IXTP120N04T2 Search Results

IXTP120N04T2 Price and Stock

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Littelfuse Inc IXTP120N04T2 MOSFET N-CH 40V 120A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP120N04T2	Tube			300	1 - 10 - 100 - 1000 $1.35847 10000 $1.35847	Buy Now
Newark	IXTP120N04T2	Bulk			300	1 - 10 - 100 $1.92 1000 $1.51 10000 $1.35	Buy Now
IXYS Corporation IXTP120N04T2 MOSFETs 120 Amps 40V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTP120N04T2					1 $2.93 10 $2.3 100 $1.88 1000 $1.51 10000 $1.51	Get Quote
Future Electronics	IXTP120N04T2	Tube			500	1 - 10 - 100 $1.31 1000 $1.31 10000 $1.31	Buy Now
TTI	IXTP120N04T2	Tube			300	1 - 10 - 100 - 1000 $1.35 10000 $1.33	Buy Now
TME	IXTP120N04T2				1	1 $2.11 10 $1.68 100 $1.51 1000 $1.41 10000 $1.41	Get Quote

IXTP120N04T2 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTP120N04T2		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 120A TO-220		Original	PDF

IXTP120N04T2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXTP120N04T2 Abstract: max2847 120a16 Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA120N04T2 IXTP120N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTA120N04T2 IXTP120N04T2 O-263 O-220 062in. 120N04T2 IXTP120N04T2 max2847 120a16
IXTA120N04T2 Abstract: IXTP120N04T2 MOSFET 20V 120A Text: IXTA120N04T2 IXTP120N04T2 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 120A Ω ≤ 6.1mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTA120N04T2 IXTP120N04T2 O-263 O-220 120N04T2 2-15-08-A IXTA120N04T2 IXTP120N04T2 MOSFET 20V 120A
Untitled Abstract: No abstract text available Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA120N04T2 IXTP120N04T2 = 40V = 120A Ω ≤ 6.1mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTA120N04T2 IXTP120N04T2 O-263 O-220 120N04T2 2-15-08-A
IXTP220N04T2 Abstract: IRF2204 IXTA200N055T2 IXYS Class D Switching Amplifiers IXTA100N04T2 IXTA120N04T2 IXTA220N04T2 IXTA90N055T2 IXTP100N04T2 IXTP120N04T2 Text: IXYS POWER Efficiency through Technology N E W P R O D U C T B RI E F 40V – 75V TrenchT2TM MOSFETs Next Generation Trench Power MOSFETs MAY 2008 OVERVIEW IXYS’ next generation TrenchT2TM Power MOSFETs are designed and optimized to meet the thermal and electrical performance of today’s energy and power management	Original	PDF	O-220 IXTP220N04T2 IRF2204 IXTA200N055T2 IXYS Class D Switching Amplifiers IXTA100N04T2 IXTA120N04T2 IXTA220N04T2 IXTA90N055T2 IXTP100N04T2 IXTP120N04T2
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