SLMA002
Abstract: TPA301 TPA301D TPA301DGN TPA301DR
Text: TPA301 350-mW MONO AUDIO POWER AMPLIFIER SLOS208D – JANUARY1998 – REVISED APRIL 2003 D Fully Specified for 3.3-V and 5-V Operation D Wide Power Supply Compatibility D OR DGN PACKAGE TOP VIEW 2.5 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL
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TPA301
350-mW
SLOS208D
JANUARY1998
TPA301
SLMA002
TPA301D
TPA301DGN
TPA301DR
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TPA301
Abstract: No abstract text available
Text: TPA301 350-mW MONO AUDIO POWER AMPLIFIER SLOS208B – JANUARY1998 – REVISED MARCH 2000 D D Fully Specified for 3.3-V and 5-V Operation Wide Power Supply Compatibility 2.5 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL – 250 mW at VDD = 3.3 V, BTL
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TPA301
350-mW
SLOS208B
JANUARY1998
250-mW
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TPA301
Abstract: 2000 watts audio amplifier schematics Audio Power Amplifier Series High-Performance 200 watt audio amplifier MO-187 SLMA002 TPA301D TPA301DGN TPA301DR
Text: TPA301 350-mW MONO AUDIO POWER AMPLIFIER SLOS208C – JANUARY1998 – REVISED MARCH 2000 D D D OR DGN PACKAGE TOP VIEW Fully Specified for 3.3-V and 5-V Operation Wide Power Supply Compatibility 2.5 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL
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TPA301
350-mW
SLOS208C
JANUARY1998
TPA301
2000 watts audio amplifier schematics
Audio Power Amplifier Series High-Performance
200 watt audio amplifier
MO-187
SLMA002
TPA301D
TPA301DGN
TPA301DR
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PDF
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power amplifier circuit diagram with pcb layout
Abstract: TPA301 Audio Power Amplifier Series High-Performance 150 watts power amplifier layout 200 watt audio amplifier 800 watt audio amplifier power transistor audio amplifier 500 watts MO-187 SLMA002 TPA301D
Text: TPA301 350-mW LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS208B – JANUARY1998 – REVISED OCTOBER 1998 D D Fully Specified for 3.3-V and 5-V Operation Wide Power Supply Compatibility 2 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL – 250 mW at VDD = 3.3 V, BTL
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TPA301
350-mW
SLOS208B
JANUARY1998
TPA301
power amplifier circuit diagram with pcb layout
Audio Power Amplifier Series High-Performance
150 watts power amplifier layout
200 watt audio amplifier
800 watt audio amplifier
power transistor audio amplifier 500 watts
MO-187
SLMA002
TPA301D
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PDF
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TPA301
Abstract: 500 watts audio amplifier diagram 150 watts power amplifier layout MO-187 SLMA002 TPA301D TPA301DGN TPA301DR
Text: TPA301 350-mW MONO AUDIO POWER AMPLIFIER SLOS208C – JANUARY1998 – REVISED MARCH 2000 D D D OR DGN PACKAGE TOP VIEW Fully Specified for 3.3-V and 5-V Operation Wide Power Supply Compatibility 2.5 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL
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TPA301
350-mW
SLOS208C
JANUARY1998
TPA301
500 watts audio amplifier diagram
150 watts power amplifier layout
MO-187
SLMA002
TPA301D
TPA301DGN
TPA301DR
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Untitled
Abstract: No abstract text available
Text: STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STW34NB20 200 V < 0.075 Ω 34 A ) s ( ct FEATURES SUMMARY • TYPICAL RDS(on) = 0.062 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY
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O-247
STW34NB20
STW34NB20
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D20NE06
Abstract: D20NE STD20NE06T4
Text: STD20NE06 N-CHANNEL 60V - 0.032 Ω - 20A DPAK "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD20NE06 60 V < 0.040 Ω 20 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.032 Ω ■ EXCEPTIONAL dv/dt CAPABILITY
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STD20NE06
STD20NE06
O-252
D20NE06
D20NE
STD20NE06T4
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W38NB20
Abstract: STW38NB20 STMicroelectronics 0560
Text: STW38NB20 N-CHANNEL 200V - 0.052 Ω - 38A TO-247 PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID STW38NB20 200 V < 0.065 Ω 38 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.052 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY
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STW38NB20
O-247
W38NB20
STW38NB20
STMicroelectronics 0560
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D20NE
Abstract: d20ne06 STD20NE06 STD20NE06T4
Text: STD20NE06 N-CHANNEL 60V - 0.032 Ω - 20A DPAK "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD20NE06 60 V < 0.040 Ω 20 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.032 Ω ■ EXCEPTIONAL dv/dt CAPABILITY
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STD20NE06
O-252
D20NE
d20ne06
STD20NE06
STD20NE06T4
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PDF
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P55NE06
Abstract: P55NE P55NE06FP STP55NE06FP p55ne0 aval morocco P55NE06 schematic diagram dc-dc stp55ne06 Part Marking TO-220 STMicroelectronics
Text: STP55NE06 STP55NE06FP N-CHANNEL 60V - 0.019 Ω - 55A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP55NE06 60 V < 0.022 Ω 55 A STP55NE06FP 60 V < 0.022 Ω 30 A FEATURES SUMMARY
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O-220/TO-220FP
STP55NE06
STP55NE06FP
STP55NE06FP
O-220
O-220FP
P55NE06
P55NE
P55NE06FP
p55ne0
aval
morocco P55NE06
schematic diagram dc-dc
Part Marking TO-220 STMicroelectronics
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IDT70914
Abstract: IDT70914S pn80 70914S25 70914S
