IC 8088
Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500
Text: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well
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ML4T645-S-512
ML4T645
IC 8088
MA4T64535
"Semiconductor Master"
thurlby power supply
MA4T645
micro X
ODS-512
MA4T64500
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mount chip transistor 332
Abstract: SOT-23 TRANSISTOR 548 MA4T64500
Text: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series Silicon Bipolar High fT Low Noise Microwave Transistors Features • • • • • • • Case Style fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available
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MA4T645
mount chip transistor 332
SOT-23 TRANSISTOR 548
MA4T64500
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MA4T64500
Abstract: 4558 MA4T64535 557 sot143 micro X
Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV
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4T64500
MA4T64533
MA4T64535
OT-23
MA4T64539
OT-143
MA4T645XX
OT-143)
MA4T64500
4558
MA4T64535
557 sot143
micro X
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MA4T64500
Abstract: No abstract text available
Text: M an A M P com pany Silicon Bipolar High fT Low Noise Microwave Transistors MA4T645 V3.00 Case Styles Features • • • • • • fT to 9 GHz Low Noise Figure High A ssociated Gain Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels
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MA4T645
MA4T645
MA4T64539
OT-143
MA4T64500
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sot23 a4p
Abstract: transistorS 812 JANTX2N2857 7104F MA4P275S ma4cp104A ODS-1091 MA4CP101B MA4E2503L MA4CS102B
Text: SMQ High Volume Standard PIN Switching Diodes Model Num ber Case S tyle M A4P1250 M A4P1450 1072 1091 V oltage Rating Volts lR = 10 h A 50 50 M axim um C apacitance (PF) 1 = 1 MHz VR = 50 V 1.2 2.5 M inim um C a rrier Lifetim e <^s) M axim um R e sistance
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A4P1250
A4P1450
MA4P4001
A4P4002F
A4P4006F
A4P4301F
A4P4302F
A4P4306F
7001F
A4P7002F
sot23 a4p
transistorS 812
JANTX2N2857
7104F
MA4P275S
ma4cp104A
ODS-1091
MA4CP101B
MA4E2503L
MA4CS102B
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MA40285
Abstract: ma4882 MA40150 MA46H201 masw2070g1 MA46H206 MA47203 JANTX2N2857 MA4P9 MA40420
Text: MODEL NUMBER INDEX MODEL NUMBER PAGE 1N5165 .238 1N5166 .238 1N5167 .238 1N5712 .238 1N5713 . 238
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1N5165
1N5166
1N5167
1N5712
1N5713
1N5767
2N2857
2N3570
2N3571
2N3572
MA40285
ma4882
MA40150
MA46H201
masw2070g1
MA46H206
MA47203
JANTX2N2857
MA4P9
MA40420
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nd 16 TRANSISTOR SOT-23
Abstract: TRANSISTOR b 772 p sot-23 rks MA4T645 transistor TE 901 equivalent SOT-143 717 mount chip transistor 332 RKS SOT23 MA4T64500 MA4T64539
Text: MA4T645 Series M/A-COM Silicon Bipolar High fT Low Noise Microwave Transistors M crow ave Products Case Style Features • • • • • • • A MI RÂF & C G M fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available
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MA4T645
OT-23
OT-143
MA41344)
nd 16 TRANSISTOR SOT-23
TRANSISTOR b 772 p
sot-23 rks
transistor TE 901 equivalent
SOT-143 717
mount chip transistor 332
RKS SOT23
MA4T64500
MA4T64539
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transistor L44
Abstract: MA4T64535
Text: Afa Preliminary Specification an A M P c o m p a n y High Reliability Semiconductor Silicon Bipolar Low Noise Transistor ML4T645-S-512 V1.00 ODS 512 Outline Features • • • • fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation
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OCR Scan
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PDF
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ML4T645-S-512
ML4T645
transistor L44
MA4T64535
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transistor L44
Abstract: L44 TRANSISTOR MA4T645
Text: Preliminary Specification M an A M P com pany High Reliability Semiconductor Silicon Bipolar Low Noise Transistor Features • • • • ML4T645-S-512 ODS 512 Outline fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified
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OCR Scan
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ML4T645-S-512
ML4T645
transistor L44
L44 TRANSISTOR
MA4T645
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