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    K4S280832B Search Results

    K4S280832B Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S280832B Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TC10 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TC1H Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TC1L Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TC75 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TC80 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TCL10 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TCL1H Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TCL1L Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TCL75 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TCL80 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TL10 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TL1H Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TL1L Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TL75 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TL80 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF

    K4S280832B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: shrink-TSOP K4S280832B-N CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S280832B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8


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    K4S280832B-N K4S280832B-N 54-sTSOP PDF

    K4S280432B-TC75

    Abstract: 18EA M390S1723BT1-C75 16MX8 32MX72 K4S280832B-TC75 M390S3320BT1-C75
    Text: SERIAL PRESENCE DETECT PC133 Registered DIMM PC133 Registered SDRAM DIMM 168pin Type SPD Specification REV. 0 Sep. 1999 REV. 0 Sep. 1999 SERIAL PRESENCE DETECT PC133 Registered DIMM M390S1723BT1-C75 •Organization : 16MX72 •Composition : 16MX8 * 9ea •Used component part # : K4S280832B-TC75


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    PC133 168pin) M390S1723BT1-C75 16MX72 16MX8 K4S280832B-TC75 4K/64ms 128bytes K4S280432B-TC75 18EA M390S1723BT1-C75 16MX8 32MX72 K4S280832B-TC75 M390S3320BT1-C75 PDF

    K4S280832B

    Abstract: No abstract text available
    Text: K4S280832B CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832B CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM


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    K4S280832B 128Mbit K4S280832B A10/AP PDF

    K4S280832B

    Abstract: No abstract text available
    Text: K4S280832B CMOS SDRAM PIN CONFIGURATION Top view VDD DQ0 VDDQ N.C DQ1 VSSQ N.C DQ2 VDDQ N.C DQ3 VSSQ N.C VDD N.C WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47


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    K4S280832B A10/AP 54Pin 400mil 875mil) A10/AP K4S280832B PDF

    K4S280832B

    Abstract: No abstract text available
    Text: Data Sheet Part No. ISSD32M8STC Irvine Sensors Corporation Microelectronics Products Division 256 Mbit 32M x 8 Synchronous DRAM Memory Stack Features: q Low Profile: same PCB footprint as a


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    ISSD32M8STC K4S280832B PDF

    M366S3323BT0-C1H

    Abstract: M366S3323BT0-C1L M366S3323BT0-C80
    Text: PC100 Unbuffered DIMM M366S3323BT0 M366S3323BT0 SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S3323BT0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PC100 M366S3323BT0 M366S3323BT0 32Mx64 16Mx8, 400mil 168-pin M366S3323BT0-C1H M366S3323BT0-C1L M366S3323BT0-C80 PDF

    M374S3323BT0-C1H

    Abstract: M374S3323BT0-C80
    Text: M374S3323BT0 PC100 Unbuffered DIMM M374S3323BT0 SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S3323BT0 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


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    M374S3323BT0 PC100 M374S3323BT0 32Mx72 16Mx8, 400mil 168-pin M374S3323BT0-C1H M374S3323BT0-C80 PDF

    k4s2808

    Abstract: M374S1723BTS M374S1723BTS-G1H M374S1723BTS-G1L M374S1723BTS-G80 1h1080
    Text: M374S1723BTS PC100 Unbuffered DIMM M374S1723BTS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1723BTS is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


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    M374S1723BTS PC100 M374S1723BTS 16Mx72 16Mx8, 400mil 168-pin k4s2808 M374S1723BTS-G1H M374S1723BTS-G1L M374S1723BTS-G80 1h1080 PDF

    Untitled

    Abstract: No abstract text available
    Text: Shrink-TSOP 144pin SDRAM SODIMM M464S3323BN0 M464S3323BN0 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on sTSOP2 16Mx8, 4Banks, 4K Refresh, 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3323BN0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    M464S3323BN0 M464S3323BN0 32Mx64 16Mx8, 144-pin 144pin PDF

