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    MBRS330T3 Price and Stock

    onsemi MBRS330T3G

    DIODE SCHOTTKY 30V 3A SMC
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    DigiKey MBRS330T3G Reel 10,000 2,500
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    Avnet Americas MBRS330T3G Reel 5,000 8 Weeks 2,500
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    MBRS330T3G Ammo Pack 14 Weeks, 4 Days 1
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    Mouser Electronics MBRS330T3G 76,671
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    Verical MBRS330T3G 7,500 2,500
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    MBRS330T3G 5,000 2,500
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    MBRS330T3G 2,584 35
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    Arrow Electronics MBRS330T3G 7,500 8 Weeks 2,500
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    MBRS330T3G 5,000 8 Weeks 2,500
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    MBRS330T3G Cut Strips 2,584 8 Weeks 1
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    Newark MBRS330T3G Cut Tape 8,784 1
    • 1 $0.658
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    MBRS330T3G Cut Tape 7,470 1
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    MBRS330T3G Reel 2,500
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    Onlinecomponents.com MBRS330T3G
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    Bristol Electronics MBRS330T3G 3,759
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    MBRS330T3G 655 11
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    Quest Components MBRS330T3G 1,535
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    MBRS330T3G 524
    • 1 $0.65
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    MBRS330T3G 32
    • 1 $0.595
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    ComSIT USA MBRS330T3G 6,547
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    Richardson RFPD MBRS330T3G 5,000
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    Avnet Asia MBRS330T3G 8 Weeks 7,500
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    Win Source Electronics MBRS330T3G 30,122
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    onsemi MBRS330T3

    DIODE SCHOTTKY 30V 4A SMC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBRS330T3 Cut Tape 1
    • 1 $1.37
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    MBRS330T3 Reel 2,500
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    Bristol Electronics MBRS330T3 7,315 9
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    MBRS330T3 6,738
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    Quest Components MBRS330T3 19,272
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    MBRS330T3 5,852
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    MBRS330T3 4,978
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    MBRS330T3 8
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    MBRS330T3 5
    • 1 $0.8484
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    Rochester Electronics MBRS330T3 15 1
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    Ameya Holding Limited MBRS330T3 1,195
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    Win Source Electronics MBRS330T3 27,300
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    onsemi MBRS330T3G.

    Schottky Diode, Full Reel; Repetitive Peak Reverse Voltage:30V; Average Forward Current:3A; Diode Configuration:Single; Diode Case Style:Do-214Ab (Smc); No. Of Pins:2Pins; Forward Voltage Max:500Mv; Forward Surge Current:80A Rohs Compliant: Yes |Onsemi MBRS330T3G.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MBRS330T3G. Reel 2,500
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    Motorola Semiconductor Products MBRS330T3

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    Bristol Electronics MBRS330T3 2,191
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    Quest Components MBRS330T3 2,000
    • 1 $1.414
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    MBRS330T3 751
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    MBRS330T3 60
    • 1 $0.75
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    • 1000 $0.375
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    Motorola Mobility LLC MBRS330T3

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    Bristol Electronics MBRS330T3 76 9
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    MBRS330T3 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRS330T3 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    MBRS330T3 National Semiconductor N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages Original PDF
    MBRS330T3 On Semiconductor SCHOTTKY BARRIER RECTIFIERS Original PDF
    MBRS330T3 Microsemi Schottky Rectifier Scan PDF
    MBRS330T3G On Semiconductor 3A 30V Schottky Rectifier Original PDF
    MBRS330T3G On Semiconductor 3A 30V Schottky Rectifier; Package: SMC; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 Original PDF

    MBRS330T3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking code onsemi Diode B34

    Abstract: b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34
    Text: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRS320T3, MBRS330T3, MBRS340T3 MBRS340T3/D marking code onsemi Diode B34 b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34 PDF

    MBRS340T3G

    Abstract: MBRS340T3G marking MBRS330T3G MBRS320T3 MBRS320T3G MBRS330T3 MBRS340T3 iso 7637 pulse 5
    Text: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRS320T3, MBRS330T3, MBRS340T3 MBRS340T3/D MBRS340T3G MBRS340T3G marking MBRS330T3G MBRS320T3 MBRS320T3G MBRS330T3 MBRS340T3 iso 7637 pulse 5 PDF

