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    M28C17B Search Results

    M28C17B Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M28C17B STMicroelectronics 16 KBIT (2KB X8) PARALLEL EEPROM WITH SOFTWARE DATA PROTECTION Original PDF
    M28C17B-120K1TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C17B-120K6TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C17B-120WK1TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C17B-120WK6TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C17B-150WK1TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C17B-150WK6TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C17B-90K1TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C17B-90K6TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C17B-W STMicroelectronics 16 KBIT (2KB X8) PARALLEL EEPROM WITH SOFTWARE DATA PROTECTION Original PDF

    M28C17B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    M28C16

    Abstract: M28C16B M28C17B PLCC32
    Text: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection DATA BRIEFING • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)


    Original     		M28C16B M28C17B M28CxxB M28CxxB-W PLCC32 M28C16B M28C17B 2048x8 M28C16 M28C16 PLCC32 PDF

    M28C16B

    Abstract: M28C17B PLCC32
    Text: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection NOT FOR NEW DESIGN • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■


    Original     		M28C16B M28C17B M28CxxB M28CxxB-W PLCC32 M28C16B M28C17B 2048x8 PLCC32 PDF

    PLCC32

    Abstract: M28C16B M28C17B
    Text: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)


    Original     		M28C16B M28C17B M28CxxB M28CxxB-W PLCC32 M28C16B M28C17B 2048x8 PLCC32 PDF

    M28C16B

    Abstract: M28C17B PLCC32
    Text: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)


    Original     		M28C16B M28C17B M28CxxB M28CxxB-W PLCC32 M28C16B M28C17B 2048x8 PLCC32 PDF

    PDIP28

    Abstract: EEPROMs M28C16A M28C16A-W M28C16B M28C16B-W M28C17A M28C17A-W M28C17B M28C17B-W
    Text: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 150ns. They can also be randomly written at a Byte level without previous erasure. Page


    Original     		150ns. memIP28* TSOP32, PLCC32, PDIP32 FLPARAL/0699 PDIP28 EEPROMs M28C16A M28C16A-W M28C16B M28C16B-W M28C17A M28C17A-W M28C17B M28C17B-W PDF

    footprint so44

    Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
    Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad


    Original     		operat911) D-90449 BRMEMSEL/0699 footprint so44 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi PDF

    plcc32

    Abstract: PDIP28 eeprom parallel st PDIP24 M28C64C M28C64-W M28C16A M28C16A-W M28C16B M28C16B-W
    Text: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 120ns. They can also be randomly written at a Byte level without previous erasure. Page


    Original     		120ns. M28C16B-W 120ns, M28C17A 150ns, M28C17A-W 250ns, M28C17B M28C17B-W plcc32 PDIP28 eeprom parallel st PDIP24 M28C64C M28C64-W M28C16A M28C16A-W M28C16B M28C16B-W PDF

    TAG 9109

    Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
    Text: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in


    Original     		286-CJ103 TAG 9109 M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle PDF

    Untitled

    Abstract: No abstract text available
    Text: M 28C16B M 28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at Vcc=5V ■ Single Supply Voltage: - 4.5 V to 5.5 V for M28CxxB - 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)


    OCR Scan     		28C16B 28C17B M28CxxB M28CxxB-W M28C16B M28C17B 2048x8 PDF