    M366S0924CTS-C7A

    Abstract: M366S1723CTS-C7A K4S640832D-TC75 M366S0823DTS-C7A M374S0823DTS-C7A K4S281632B-TC75
    Text: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT PC133 Single Sided Unbuffered SDRAM DIMM 168pin SPD Specification REV. 0 March. 2000 REV. 0 March. 2000 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT M366S0424DTS-C7A(Intel SPD 1.2B ver. base) • Organization : 4Mx64


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    PC133 168pin) M366S0424DTS-C7A 4Mx64 4Mx16 K4S641632D-TC75 000mil 4K/64ms M366S0924CTS-C7A M366S1723CTS-C7A K4S640832D-TC75 M366S0823DTS-C7A M374S0823DTS-C7A K4S281632B-TC75 PDF

    M374S1723BTS

    Abstract: No abstract text available
    Text: M374S1723BTS PC133 Unbuffered DIMM Revision History Revision 0.0 Oct., 1999 • PC133 first published. REV. 0 Oct. 1999 M374S1723BTS PC133 Unbuffered DIMM M374S1723BTS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


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    M374S1723BTS PC133 M374S1723BTS 16Mx72 16Mx8, PDF

    Untitled

    Abstract: No abstract text available
    Text: M466S1723BT2 PC66 SODIMM M466S1723BT2 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S1723BT2 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    M466S1723BT2 M466S1723BT2 16Mx64 16Mx8, 400mil 144-pin PDF

    K4S280832B

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 4Layer SPD Specification(128Mb B-die base) Rev. 0.0 August 1999 Rev 0.0 Aug. 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0924BTS-C80/C1H/C1L • Organization : 8Mx64 • Composition : 8Mx16 *4


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    PC100 168pin) 128Mb M366S0924BTS-C80/C1H/C1L 8Mx64 8Mx16 K4S281632B-TC80/C1H/C1L 000mil K4S280832B PDF

    K4S280832B-TC1H

    Abstract: 32MX72 16MX8 K4S280832 intel date code format
    Text: PC100 Registered DIMM SERIAL PRESENCE DETECT PC100 Registered DIMM 168pin Intel Type Rev1.2 SPD Specification(128Mb B-die base) Rev. 0.0 August 1999 Rev. 0.0 Aug. 1999 PC100 Registered DIMM SERIAL PRESENCE DETECT M377S1723BT3-C1H/C1L (1.2ver) • Organization : 16MX72


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    PC100 168pin) 128Mb M377S1723BT3-C1H/C1L 16MX72 16MX8 K4S280832B-TC1H/C1L 4K/64ms K4S280832B-TC1H 32MX72 16MX8 K4S280832 intel date code format PDF

    CDC2509

    Abstract: No abstract text available
    Text: PC100 Registered DIMM M377S1723BT3 M377S1723BT3 SDRAM DIMM Intel 1.2 ver Base 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S1723BT3 is a 16M bit x 72 Synchronous


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    PC100 M377S1723BT3 M377S1723BT3 16Mx72 16Mx8, 16Mx8 400mil 18-bits CDC2509 PDF

    CDC2509

    Abstract: M377S3323BT0-C1H M377S3323BT0-C1L B1A11
    Text: PC100 Registered DIMM M377S3323BT0 M377S3323BT0 SDRAM DIMM Intel 1.2 ver Base 32Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S3323BT0 is a 32M bit x 72 Synchronous


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    PC100 M377S3323BT0 M377S3323BT0 32Mx72 16Mx8, 16Mx8 400mil 18-bits CDC2509 M377S3323BT0-C1H M377S3323BT0-C1L B1A11 PDF

    K4S281632B-TC75

    Abstract: K4S640832D-TC75 M366S1623DT0-C7A K4S280832A-TC75
    Text: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT PC133 Double Sided Unbuffered SDRAM DIMM 168pin SPD Specification REV. 0 March. 2000 REV. 0 March. 2000 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT M366S0824DT0-C7A(Intel SPD 1.2B ver. base) • Organization : 8Mx64