Text: HIGH-SPEED 36K 4K x 9 SYNCHRONOUS DUAL-PORT RAM PRELIMINARY IDT70914S Integrated Device Technology, Inc. FEATURES: • High-speed clock-to-data output times — Military: 20/25ns (max.) — Commercial: 12/15/20ns (max.) • Low-power operation — IDT70914S
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IDT70914S
20/25ns
12/15/20ns
58MHz
MIL-STD-883,
68-pin
J68-1)
G68-1)
IDT70914
IDT70914S
pn80
70914S25
70914S
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Untitled
Abstract: No abstract text available
Text: STW38NB20 N-CHANNEL 200V - 0.052 Ω - 38A TO-247 PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID STW38NB20 200 V < 0.065 Ω 38 A ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s (
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STW38NB20
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: STW34NB20 N-CHANNEL 200V - 0.062 - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID STW34NB20 200 V < 0.075 34 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.062 ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED
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STW34NB20
O-247
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PDF
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W34NB20
Abstract: STW34NB20
Text: STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.062 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■
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STW34NB20
O-247
W34NB20
STW34NB20
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P55NE
Abstract: p55ne0 P55NE06 P55NE06FP STP55NE06 P55n STP55NE06FP C3921 stp55ne
Text: STP55NE06 STP55NE06FP N-CHANNEL 60V - 0.019 Ω - 55A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP55NE06 60 V < 0.022 Ω 55 A STP55NE06FP 60 V < 0.022 Ω 30 A FEATURES SUMMARY
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STP55NE06
STP55NE06FP
O-220/TO-220FP
O-220
P55NE
p55ne0
P55NE06
P55NE06FP
STP55NE06
P55n
STP55NE06FP
C3921
stp55ne
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Untitled
Abstract: No abstract text available
Text: SGT10S10, 1 HARRIS S E M I C O N D U C T O R January1998 Gate Controlled Unidirectional Transient Surge Suppressors Features Description • Blocking Voltage 100V and 270V Surgector transient surge protectors are designed to protect telecommunication equipment, data links, alarm systems,
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SGT10S10,
ary19
100mA
E135010
100inchas
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Untitled
Abstract: No abstract text available
Text: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302F-JANUARY 1993-REVISED JANUARY1998 EPIC Enhanced-Performance Implanted CMOS Submicron Process SN74LVC646A . . . DB, DW, OR PW PACKAGE (TOP VIEW ) Typical V q l p (Output Ground Bounce)
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SN54LVC646A,
SN74LVC646A
SCAS302F-JANUARY
1993-REVISED
JANUARY1998
MIL-STD-833,
JESD17
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V 4 3642 R 02V T G 3 .3 VO LT 2 M x 6 4 H IG H P E R F O R M A N C E U N B U F F E R E D D IM M S D R A M M O D U L E P R E L IM IN A R Y Features Description • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line SDRAM Module ■ 2 banks 2M x 64 bit organization
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cycles/64ms
V43642R02VTG
V43642R02
January1998
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PDF
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70914S
Abstract: No abstract text available
Text: HIGH-SPEED 36K 4K x 9 SYNCHRONOUS DUAL-PORT RAM Integrated Device Technology, Inc. FEATURES: • H igh-speed clock-to-data output tim es — M ilitary: 20/25ns (max.) — C om m ercial: 12/15/20ns (max.) • Low -power operation — IDT70914S Active: 800 mW (typ.)
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20/25ns
12/15/20ns
IDT70914S
MIL-STD-883,
68-pin
J68-1)
G68-1
80-pin
70914S
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PDF
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Untitled
Abstract: No abstract text available
Text: TISP5070H3BJ, TISF5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998-REVISED SEPTEMBER 1998 TELECOMMUNICATION SYSTEM HIGH CURRENT OVERVOLTAGE PROTECTORS
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TISP5070H3BJ,
TISF5080H3BJ,
TISP5110H3BJ,
TISP5150H3BJ
1998-REVISED
K20/21
GR-108er
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PDF
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PDSO-G8
Abstract: No abstract text available
Text: TISPL758LF3D INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES JANUARY 1998 - REVISED OCTOBER 1998 OVERVOLTAGE PROTECTION FOR LUCENT TECHNOLOGIES LCAS Symmetrical and Asymmetrical
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TISPL758LF3D
L7581/2/3
GR-1089-CORE
PDSO-G8
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PDF
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TPA301
Abstract: No abstract text available
Text: TPA301 350-mW LOW-VOLTAGE AUDIO POWER AMPLIFIER SLQ S 208 - JA N U A R Y 1998 • Fully Specified fo r 3.3-V and 5-V Operation • Wide Power Supply C om patibility 2 V - 5.5 V • O utput Power fo r R|_ = 8 Q - 350 mW at VDD = 5 V, BTL - 250 mW at VDD = 3.3 V, BTL
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TPA301
350-mW
250-mW
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Untitled
Abstract: No abstract text available
Text: TMS28F200BZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SMJS200E - JUNE 1994 - REVISED JANUARY 1998 Organization. 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture - Two 8K-Byte Parameter Blocks - One 96K-Byte Main Block
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TMS28F200BZT,
TMS28F200BZB
8-BIT/131072
16-BIT
SMJS200E
96K-Byte
128K-Byte
16K-Byte
28F200BZx70
28F200BZx80
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