HY62U8200LST
Abstract: No abstract text available
Text: HY62V8200- I /HY62U8200-(I) Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200-(I)/HY62U8200-(I) is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200-(I) / HY62U8200-(I) uses high performance CMOS process technology and
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HY62V8200-
/HY62U8200-
256Kx8bit
HY62U8200-
32pin
8x20mm
HY62U8200LST
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HY628400A
Abstract: HY628400ALG HY628400ALLG HY628400ALLR2 HY628400ALLT2 HY628400ALR2 HY628400ALT2
Text: HY628400A Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and
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HY628400A
512Kx8bit
HY628400A
0/Jan99
32pin
525mil
HY628400ALG
HY628400ALLG
HY628400ALLR2
HY628400ALLT2
HY628400ALR2
HY628400ALT2
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smoke detector schematic using microcontroller
Abstract: automatic irrigation system diagram UC3845 dc dc design tool ST62 ST62T10 C6 LVD LAMP SCHEMATIC DIAGRAM washing machine micro controller program schematic diagram rice cooker uc3845 schematic uc3845 power supply schematic
Text: ST62 FAMILY SMALL AND RUGGED MCUs 1 - ST62 POSITIONING 2 - TECHNICAL OVERVIEW 3 - ST62 DEVELOPMENT TOOLS 4 - TYPICAL APPLICATIONS ST62 Overview 9/98 1 ST62 : MAKE IT DIGITAL APPLICATION REQUIREMENTS STME9TASKESCTURE HIT L TI REA VE ARC I T OVA INN C CIFI
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BFP93A
Abstract: BFP93AW
Text: BFP93A/BFP93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 1 13 653
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BFP93A/BFP93AW
BFP93A
BFP93AW
D-74025
20-Jan-99
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IN1190A diode
Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Text: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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1N1183
IN1190
1N1183A
IN1190A
1N1199A
1N1206A
1N2054
1N2068
1N3085
-1N3092
IN1190A diode
an 80771
hfa30pa60
SCR gate drive circuit
A6F diode
HFA120FA60
HF50A060
DT93-1
HFA16PB120
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wiring diagrams* bosch biphase
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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P31/CTX
P32/CRX
P40/KW0
P41/KW1
P42/KW2
P43/KW3
P44/KW4
P45/KW5
P46/KW6
44P6N-A
wiring diagrams* bosch biphase
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Treadmill
Abstract: POWER SUPPLY for Treadmill ionizer teflon af asahi glass delay line u-key hydrocarbon polymeric symposium NIKON 13Nm
Text: 157-nm Lithography for 100-nm Node Challenges and Progress G. Dao and Y. Borodovsky Acknowledgment The Japan Electronic Journal P. Gargini, P. Silverman, F. C. Lo, A. Grenville, L. Liao, E. Panning, Orvek, and J.F. Zheng R =
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157-nm
100-nm
Treadmill
POWER SUPPLY for Treadmill
ionizer
teflon af
asahi glass delay line
u-key
hydrocarbon polymeric
symposium
NIKON
13Nm
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A1489 TRANSISTOR
Abstract: No abstract text available
Text: BFP93A/BFP93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 1 13 653
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BFP93A/BFP93AW
BFP93A
BFP93AW
D-74025
20-Jan-99
A1489 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: BFP280T/BFP280TW/BFP280TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features
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BFP280T/BFP280TW/BFP280TRW
BFP280TW
BFP280TRW
BFP280T
D-74025
Jan-99
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Untitled
Abstract: No abstract text available
Text: 2 TH I S ßl DRAW ING IS C OPYRIGHT UNPUB L I S H E D . R EL EA S ED 19 BY AMP I NCORPORATE D . ALL FOR P U B LIC A T IO N R IG H TS . I 9 LOC AG R ES ER V ED . R E V ISIONS Dl S T 53 LTR DE SC R I P T I O N 17DEC98 I I JAN99 R E V I S E D P E R OG 50 - 0 30 6
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JAN99
09MAY
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Untitled
Abstract: No abstract text available
Text: TH I S ß l D R A W I NG COPYRIGHT IS UNPUBLI SHED. RELEASED 19 BY A MP I NCORPORATE D . ALL FOR PUBLICATION RIGHTS . I9 LOC R E V ISIONS D I ST GP RESERVED. LTR DE S C R R E V I S E D PER 0 G 5 0 - 0 3 2 5 - 27.76 [5.030] DWN DATE PTION I I JAN99 LM DH REVISED
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JUNL98
JUNE98
09MAY94
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H052
Abstract: No abstract text available
Text: CNY17 Series Vishay Telefunken Optocoupler with Phototransistor Output Description The CN Y17 series consists of a phototransistor opti cally coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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CNY17
CNY17G
11-Jan-99
H052
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Untitled
Abstract: No abstract text available
Text: n 7 T H I S DRAWING C C OPYRIGHT 15 U N PU B L IS H E D . 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. , 6 4 5 2 3 19 D I ST LOC ALL R 1 G H I S R L b L R V L D . REVISIONS 53 CM DESCRIPTION C PARTS 3 2 RLSD - 2 COMPLY WI TH AMP S O L D E R A B I L I T Y