    MBRS340T3G

    Abstract: MBRS340T3G marking MBRS320T3G 5M MARKING CODE DIODE SMC MBRS320T3 MBRS330T3 MBRS330T3G MBRS340T3 case 403 SMC 403-03
    Text: MBRS320T3, MBRS330T3, MBRS340T3 Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS320T3, MBRS330T3, MBRS340T3 MBRS340T3/D MBRS340T3G MBRS340T3G marking MBRS320T3G 5M MARKING CODE DIODE SMC MBRS320T3 MBRS330T3 MBRS330T3G MBRS340T3 case 403 SMC 403-03 PDF

    marking B32 diode SCHOTTKY

    Abstract: marking B34 diode SCHOTTKY MBRS340T3G b34 diodes on semiconductor marking B33 diode b34 DIODE schottky marking B3X Diode 145 B34 marking B32
    Text: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS320T3, MBRS330T3, MBRS340T3 marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY MBRS340T3G b34 diodes on semiconductor marking B33 diode b34 DIODE schottky marking B3X Diode 145 B34 marking B32 PDF

    mbrs340t3g

    Abstract: MBRS330T3G MBRS320T3G SMC 403-03 MBRS320T3 MBRS330T3 MBRS340T3
    Text: MBRS320T3, MBRS330T3, MBRS340T3 Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRS320T3, MBRS330T3, MBRS340T3 MBRS340T3/D mbrs340t3g MBRS330T3G MBRS320T3G SMC 403-03 MBRS320T3 MBRS330T3 MBRS340T3 PDF

    DIODE ON SEMICONDUCTOR B34

    Abstract: marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B3X b34 DIODE schottky b34 diodes on semiconductor MARKING B33 SMC 5M MARKING CODE DIODE SMC marking code onsemi Diode B34 marking B32
    Text: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 r14525 MBRS340T3/D DIODE ON SEMICONDUCTOR B34 marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B3X b34 DIODE schottky b34 diodes on semiconductor MARKING B33 SMC 5M MARKING CODE DIODE SMC marking code onsemi Diode B34 marking B32 PDF

    MBRS340T3G

    Abstract: NRVBS330T3G MBRS340T3G POLARITY ON PART MBRS340T3G marking
    Text: MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G MBRS340T3/D MBRS340T3G NRVBS330T3G MBRS340T3G POLARITY ON PART MBRS340T3G marking PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G MBRS340T3/D PDF

    MBRS340T3G

    Abstract: MBRS340T3G marking SBRS8320T3G SBRS8340T3G MBRS330T3G diode code b3x
    Text: MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G MBRS340T3/D MBRS340T3G MBRS340T3G marking SBRS8320T3G MBRS330T3G diode code b3x PDF

    marking B32 diode SCHOTTKY

    Abstract: marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x
    Text: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x PDF

    BAT85 equivalent

    Abstract: 10bit DAC 10V output CTX02 LT1374-SYNC if transformer 455khz matsushita 455KHz ceramic filter 1N914 LT1374 LT1534 LTC1393
    Text: LinearTechnologyChronicle A Showcase of Linear Technology’s Focus Products May 1998 100 Product of the Month C2 0.27µF L1* 5µH BOOST C3* 10µF TO 50µF + OUTPUT* 5V, 4.25A VSW VIN LT1374-SYNC BIAS R1 5.36k FB GND VC CC 1.5nF D2 MBRS330T3 + R2 4.99k * RIPPLE CURRENT RATING ≥ IOUT/2


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    LT1374-SYNC MBRS330T3 LT1374-SYNC LTC1660: 10-Bit LT1534: LT1534 16-lead 1-800-4-LINEAR BAT85 equivalent 10bit DAC 10V output CTX02 if transformer 455khz matsushita 455KHz ceramic filter 1N914 LT1374 LTC1393 PDF

    MBRS320T3 MBRS330T3 MBRS340T3

    Abstract: marking B34 diode SCHOTTKY b34 DIODE schottky MBRS340T3G diode marking b34 3B8000 DIODE ON SEMICONDUCTOR B34 marking B3X MBRS340T3G marking MBRS320T3G
    Text: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS320T3, MBRS330T3, MBRS340T3 MBRS340T3/D MBRS320T3 MBRS330T3 MBRS340T3 marking B34 diode SCHOTTKY b34 DIODE schottky MBRS340T3G diode marking b34 3B8000 DIODE ON SEMICONDUCTOR B34 marking B3X MBRS340T3G marking MBRS320T3G PDF

    MBRS340T3

    Abstract: MBRS330T3
    Text: MBRS330T3, MBRS340T3 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS PRV : 30 - 40 Volts IO : 3.0 Amperes SMC DO-214AB 0.060(1.52) 0.260(6.60) Very Low Forward Voltage Drop Small Compact Surface Mountable Package Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche


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    MBRS330T3, MBRS340T3 DO-214AB) UL94V-O MBRS340T3 MBRS330T3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRS330T3 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current4 @Temp (øC) (Test Condition)90Ô V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.80 V(FM) Max.(V) Forward Voltage500m @I(FM) (A) (Test Condition)3


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    MBRS330T3 Voltage30 Voltage500m Current20 StyleDO-214 PDF

