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    Samsung Semiconductor KM416C1200CJ-6

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    Samsung Semiconductor KM416C1200BT-L6

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    Samsung Semiconductor KM416C1200AJ-6

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    Samsung Semiconductor KM416C1200BJ-6

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    SEC KM416C1200AJ-6

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    KM416C1200 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416C1200B Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1200BJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1200BJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1200BJ-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1200BJL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1200BJL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1200BJL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1200BT-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1200BT-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1200BT-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1200BTL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1200BTL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1200BTL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1200C Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1200CJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1200CJ-5 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1200CJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1200CJ-6 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1200CJ-L-5 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1200CJL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF

    KM416C1200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    km416c1200

    Abstract: KM416C1000C KM416C1200C KM416V1000C KM416V1200C
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    Original     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 1200C 400mil km416c1200 KM416C1000C KM416C1200C KM416V1000C KM416V1200C

    C1000B

    Abstract: KM416C1000B KM416C1200B KM416V1000B KM416V1200B C-1000B C1200B
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power


    Original     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 16Bit 1Mx16 C1000B KM416C1000B KM416C1200B KM416V1000B KM416V1200B C-1000B C1200B

    KM416C1000C

    Abstract: km416c1200 KM416V1200 KM416C1200C KM416V1000C KM416V1200C
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    Original     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 1200C 400mil KM416C1000C km416c1200 KM416V1200 KM416C1200C KM416V1000C KM416V1200C

    km416c1200j

    Abstract: km416c1200 MAS 10 RCD 71FC
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7Tmi4E D01b3ña 731 SMGK CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynam ic Random A ccess Memory. Its


    OCR Scan     		PDF KM416C1200 KM416C1200-7 130ns KM416C1200-8 150ns KM416C1200-10 100ns 180ns cycles/16ms km416c1200j MAS 10 RCD 71FC

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D KM416C1200L/LL • 7^4142 DDlbmO TG6 « S H C K CMOS DRAM 1 M x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200L/LL is a CMOS high speed 1,048,576 b itx 1 6 D ynam ic Random A ccess Memory.


    OCR Scan     		PDF KM416C1200L/LL KM416C1200L/LL KM416C1200L/LL-7 130ns KM416C1200L/LL-8 KM416C1200LVLL-10 100ns 180ns Dlb432

    KM416C1200

    Abstract: TCA 1085 km416c1200j
    Text: CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The S am sung KM416C1200 is a CMOS h ig h speed 1,048,576 bit x 16 D ynam ic Random A ccess Memory. Its de sig n is op tim ize d fo r high pe rform ance a p p lica tio n s


    OCR Scan     		PDF KM416C1200 KM416C1200-7 KM416C1200-8 KM416C1200-10 130ns 150ns 180ns KM416C1200 TCA 1085 km416c1200j

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-ll) are optional features of this family. All of this family have CASbefore-RAS refresh, ftAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in t-version. This


    OCR Scan     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 64ms/16ms

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C1200 KM416C1200-7 KM416C1200-8 KM416C1200-10 100ns 130ns 150ns 180ns KM416C1200

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1 OPPA, KM416V12PPA CMOS DRAM 1M x 16Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1 KM416V12PPA 16Bit 1Mx16 DQ8DQ15

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C1200A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC KM416C1200A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1200A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1200A-8/A-L8/A-F8 80ns 20ns


    OCR Scan     		PDF KM416C1200A/A-L/A-F KM416C1200A-6/A-L6/A-F6 110ns KM416C1200A-7/A-L7/A-F7 130ns KM416C1200A-8/A-L8/A-F8 150ns cycles/16ms cycles/128ms

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1Mx16 DG23333

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C1200 KM416C1200 130ns KM416C1200-8 KM416C1200-10 KM416C1200-7 100ns 180ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: KM416C1200BJ C M O S DRAM ELECTRO NICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1200BJ 1Mx16 7Tb414E GD3D331

    KM416C1200A

    Abstract: KM416C1200AT KM416C1200AJ
    Text: CMOS DRAM KM416C1200A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tR C KM416C1200A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1200A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1200A-8/A-L8/A-F8 80ns 20ns


    OCR Scan     		PDF KM416C1200A/A-L/A-F KM416C1200A/A-L/A-F KM416C1200A/A- 42-LEAD 44-LEAD KM416C1200A KM416C1200AT KM416C1200AJ

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C1200 1 M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C1200 KM416C1200 KM416C1200-7 130ns KM416C1200-8 150ns 100ns 180ns KM416C1200-10

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    OCR Scan     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A 16Bit 1Mx16 7Tb4142 GG23317

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 1,048,576 x16 bit Fast Page M ode CM OS DRAMs. Fast Page M ode offers high speed random acce ss of m em ory ce lls w ithin the sam e row. Pow er su pply vo lta g e + 5 .0 V o r + 3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A 16Bit 1Mx16

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1 OPPA, KM416V12PPA CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1 KM416V12PPA 1Mx16Bit 1Mx16 002D331

    KM416C1200

    Abstract: No abstract text available
    Text: S A MS UN G E L E C T R O N I C S INC b7E D • KM416C1200 7 T m i 4 E 0 0 1 b 3 ññ 731 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM416C1200 KM416C1200 KM416C1200-7 130ns KM416C1200-8 150ns KM416C1200-10 100ns 180ns 200/is

    KM416C1200a

    Abstract: km416c1200 KM416V1000A samsung pram V1000A C1200A C1000A
    Text: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 1,048,576 x16 bit Fast Page M ode C M O S D RAM s. Fast P age M ode o ffe rs high speed random a c c e s s o f m em o ry ce lls w ith in th e sa m e row. P o w e r su p p ly vo lta g e + 5 .0 V o r + 3 .3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A 16Bit 1Mx16 DQ8-DQ15 D020331 KM416C1200a km416c1200 KM416V1000A samsung pram V1000A C1200A C1000A

    Untitled

    Abstract: No abstract text available
    Text: KM416C1200L/LL CMOS DRAM 1M x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200L/LL is a CMOS high speed 1,048,576 b i t x i 6 Dynamic Random Access Memory. It's design is optimized for high performance applica­


    OCR Scan     		PDF KM416C1200L/LL KM416C1200ULL-7 KM416C1200L/LL-8 KM416C1200L/LL-10 130ns 150ns 180ns KM416C1200L/LL

    C1000B

    Abstract: C-1000B
    Text: KM416C1200BT ELECTRONICS C MO S D R A M 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1200BT 16Bit 1Mx16 KM416C1200BT) 7Tb414E C1000B C-1000B

    C-1000B

    Abstract: No abstract text available
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1 Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1Mx16 C-1000B