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    STMicroelectronics M29W040B90K1

    IC FLASH 4MBIT PARALLEL 32PLCC
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    DigiKey M29W040B90K1 Tube 320
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    Quest Components M29W040B90K1 46
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    M29W040B90K1 46
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    M29W040B90K1 1
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    ComSIT USA M29W040B90K1 274
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    Micron Technology Inc M29W040B90N1

    IC FLASH 4MBIT PARALLEL 32TSOP
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    Micron Technology Inc M29W040B90K6

    IC FLASH 4MBIT PARALLEL 32PLCC
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    STMicroelectronics M29W040B70N1

    IC FLASH 4MBIT PARALLEL 32TSOP
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    DigiKey M29W040B70N1 Tray 936
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    Quest Components M29W040B70N1 7
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    Micron Technology Inc M29W040B55N1

    IC FLASH 4MBIT PARALLEL 32TSOP
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    Find more M29W040 price and stock on Findchips.com

    M29W040 Datasheets (193)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M29W040 STMicroelectronics Software Drivers for M29F040 and M29W040 Flash Memories Original PDF
    M29W040 STMicroelectronics NOT FOR NEW DESIGN - 4 MBIT (512KB X8, UNIFORM BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY Original PDF
    M29W040 STMicroelectronics NOT FOR NEW DESIGN - 4 MBIT (512KB X8, UNIFORM BL Original PDF
    M29W040-100K1R STMicroelectronics 4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100K1TR STMicroelectronics 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100K1TR STMicroelectronics 4 MBit (512 kBit x 8, Uniform Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100K5R STMicroelectronics 4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100K5TR STMicroelectronics 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100K5TR STMicroelectronics 4 MBit (512 kBit x 8, Uniform Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100K6R STMicroelectronics 4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100K6TR STMicroelectronics 4 MBit (512 kBit x 8, Uniform Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100K6TR STMicroelectronics 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100N1R STMicroelectronics 4 MBit (512 kBit x 8, Uniform Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100N1R STMicroelectronics 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100N1TR STMicroelectronics 4 MBit (512 kBit x 8, Uniform Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100N1TR STMicroelectronics 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100N5R STMicroelectronics 4 MBit (512 kBit x 8, Uniform Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100N5R STMicroelectronics 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100N5TR STMicroelectronics 4 MBit (512 kBit x 8, Uniform Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W040-100N5TR STMicroelectronics 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory Original PDF
    ...

    M29W040 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PLCC32

    Abstract: TSOP32 AN1122 M29W040 M29W040B CP 2AA
    Text: M29W040B 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS


    Original     		PDF M29W040B 512Kb PLCC32 TSOP32 PLCC32 TSOP32 AN1122 M29W040 M29W040B CP 2AA

    M29W040

    Abstract: PLCC32 TSOP32
    Text: M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical – Chip: 2.5 sec typical


    Original     		PDF M29W040 100ns 12MHz) M29W040 PLCC32 TSOP32

    plcc32 pinout

    Abstract: TSOP32 M29W040 PLCC32
    Text: M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical – Chip: 2.5 sec typical


    Original     		PDF M29W040 100ns 12MHz) 29W040 PLCC32 120ns 150ns TSOP32 200ns plcc32 pinout TSOP32 M29W040 PLCC32

    AN1122

    Abstract: M29W040 M29W040B PLCC32 TSOP32
    Text: M29W040B 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS


    Original     		PDF M29W040B 512Kb PLCC32 TSOP32 000mentioned AN1122 M29W040 M29W040B PLCC32 TSOP32

    plcc32 pinout

    Abstract: TSOP32 Package
    Text: M29W040 VERY LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 100ns 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Sector: 1.5 sec typical


    Original     		PDF M29W040 100ns 12MHz) M29W040 120ns 150ns 200ns AI01827B plcc32 pinout TSOP32 Package

    M29W040

    Abstract: M29W040B PLCC32 TSOP32 STMicroelectronics PLCC trace code
    Text: M29W040 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W040 is replaced by the M29W040B 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical


    Original     		PDF M29W040 512Kb M29W040 M29W040B 100ns 12MHz) M29W040B PLCC32 TSOP32 STMicroelectronics PLCC trace code

    AN1122

    Abstract: M29W040 M29W040B PLCC32 TSOP32
    Text: M29W040B 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS


    Original     		PDF M29W040B 512Kb PLCC32 TSOP32 000is AN1122 M29W040 M29W040B PLCC32 TSOP32

    TSOP32

    Abstract: plcc32 pinout TSOP32 Package M29W040 PLCC32 TSOP-32
    Text: M29W040 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical


    Original     		PDF M29W040 512Kb 100ns 12MHz) PLCC32 120ns 150ns TSOP32 200ns TSOP32 plcc32 pinout TSOP32 Package M29W040 PLCC32 TSOP-32

    M29W040

    Abstract: PLCC32 TSOP32
    Text: M29W040 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical – Chip: 2.5 sec typical


    Original     		PDF M29W040 512Kb 100ns 12MHz) M29W040 PLCC32 TSOP32

    Untitled

    Abstract: No abstract text available
    Text: M29W040B 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS


    Original     		PDF M29W040B 512Kb PLCC32 TSOP32 10cations

    AN1122

    Abstract: M29W040 M29W040B PLCC32 TSOP32 CP 2AA
    Text: M29W040B 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS