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    PC133 168pin) M366S0824DT0-C7A 8Mx64 4Mx16 K4S641632D-TC75 375mil 4K/64ms K4S281632B-TC75 K4S640832D-TC75 M366S1623DT0-C7A K4S280832A-TC75 PDF

    M390S1723BT1-C75

    Abstract: M390S1723BT1 PC133 registered reference design
    Text: M390S1723BT1 PC133 Registered DIMM Revision History Revision 0.0 Sep. 1999 • PC133 first published REV. 0 Sep. 1999 M390S1723BT1 PC133 Registered DIMM M390S1723BT1 SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


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    M390S1723BT1 PC133 M390S1723BT1 16Mx72 16Mx8, M390S1723BT1-C75 PC133 registered reference design PDF

    M374S3323BT0-C75

    Abstract: No abstract text available
    Text: M374S3323BT0 PC133 Unbuffered DIMM Revision History Revision 0.0 Oct. 1999 • PC133 first published. REV. 0.0 Oct. 1999 M374S3323BT0 PC133 Unbuffered DIMM M374S3323BT0 SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


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    M374S3323BT0 PC133 M374S3323BT0 32Mx72 16Mx8, M374S3323BT0-C75 PDF

    M366S3323BT0-C75

    Abstract: No abstract text available
    Text: M366S3323BT0 PC133 Unbuffered DIMM Revision History Revision 0.0 Oct. 1999 • PC133 first published. REV. 0.0 Oct. 1999 M366S3323BT0 PC133 Unbuffered DIMM M366S3323BT0 SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


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    M366S3323BT0 PC133 M366S3323BT0 32Mx64 16Mx8, M366S3323BT0-C75 PDF

    K4S280832B-TL10

    Abstract: K4S281632B-TL10 M466S0924BT0-L10 M466S1723BT2-L10 M466S1723BT3-L10 M466S1724BT2-L10
    Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb B-die base) Rev. 0.0 August 1999 Rev 0.0 Aug. 1999 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924BT0-L10, C10 • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632B-TL10, C10


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    144pin) 128Mb M466S0924BT0-L10, 8Mx64 8Mx16 K4S281632B-TL10, 000mil 4K/64ms 128bytes 256bytes K4S280832B-TL10 K4S281632B-TL10 M466S0924BT0-L10 M466S1723BT2-L10 M466S1723BT3-L10 M466S1724BT2-L10 PDF

    M366S1723BTS

    Abstract: M366S1723BTS-C1H M366S1723BTS-C1L
    Text: PC100 Unbuffered DIMM M366S1723BTS M366S1723BTS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1723BTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PC100 M366S1723BTS M366S1723BTS 16Mx64 16Mx8, 400mil 168-pin M366S1723BTS-C1H M366S1723BTS-C1L PDF

    K4S280832C-TC75

    Abstract: M390S1723CTU-C1H M390S1723CTU-C1L M390S1723CTU-C75 PC133 registered reference design
    Text: M390S1723CTU PC133/PC100 Registered DIMM Revision History Revision 0.1 Feb. 14, 2001 - Eliminate "Preliminary" Rev. 0.1 Feb. 2001 M390S1723CTU PC133/PC100 Registered DIMM M390S1723CTU SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


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    M390S1723CTU PC133/PC100 M390S1723CTU 16Mx72 16Mx8, 16Mx8 K4S280832C-TC75 M390S1723CTU-C1H M390S1723CTU-C1L M390S1723CTU-C75 PC133 registered reference design PDF

    M466S1723BT3-L10

    Abstract: No abstract text available
    Text: M466S1723BT3 PC66 SODIMM M466S1723BT3 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S1723BT3 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    M466S1723BT3 M466S1723BT3 16Mx64 16Mx8, 400mil 144-pin M466S1723BT3-L10 PDF