization . . . 64K x 8 Single 5-V Power Supply 30 ] NC A 12[ 4 29 ] A14 A 7[ 5 28 ] A13 A 6f 6 27 ] A 8 A 5f 7 26 ] A9 A 4[ 8 25 ] A11 A 3f 9 A 2[ 10 24 ] G A 1 [ 11 AOf 12 22 ] È
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TMS27C510
288-BIT
TMS27PC510
SMLS510A-AUGUST1990-REVISED
27C510-12
27C/PC510-15
27C/PC510-17
27C/PC510-20
27C/PC510-25
27C510
pc51020
27C510-12
27C510-15
PC510-20
LA5524
memory device programers
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E415
Abstract: 266K b236 tms4256fml
Text: T E X A S IN ST R Ì A S I C / M E M O R Y > 77 flìblTHS OOMDfib? -ggg^T^S- TEXAS TNSTR T Â S TCTMÊMORVT ADVANCE INFORMATION 77C 4 0867 D TM4256HE4 524,288 BY 4BIT DYNAMIC RAM MODULE SEPTEMBER 1986 - REVISED NOVEMBER 1986- E SINGLE-IN-UNE P A C K A G E *
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TM4256HE4
24-Pin
-CASIC/MEI10RY}
b-236
E415
266K
b236
tms4256fml
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61C64
Abstract: No abstract text available
Text: TEXAS INSTR {A SI C/M EMORY} 2SE » • 0^1725 G07ÛQQT b ■ MPR61C64, MPR61CT64 65,536-WORD BY 1-BIT RADIATION-HARDENED STATIC RAMs D 3 3 6 4 , NOVEMBER 1 9 8 9 24-PIN PACKAGE 6 5 ,5 3 6 x 1 Organization • Silicon-on-lnsulator SIMOX for Extreme Radiation Environments:
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MPR61C64,
MPR61CT64
536-WORD
24-pin
Chip36-WORD
65S303
61C64
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27C512-25
Abstract: SMJ27C512 eprom 27C512 27C512-20 27C512-30
Text: • iL.SE bdL D ■ Tl x a s fl^blTES DDÖIETS 3 ö l I■ T I I 5 SMJ27C512 524 288-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY I NSTR ASIC/MEMORY ■ I * Military Operating Temperature Range . . . - 55°C to 125°C 1 * Processed to MIL-STD-883C, Class B
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288-BIT
SMJ27C512
SGMSQ19Bâ
1987-REVISED
MIL-STD-883C,
27C512-20
27C512-25
27C512-30
400-mV
SMJ27C512
eprom 27C512
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27C040-12
Abstract: 27C040-10 27c040-15 SMJ27C040
Text: b2 E T> • ö lb lT aS TEXAS INSTR SMJ27C040 4 194 304-BIT UV ERASABLE CASI C/ MEMORY Ì PROGRAMMABLE READ-ONLY MEMORY GD613D? *1B3 I■ T I I S S G M S 0 4 6-N O V E M B E R 1992 J PACKAGEt Military Operating Temperature Range —55°C to 125°C TOP VIEW
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B1bl72S
GD613D?
SMJ27C040
304-BIT
SGMS046-NOVEMBER
32-Pin
27C040-10
27C040-12
27C040-15
400-mV
27C040-12
27C040-10
27c040-15
SMJ27C040
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TM497BBK32S
Abstract: TM893CBK32 TM893CBK32S TM497BBK32 128m simm 72 pin K3270
Text: bZE D • f l ^ b l 7 2 S □DfiDâk.3 LE? B T I I S TM497BBK32, TM497BBK32S 4194 304 BY 32-BIT DYNAMIC RAM MODULE TM893CBK32, TM893CBK32S 8 388 608 BY 32-BIT DYNAMIC RAM MODULE INSTR ASIC/M EM O RY Organization TM497BBK32 . . . 4 194 304 x 32 TM893CBK32 . . . 8 388 608 x 32
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TM497BBK32,
TM497BBK32S
32-BIT
TM893CBK32,
TM893CBK32S
497BBK32-60
497BBK32-70
497BBK32-80
893CBK32-60
TM893CBK32
TM497BBK32
128m simm 72 pin
K3270
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3JDQ10
Abstract: mitsubishi A
Text: bl E D bSM'iflSS QD17fi3b 5 m •MITI MITSUBISHI LSIs ‘ I t ' M5M4V181600AJ,TP,RT-6,-7,-8 FAST PAGE MODE 16777216-BIT 1048576-WORD BY 16-BIT DYNAMIC RAM MITSUBISHI (MEMORY/ASIC) PIN CONFIGURATION (TO P VIEW ) DESCRIPTION This is a fam ily o f 1048576-word by 16-bit dynam ic
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QD17fi3b
M5M4V181600AJ
16777216-BIT
1048576-WORD
16-BIT
16-bit
b24Tfl2S
3JDQ10
mitsubishi A
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mtbf intel
Abstract: 28F008SA intel PLD 29042 UG773
Text: ADVANCE INFORMATION i n U CORP MEMORY/PLD/ SbE D • 4ûEbl7b Q 07 732 2 O IT B I T L E 28F008SA-L 8 MBIT (1 MBIT x 8 FLASHFILE MEMORY High-Density Symm etrically Blocked Architecture — Sixteen 64 KByte Blocks Low-Voltage Operation — 3.3V ± 0.3V or 5.0V ± 10% V cc
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00773SB
28F008SA-L
40-LL2
E28F008SA-L200
F28F008SA-L200
PA28F008SA-L200
E28F008SA-L250
F28F008SA-L250
PA28F008SA-L250
28F008SA
mtbf intel
intel PLD
29042
UG773
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Untitled
Abstract: No abstract text available
Text: SN74ALS632B, SN74AS632 32 BIT PARALLEL ERROR DETECTION AND CORRECTION CIRCUITS D 3 3 9 6 , JA N U A R Y 1 9 8 6 -R E V IS E D JA N U A R Y 1 990 I • Detects and Corrects Single-Bit Errors I • Detects and Flags Dual-Bit Errors I • Built-In Diagnostic Capability
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SN74ALS632B,
SN74AS632
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Intel 1103 DRAM
Abstract: 16bit isa pcmcia TPE TES A 210 E 82595 LSE B3 transformer how to test 8023 dram cont ic A82595 transformer PLT ISA Design PCMCIA Design
Text: INTEL CORP MEinORY/PLD/ bêE D • MflEblVb □Gfl4GlH in t e l 82595 ISA/PCM CIA HIGH INTEGRATION ETHERNET CONTROLLER Optimal Integration for Lowest Cost Solution — Glueless 8-Bit/16-Bit ISA/PCMCIA 2.0 Bus Interface — Provides Fully 802.3 Compliant AUI
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8-Bit/16-Bit
16-Bit
IOCS16#
IOIS16#
Intel 1103 DRAM
16bit isa pcmcia
TPE TES A 210 E
82595
LSE B3 transformer how to test
8023 dram cont ic
A82595
transformer PLT
ISA Design
PCMCIA Design
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