Untitled
Abstract: No abstract text available
Text: ESMT M13S64164A Revision History Revision 0.1 23 Oct. 2006 - Original Revision 0.2 (06 Jun. 2007) - Add BGA type spec Revision 0.3 (20 Jul. 2007) - Modify BGA assignment Revision 0.4 (01 Oct. 2007) - Modify IDD spec. Revision 1.0 (20 Nov. 2007) - Delete “Preliminary”
|
Original
|
M13S64164A
M13S64164A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ESM T M13S64164A 2Y DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition
|
Original
|
M13S64164A
|
PDF
|
CKE 2009
Abstract: M13S64164A CL301
Text: ESMT M13S64164A Operation Temperature Condition -40°C~85°C DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS
|
Original
|
M13S64164A
CKE 2009
M13S64164A
CL301
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ESMT M13S64164A DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )
|
Original
|
M13S64164A
|
PDF
|
M13S64164A
Abstract: No abstract text available
Text: ESMT Preliminary M13S64164A Revision History Revision 0.1 23 Oct. 2006 - Original Revision 0.2 (06 Jun. 2007) - Add BGA type spec Revision 0.3 (20 Jul. 2007) - Modify BGA assignment Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007
|
Original
|
M13S64164A
M13S64164A
|
PDF
|
DDR SDRAM
Abstract: BGA60 m13s64164a
Text: ESMT M13S64164A 2Y DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition
|
Original
|
M13S64164A
DDR SDRAM
BGA60
m13s64164a
|
PDF
|
CKE 2009
Abstract: M13S64164A
Text: ESMT M13S64164A DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )
|
Original
|
M13S64164A
CKE 2009
M13S64164A
|
PDF
|
DDR SDRAM
Abstract: No abstract text available
Text: ESMT M13S64164A 2Y Automotive Grade DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition
|
Original
|
M13S64164A
DDR SDRAM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M13S64164A Revision History Revision 0.1 23 Oct. 2006 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Oct. 2006 Revision : 0.1 1/48 ESMT Preliminary M13S64164A DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Original
|
M13S64164A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ESM T M13S64164A 2Y Automotive Grade DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition
|
Original
|
M13S64164A
|
PDF
|
DDR SDRAM
Abstract: No abstract text available
Text: ESMT M13S64164A 2Y Operation Temperature Condition -40°C~85°C DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK )
|
Original
|
M13S64164A
DDR SDRAM
|
PDF
|
M13S2561616A-5TG
Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now
|
Original
|
256Kb
40/44L-TSOPII
M11B416256A-25JP
M11B416256A-35TG
M11L416256SA-35JP
M11L416256SA-35TG
40L-SOJ
44-40L-TSOPII
128Mb
M13S2561616A-5TG
90-FBGA
M12L64164A-7T
M13S2561616A -5T
M11B416256A-25JP
diode 6BG
90FBGA
M12L128168A-6TG
M12L16161A
TSOPII
|
PDF
|