MA2X329
Abstract: MA329
Text: Variable Capacitance Diodes MA2X329 MA329 Silicon epitaxial planar type Unit : mm For VHF electronic tuners 0.16+0.10 –0.03 0.55±0.1 2 (0.3) 1 1.6+0.2 –0.1 • Absolute Maximum Ratings Ta = 25°C Rating Unit Reverse voltage (DC) VR 32 V Peak reverse voltage
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MA2X329
MA329)
MA2X329
MA329
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dm7493
Abstract: MAX328EWE T MAX329EWE MAX328 MAX328CJE MAX328CPE MAX328CWE MAX329 max3282
Text: 19-1006; Rev 3; 2/11 Ultra-Low Leakage Monolithic CMOS Analog Multiplexers The MAX328/MA329 are monolithic CMOS analog multiplexers. The MAX328 is a single-ended, 1-of-8 device, and the MAX329 is a differential, 2-of-8 device. Designed to provide the lowest possible on- and offleakages, these multiplexers switch signals from high
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MAX328/MA329
MAX328
MAX329
MAX328/MAX329
DG508/DG509
dm7493
MAX328EWE T
MAX329EWE
MAX328CJE
MAX328CPE
MAX328CWE
max3282
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MARKING 6B diode
Abstract: MA329 310 variable capacitance diode
Text: MA111 Variable Capacitance Diodes MA329 Silicon epitaxial planer type Unit : mm INDICATES CATHODE For VHF tuner ● Large capacity variation ratio ● Small series resistance rD ● Mini package, enabling down-sizing of the equipment and automatic 2 0.55±0.1
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MA111
MA329
MARKING 6B diode
MA329
310 variable capacitance diode
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Untitled
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2X329 MA329 Silicon epitaxial planar type Unit : mm For VHF electronic tuners 0.16+0.10 –0.03 0.55±0.1 2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo
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MA2X329
MA329)
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MA2X329
Abstract: MA329
Text: Variable Capacitance Diodes MA2X329 MA329 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 1 1.6 − 0.1 • Features 2 • Large capacitance ratio • Small series resistance rD • Mini type package, allowing downsizing of equipment and
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MA2X329
MA329)
MA2X329
MA329
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Untitled
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2X329 MA329 Silicon epitaxial planar type Unit : mm For VHF electronic tuners 0.16+0.10 –0.03 0.55±0.1 2 (0.3) 1 1.6+0.2 –0.1 • Absolute Maximum Ratings Ta = 25°C Forward current (DC) Junction temperature Storage temperature
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MA2X329
MA329)
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MA2X329
Abstract: MA329
Text: Variable Capacitance Diodes MA2X329 MA329 Silicon epitaxial planar type Unit : mm For VHF electronic tuners 0.16+0.10 –0.03 0.55±0.1 M Di ain sc te on na tin nc ue e/ d 2 Rating Unit Reverse voltage (DC) VR 32 V Peak reverse voltage VRM 34 V Forward current (DC)
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MA2X329
MA329)
MA2X329
MA329
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MAX328CWE
Abstract: MAX328 MAX328CJE MAX328CPE MAX329
Text: 19-1006; Rev 2; 9/01 Ultra-Low Leakage Monolithic CMOS Analog Multiplexers Features ♦ Ultra-Low Off- and On-Leakage: 1pA Typ Designed to provide the lowest possible on- and offleakages, these multiplexers switch signals from high source impedance, providing the mux operates into a
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MAX328/MAX329
DG508/DG509
MAX329
MAX328/MAX329
MAX328CWE
MAX328
MAX328CJE
MAX328CPE
MAX329
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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MAX328EWE T
Abstract: MAX329EWE MAX328EWE MAX328CWE
Text: 19-1006; Rev 2; 9/01 Ultra-Low Leakage Monolithic CMOS Analog Multiplexers Features ♦ Ultra-Low Off- and On-Leakage: 1pA Typ Designed to provide the lowest possible on- and offleakages, these multiplexers switch signals from high source impedance, providing the mux operates into a
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MAX328/MA329
MAX328
MAX329
MAX328/MAX329
DG508/DG509
MAX328C
MAX328EWE T
MAX329EWE
MAX328EWE
MAX328CWE
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MA335
Abstract: MA334 610J KV1823 KV1824 KV1832 KV1841 MA329 MA333 MA342-B
Text: - % % tt KV1821TLOO f t * 5Ê t t P Vrh Vr mW (V) (V) £ max Qtnin VR (V) m in t y p max V1(V) VZ (V) M it ve o SO 29 KV1824 M it veo 50 29 KV1832 M it veo 50 28 KV1841 M it ve o 50 15 MA329 MA 331 fâT Tun ve o MA333 fâT Tun MA334 fôT Tun 34 30 MA335
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KV1821TLOO
