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    DIM800XSM33-F000

    Abstract: DS5906-1 power transistor 1802
    Text: DIM800XSM33-F000 Single Switch IGBT Module Replaces DS5906-1.2 DS5906-2 August 2011 LN28652 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)


    Original     		PDF DIM800XSM33-F000 DS5906-1 DS5906-2 LN28652) DIM800XSM33-F000 power transistor 1802

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    Abstract: No abstract text available
    Text: DIM800XSM33-F000 Single Switch IGBT Module Replaces DS5906-1.2 DS5906-2 August 2011 LN28652 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)


    Original     		PDF DIM800XSM33-F000 DS5906-1 DS5906-2 LN28652)