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JAN-99
20-JAN-99
amp24119
/home/amp24119/ec02B3-98
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Untitled
Abstract: No abstract text available
Text: n r THIS DRAWING 7 IS U N P U B L IS H E D . C O P Y R IG H T 2 3 4 RELEASED BY 19 AMP IN COR PO RA TE D. FOR PUBLICATION ALL R IG H T S 1 ,19 DI ST LOC R ES E R V E D . AD REVISIONS 39 P L TR 4 . 88 [ . 132] D DESCRIPTION DATE DWN APVD u REV PER 0G21- 0 0 6 2 - 9 8
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0G3C-0029-99
0G3C-0249-99
JAN99
30N0V99
03FEB00
100it
04-FEB-00
amp33743
/home/amp33743/edmmod
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Untitled
Abstract: No abstract text available
Text: 4 T H I S DRAWING I S C OPYRIGHT U N PU B L IS H E D . 19 2 3 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. , 19 LOC A LL R I G H T S RE S ER VE D. BD REVISIONS D I ST 48 LTR DESCRIPTION R E V I S E D PER EC 0 U 1 D - 0 2 6 0 - 0 0 D DATE
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0U1D-0260-00
74S002-1
74B002-3
74B002-2HIS
74B002-2
74B002-1
11JUN97
-JAN-99
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MGB90TA-X
Abstract: No abstract text available
Text: MGB90TA-X MGB90TA ULTRA HIGH BRIGHTNESS GREEN LED LAMP DESCRIPTION 09.1 '(0.36) 06.39 MGB90TA-X is high efficiency green LED lamp encapsulated in a 10mm diameter clear transparent lens with an optimum viewing angle. -1.66(0.065) 1-3.54(0.014) 010.9 (0.43)
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MGB90TA-X
MGB90TÃ
MGB90TA-X
MGB90TA-1
MGB90TA-3
Jan-99
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Rectangular LED 1mm x 5mm
Abstract: No abstract text available
Text: CRO PRELIMINARY MOB73T 1nini X 5mm RECTANGULAR BAR LED LAMP DESCRIPTION MOB73T is high brightness output orange GaAsP/GaP LED lamp encapsulated in a 1mm x 5mm rectangular bars with clear transparent lens. 1 2 .5 5 0 .1 9.S K Q .39) 2 5 .2 (D .9 9 )M 1 N .
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MOB73T
MOB73T
Jan-99
Rectangular LED 1mm x 5mm
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MIL-P-81728
Abstract: No abstract text available
Text: 7 8 DRAWING MADE THIS IN THIRD ANGLE DRAWING IS UNPUBLISHED. COPYRIGHT 19 6 5 4 3 2 1 P RO JE C TI ON BY AMP INCORPORATED. ALL LOC ,19 RELEASED FOR P U B L I C A T I O N DIST R EVISIO N S 16 AJ INTERNATIO NAL RIGHTS RESERVED. ZONE LTR D E S C R I P T IO N
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0g30-0534-98
06JAN99
mil-p-81728,
qq-n-290.
175s-3
g-jan-99
anp06s72
/hone/anp06s72/ediiinod
MIL-P-81728
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TCET110G
Abstract: TCET4100
Text: TCET110. G up to TCET4100 VISHAY Vishay Telefunken ▼ Optocoupler with Phototransistor Output Description The TCET110./ TCET2100/ TCET4100 consists of a phototransistor optically coupled to a gallium arse nide infrared-emitting diode in a 4-lead up to 16-lead
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TCET110.
TCET4100
TCET110
TCET2100/
TCET4100
16-lead
11-Ja
TCET2100
TCET110G
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Untitled
Abstract: No abstract text available
Text: MSB32TA-X CRO ULTRA HIGH BRIGHTNESS RED LED LAMP DESCRIPTION MSB32TA-X is an ultra high brightness output red GaAlAs LED lamp encapsulated in a 3mm diameter clear transparent lens. 5 brightness grouping is provided for customer's selection. ABSOLUTE MAXIMUM RATINGS
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MSB32TA-X
MSB32TA-X
-100U
IF-20mA
Jan-99
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Untitled
Abstract: No abstract text available
Text: T H I S D R A W I NG I S U N P U B L I S H E D . DIFFUSION RESTREINTE C O P Y R I G HT 19 BY AMP R E L E A S E D FOR RUB L I C AT ION L IB R E A LA D IF F U S IO N ALL RIGHTS RESERVED. INCORPORATED. TOUS D R O IT S R E S ER V ES , I9 LOG REV I S I O N S D l ST
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8JUL99
I4SEP99
9DEC99
26FEB2Û
UL94-V0
04-Jan
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Untitled
Abstract: No abstract text available
Text: MCT6H/ MCT62H VISHAY Vishay Telefunken Y Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
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MCT62H
MCT62H
1577C
11-Jan-99
11-Ja
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Untitled
Abstract: No abstract text available
Text: TCED1100 G up to TCED4100 Vishay Telefunken Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arse nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
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TCED1100
TCED4100
TCED1100/
TCED2100/
TCED4100
16-lead
11-Jan-99
TCED2100
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Untitled
Abstract: No abstract text available
Text: 7 6 5 THIS DRAWING 15 U NP U B L I 5H E D COPYRIGHT 19 RELEASED BY AMP FOR P U B L I C A T I O N INCORPORATED. 4 <3> DRAWING MADE IN THIRD ANGLE PROJECTION 3 2 DI ST LOC 19 14 AD ALL INTERNATIONAL RIGHTS RESERVED. R EV I 5 I 0 N 5 LTR ZONE DESCR I FT ION
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0G51-0
JAN-99
amp45876
amp45876/edmmod
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