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    Text: Preliminary Technical Information IXTL2x18010T TrenchTM Power MOSFET Common-Gate Pair VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions


    Original     		IXTL2x18010T 2x100A 338B2 PDF