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IXYS Corporation IXTA220N055T MOSFET N-CH 55V 220A TO263
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IXYS Corporation IXTA220N055T7 MOSFET N-CH 55V 220A TO263-7
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IXTA220N055T Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTA220N055T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 220A TO-263		Original	PDF
IXTA220N055T7		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 220A TO-263-7		Original	PDF

IXTA220N055T Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXTA220N055T Abstract: IXTP220N055T 220N055T Text: Preliminary Technical Information IXTA220N055T IXTP220N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 220 A ≤ 4.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	IXTA220N055T IXTP220N055T O-263 O-220) 220N055T IXTA220N055T IXTP220N055T 220N055T	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA220N055T IXTP220N055T VDSS ID25 RDS on = 55 V = 220 A ≤ 4.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	IXTA220N055T IXTP220N055T O-263 220N055T	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA220N055T7 RDS on = 55 V = 220 A ≤ 4.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	IXTA220N055T7 O-263 220N055T	PDF
IXTA220N055T7 Abstract: No abstract text available Text: Preliminary Technical Information IXTA220N055T7 TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 220 A ≤ 4.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	IXTA220N055T7 O-263 220N055T IXTA220N055T7	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
1262-33 Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.	Original	5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T	PDF