    TPS54283

    Abstract: TPS54283PWP TPS54283PWPR TPS54286 TPS54286PWP TPS54286PWPR
    Text: TPS54283, TPS54286 www.ti.com SLUS749C – JULY 2007 – REVISED OCTOBER 2007 2-A DUAL NON-SYNCHRONOUS CONVERTER WITH INTEGRATED HIGH-SIDE MOSFET FEATURES CONTENTS 1 • 4.5-V to 28-V Input Range • Output Voltage Range 0.8 V to 90% of Input Voltage • Output Current Up to 2 A


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    TPS54283, TPS54286 SLUS749C TPS54283: TPS54286: 100-m TPS54283 TPS54283PWP TPS54283PWPR TPS54286 TPS54286PWP TPS54286PWPR PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS40200 www.ti.com SLUS659F – FEBRUARY 2006 – REVISED MARCH 2012 WIDE INPUT RANGE NON-SYNCHRONOUS VOLTAGE MODE CONTROLLER Check for Samples: TPS40200 FEATURES 1 • • • • • • • • • • • • Input Voltage Range 4.5 V to 52 V Output Voltage 700 mV to 90% VIN


    Original
    TPS40200 SLUS659F TPS40200 200-mA PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original
    SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    TPS40200

    Abstract: TPS40200D TPS40200DR TPS40200DRBR TPS40200DRBT transistor 206 tsp40200 700VDD
    Text: TPS40200 www.ti.com . SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 WIDE INPUT RANGE NON-SYNCHRONOUS VOLTAGE MODE CONTROLLER


    Original
    TPS40200 SLUS659D TPS40200 TPS40200D TPS40200DR TPS40200DRBR TPS40200DRBT transistor 206 tsp40200 700VDD PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS54283, TPS54286 www.ti.com SLUS749C – JULY 2007 – REVISED OCTOBER 2007 2-A DUAL NON-SYNCHRONOUS CONVERTER WITH INTEGRATED HIGH-SIDE MOSFET FEATURES CONTENTS 1 • 4.5-V to 28-V Input Range • Output Voltage Range 0.8 V to 90% of Input Voltage • Output Current Up to 2 A


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    TPS54283, TPS54286 SLUS749C TPS54283: TPS54286: 100-m PDF

    TP10

    Abstract: TPS54383 AC double voltmeter -AE make ti lable information panasonic lable information tp10 tp9 tp8 tp7 tp6 tp5 tp4 tp3 jp1
    Text: Using the TPS54383EVM User's Guide January 2008 Power Supply MAN SLUU285C Using the TPS54383EVM User's Guide Literature Number: SLUU285C July 2007 – Revised January 2008 User's Guide SLUU285C – July 2007 – Revised January 2008 A 12-V Input, 5.0-V and 3.3-V Output, 2-A


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    TPS54383EVM SLUU285C TPS54383EVM TPS54383 TPS5438ontrollers TP10 AC double voltmeter -AE make ti lable information panasonic lable information tp10 tp9 tp8 tp7 tp6 tp5 tp4 tp3 jp1 PDF

    LT1624

    Abstract: LT1628 lt1775 lt1625 1N914 LT1506 LT1959 LT1959C LT1959CR LT1959I
    Text: LT1959 4.5A, 500kHz Step-Down Switching Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1959 is a 500kHz monolithic buck mode switching regulator functionally identical to the LT1506 but optimized for lower output voltage applications. It will operate down


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    LT1959 500kHz LT1506 LT1506. LT1625 LT1628 LTC1735 LT1775 LT1624 LT1628 lt1775 lt1625 1N914 LT1959 LT1959C LT1959CR LT1959I PDF

    LTC3832

    Abstract: MBR330T3 LTC3832-1 LTC3832EGN MBR0520T1 Si9426DY SSOP-16 EEFUEOD271R sn3832 sanyo mv-wx Series
    Text: LTC3832/LTC3832-1 High Power Step-Down Synchronous DC/DC Controllers for Low Voltage Operation U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 3832/LTC3832-1 are high power, high efficiency switching regulator controllers optimized for


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    LTC3832/LTC3832-1 3832/LTC3832-1 LTC3832/LTC3832-1 LTC3713 LTC3831 sn3832 3832fs LTC3832 MBR330T3 LTC3832-1 LTC3832EGN MBR0520T1 Si9426DY SSOP-16 EEFUEOD271R sanyo mv-wx Series PDF

    DIODE MOTOROLA B34

    Abstract: DIODE MOTOROLA B33 diode schottky B34 1S91
    Text: Order this data shwrt by MBRS320T3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBRS320T3 MBRS330T3 MBRS340T3 Su rface M o u n t Sc h o ttk y Pow er Rectifiers . em ploying the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


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    MBRS320T3/D 86036EUROPE: MSRS320T3/0 DIODE MOTOROLA B34 DIODE MOTOROLA B33 diode schottky B34 1S91 PDF