    Original     		PDF M29W040B 512Kb PLCC32 TSOP32 AN1122 M29W040 M29W040B PLCC32 TSOP32 CP 2AA

    Untitled

    Abstract: No abstract text available
    Text: M29W040 VERY LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY FAST ACCESS TIME: 100ns 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Sector: 1.5 sec typical – Bulk: 2.5 sec typical


    Original     		PDF M29W040 100ns 12MHz)

    AN945

    Abstract: m29f040 library AM29F040B AN945 data sheet M29F040 M29W040 MC68331 ST10R163 AM29F040 i80960
    Text: AN945 APPLICATION NOTE Software Drivers for M29F040 and M29W040 Flash Memories CONTENTS Introduction The M29F040 Programming Model Modifying code from Am29F040 Generating STMicroelectronics Code C Library Functions Adapting the Software for the Target System


    Original     		PDF AN945 M29F040 M29W040 M29F040 Am29F040 M29W040, AN945 m29f040 library AM29F040B AN945 data sheet MC68331 ST10R163 i80960

    STMICROELECTRONICS MSL

    Abstract: CDIP32 package CDIP32 M29F040B TSOP32 Package M29W040B PDIP32 PLCC32 QRFL0004 TSOP32
    Text: QRFL0004 QUALIFICATION REPORT M29F040B, M29W040B T6X-U35: 4 Mbit x8 Single Supply Flash Memory INTRODUCTION The M29F040B and M29W040B are 4 Mbit Single Supply (respectively 5V and 3V) Flash memory products with Uniform Block partitioning and organized as 512 KByte of 8 bits each. Products can be programmed and erased in-system or in standard EPROM programmers.


    Original     		PDF QRFL0004 M29F040B, M29W040B T6X-U35: M29F040B T6X-U35 STMICROELECTRONICS MSL CDIP32 package CDIP32 TSOP32 Package PDIP32 PLCC32 QRFL0004 TSOP32

    AN1185

    Abstract: AN1191 M29F040 M29F040B M29W040 M29W040B A/M29F040B(45/55/70/GR-468
    Text: AN1191 APPLICATION NOTE Software Drivers for the M29F040B and M29W040B Flash Memories CONTENTS • INTRODUCTION ■ THE M29F040B PROGRAMMING MODEL ■ WRITING C CODE FOR THE M29F040B ■ C LIBRARY FUNCTIONS PROVIDED ■ PORTING THE DRIVERS TO THE TARGET SYSTEM


    Original     		PDF AN1191 M29F040B M29W040B M29F040B M29W040B, AN1185 AN1191 M29F040 M29W040 A/M29F040B(45/55/70/GR-468

    M29W040B

    Abstract: AN1122 JESD97 M29W040 PLCC32 TSOP32 CP 2AA
    Text: M29W040B 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS


    Original     		PDF M29W040B 512Kb PLCC32 TSOP32 M29W040B AN1122 JESD97 M29W040 PLCC32 TSOP32 CP 2AA

    Untitled

    Abstract: No abstract text available
    Text: , SGS-THOMSON . raDwunnteinMiiiiiDei M29W040 VERY LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512Kx 8, Sector Erase FLASH MEMORY • FAST ACCESS TIME: 100ns ■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ BYTE PROGRAMMING TIME: 12|us typical


    OCR Scan     		PDF M29W040 512Kx 100ns 12MHz) TSOP32 TSOP32

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12*is typical ER ASETIM E - Block: 1.5 sec typical - Chip: 2.5 sec typical


    OCR Scan     		PDF M29W040 100ns 12MHz)

    Untitled

    Abstract: No abstract text available
    Text: M29W040B 4 Mbit 512Kbx8, Uniform Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME - 1 Ojas p e r B y te typ ical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS


    OCR Scan     		PDF M29W040B 512Kbx8, TSOP32

    Untitled

    Abstract: No abstract text available
    Text: Æ T S C S -THOMSON * 7 #. ÜO g^(& l^(gWiQ(gi M29W040 4 Mb (512K x 8, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ BYTE PROGRAMMING TIME: 12jjs typical


    OCR Scan     		PDF M29W040 100ns 12jjs 12MHz) 100ns 120ns 150ns 200ns PLCC32

    Untitled

    Abstract: No abstract text available
    Text: M29W040 4 Mbit 512Kb x 8, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ BYTE PROGRAMMING TIME: 12jjs typical ■ ERASE TIME - Block: 1.5 sec typical


    OCR Scan     		PDF M29W040 512Kb 100ns 12jjs 12MHz) TSOP32

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON raDwunnteinMiiiiiDei M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns > BYTE PROGRAMMING TIME: 12|us typical > ERASE TIME


    OCR Scan     		PDF M29W040 100ns 12MHz) TSOP32 TSOP32

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON raDwunnteinMiiiiiDei M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns > BYTE PROGRAMMING TIME: 12|us typical > ERASE TIME


    OCR Scan     		PDF M29W040 100ns PLCC32 TSOP32 12MHz) TSOP32 TSOP32b

    Untitled

    Abstract: No abstract text available
    Text: w # S G S -T H O M S O N V # « RitlD M li[Lli©inS lii!lD©i M29W040 4 Mb 512K x 8, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12|is typical


    OCR Scan     		PDF M29W040 100ns 12MHz) TSOP32