MA3XD11
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 1 A rectification is possible
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Abstract: No abstract text available
Text: Composite Transistors XN09D57 Silicon PNP epitaxial planar type Tr Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 1 2 • Basic Part Number • XN09D57 + MA3XD11 Display at No.1 lead 10° SBD Symbol Rating
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XN09D57
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MA3XD11
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 5˚ ue pl d in
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MA3XD11
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD11 Silicon epitaxial planar type Unit : mm For high-frequency rectification + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1.5 − 0.05 1.45 0.95 1 0.95 3 + 0.1 + 0.2 2.9 − 0.05 • Sealed in the Mini type 3-pin package • Allowing to rectify under (IF(AV) = 1 A) condition
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95) di p Pl lan nclu
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MA3XD11
Abstract: No abstract text available
Text: Diodes SMD Type Schottky Barrier Diodes MA3XD11 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage VF 0.55 IF AV = 1 A rectification is possible 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1
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MA3XD11
OT-23
MA3XD11
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • Basic Part Number • XN9D57 + MA3XD11
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Rating Unit VR 20 V VRRM 25 V IF(AV) 1 A IFSM 3
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MA3XD11
SC-59
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MA3XD11
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.2 2.90+0.20 –0.05 VR 20 V Repetitive peak reverse-voltage
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SC-59
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MA3XD11
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou Fo an po du fo
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MA3XD11
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MA3XD11
Abstract: XN09D57
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • Basic Part Number • XN9D57 + MA3XD11
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XN09D57
XN9D57
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Unit VR 20 V VRRM 25 V IF(AV) 1 A IFSM 3 A Junction temperature
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MA3XD11
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD11 Silicon epitaxial planar type Unit : mm For high-frequency rectification + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1.5 − 0.05 1.45 0.95 1 0.95 3 + 0.1 + 0.2 2.9 − 0.05 • Sealed in the Mini type 3-pin package • Allowing to rectify under (IF(AV) = 1 A) condition
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MA3XD11
Abstract: XN09D57
Text: Composite Transistors XN09D57 Silicon PNP epitaxial planar type Tr Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • Basic Part Number • XN9D57 + MA3XD11 1 2 SBD 1.1+0.2 –0.1 Symbol Rating Unit Collector-base voltage
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Abstract: No abstract text available
Text: Product specification MA3XD11 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage VF 0.55 IF AV = 1 A rectification is possible 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
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OT-23
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Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 1 A rectification is possible
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SC-59
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MA3XD11
Abstract: XN09D57
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 For DC-DC converter M Di ain sc te on na tin nc ue e/ d • XN9D57 + MA3XD11
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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MA7D52
Abstract: No abstract text available
Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)
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MA2C700
MA2C700A
MA2C719
MA2C723
MA2D749
MA2D749A
MA2D750
MA2D755
MA2D760
MA2H735
MA7D52
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 0.30+0.10
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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FS Oncore
Abstract: MG4100 CTS 197-421 FS Oncore GPS motorola GPS receiver module AN2671 ST MAX3232 c9012 32KHZ C90-12
Text: Freescale Semiconductor, Inc. Application Note AN2671/D Rev. 0, 01/2004 FS Oncore Schematics Technology OVERVIEW Freescale Semiconductor, Inc. Whether your product is in the design phase or is even an existing platform – the FS Oncore module can be added easily in an extremely small space
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AN2671/D
MG4100
FS Oncore
CTS 197-421
FS Oncore GPS
motorola GPS receiver module
AN2671
ST MAX3232
c9012
32KHZ
C90-12
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