KV1821TR00
KV1823
KV1824
KV1832
KV1841
MA334
MA335
MA338
HA339
610J
KV1823
KV1832
MA329
MA333
MA342-B
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DIODE D28 06
Abstract: MA362 MA840 MA344 MA334 MA366
Text: S S Mini Type 2 Pin D79 S Mini Type 2 Pin (D4) S Mini Type 2 Pin Flat (D3) Mini Type 3 Pin (D12) Mini Type 4 Pin (D14) Vr (V) CD1 (PF) 30 14.360 -16.340 2 30 11.233 -12.781 MA339 32 MA329 To 25 <0.6 3 2.020 - 2.367 25 <0.72 14.220 -15.473 2 2.132 ~ 2.321
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MA360
MA2S372
MA372
MA372J
MA321
MA334
MA339
MA329
MA335
MA366
DIODE D28 06
MA362
MA840
MA344
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MA1051
Abstract: MA1056 MA1000 Series MA1240 MA1043 MA1062 MA1150 MA1360 MA3000 Series MA1024
Text: Diodes IVariable Capacitance Diodes Application Type No. o MA363 MA372 o U H F/ VHF T uning MA321 MA334 MA344 MA360 MA339 Vr V V r (V) 30 2 30 3 30 3 2 2 30 3 30 2 A MA2S372 30 MA372J 32 AU Band Tuning CATV Tuning U H F/ VHF Tuning U H F/ VHF AFC FM-AM AFC
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MA1000
MA4000
MA321
MA334
MA344
MA360
MA339
MA363
MA372
MA2S372
MA1051
MA1056
MA1000 Series
MA1240
MA1043
MA1062
MA1150
MA1360
MA3000 Series
MA1024
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MA840
Abstract: MA3330 MA1000 Series MA1000
Text: Diodes I Variable Capacitance Diodes Application Type No. U HF/ VHF T u n in g Vr V CATV T u n in g UHF/ T u n in g UHF/ VHF AFC F M -A M AFC VC O ro (PF) (PF) (O ) Package No. 30 2 1 3 6 6 -1 6 6 6 25 2.10 -2 .5 6 < 0.5 Mira (2 puis) MA334 30 3 1 0 3 3 —1290
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MA1000
MA4000
MA1000/4000
500/370mW
MA4091X
001E210
MA840
MA3330
MA1000 Series MA1000
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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MN115P
MN116P
MN1201A
MN1201M
MN1201S
MN1202M
MN1204A
MN1204B
MN1204E
MN1204F
an6512n
mn1225
MN1280
mn6520
MN6130
MN6147C
MN12C261D
MN12C201D
MN3107
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KV1824
Abstract: MA334 417b 610J KV1823 KV1832 KV1841 MA329 MA333
Text: - ft * % tt KV1821TLOO P £ Vr h Vr mW (V) (V) min typ ¡Rtnax Qtnin Ct.Cjt(pF) - fdmax S S J t Ct(Vl)/Ct(V2) 5Ê tt MM % 197 B max VR (V) min typ max V1(V) VZ (V) (Q ) V r (V) { (MHz) ( u A ) V r <V> KV1821ÎR00 ¿ f-t*'/$' Tun 61ÜJ 3 l*a jL :£ js jtf£ > fí
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KV1821TLOO
KV1821TR00
KV1823
KV1824
KV1832
KV1841
i15-0Â
25MIN
MA334
417b
610J
KV1823
KV1832
MA329
MA333
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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MA362
Abstract: DIODE D28 06 MA344 MA334
Text: SS-Mini Type 2 Pins 079 UHF/VHF Tun ins MA2S372 CATV Tuning MA2S357 SHF Tuning UHF/VHF AFC MA2S367 type S-Mini Type S-Mini 2 Pins 2 Pins Flat (D4) (D3) MA360 MA372 MA366 MA365 MA371 MA374 MA357 MA368 MA367 MA372J Mini Type 2 Pins (D U ) Mini Type 3 Pins
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MA360
MA372
MA372J
MA321
MA334
MA339
MA329
MA335
MA338
MA344
MA362
DIODE D28 06
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MN1280
Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
Text: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074
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MN1380
MN13801
MN13802
MN1381
MN13811
MN13812
MN1382
MN13821
MN13822
MN1544
MN1280
AN6512
MN15814
MN15245
2Sb1163a
mn158413
AN7210
AN7226
MN15287
MN15283
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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D3162
Abstract: osai
Text: MOSAIC SE MICONDUCTOR INC 45E D m ^35337=] 0 0 0 0 0 3 4 =] ^ M O C 32K X 8 EEPROM MEM832V/J-90/12/15 Issue 3.0: October 1991 M osaic _ - M 6 - I 3 - Z 7 . Sem iconductor r Inc. Pin Definitions 32,768 x 8 bit CMOS EEPROM A14 A12 A7 A6 A5 A4 A3 A2
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MEM832V/J-90/12/15
MIL-STD-883C
D3162
osai
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KV1823
Abstract: MA334 610J KV1824 KV1832 KV1841 MA329 MA333 MA342-B
Text: - ft * % tt KV1821TLOO P £ Vr h Vr mW (V) (V) min typ ¡Rtnax Qtnin Ct.Cjt(pF) - fdmax S S J t Ct(Vl)/Ct(V2) 5Ê tt MM % 197 B max VR (V) min typ max V1(V) VZ (V) (Q ) V r (V) { (MHz) ( u A ) V r <V> KV1821ÎR00 ¿ f-t*'/$' Tun 61ÜJ 3 l*a jL :£ js jtf£ > fí
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KV1821TLOO
KV1821TR00
KV1823
KV1824
KV1832
KV1841
MA334
MA335
MA338
HA339
KV1823
610J
KV1832
MA329
MA333
MA342-B
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DIODE S4 29
Abstract: No abstract text available
Text: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be
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