Untitled
Abstract: No abstract text available
Text: BGA622 1.4 - 6 GHz SiGe LNA ES: NOW WS DS M 1 26.04.2002 Page 1 Vcc = 2.7V, Symbol IS21I2 NF P-1dB IIP3 Id MP: 05/02 Features SOT343 Applications 50Ω matched - no external components required NE W MMIC UMTS / CDMA • GSM / TDMA / EDGE • GPS / ISM • Bluetooth
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BGA622
IS21I2
OT343
14GHz
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721f
Abstract: ci 7445 TLP421 TLP 7445 TLP521 TLP521 SOP tlp421-4 TA4011FU TA4016AFE TLP621
Text: 東芝半導体情報誌アイ 2000 1･2月号 発行/（株）東芝 セミコンダクター社 電子デバイス営業事業部 営業企画部 TEL. 03-3457-3453 FAX. 03-5444-9431 eye 2000年1･2 u c to r 月号 d n co i Vo m l.9 Se 1 CONTENTS INFORMATION
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600VIGBT
500mA/ch
200mA/ch
50mA/ch
TD62382AFN
TD62083AFN/084AFN
TD62304AFN/305AFN
TD62503FN/504FN
33VCE:
721f
ci 7445
TLP421
TLP 7445
TLP521
TLP521 SOP
tlp421-4
TA4011FU
TA4016AFE
TLP621
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rx 3152
Abstract: A1306 2Q394 IC LP7 A-1306 500R BFP405 BGC405 Q62702-G0091 RX82 equivalent
Text: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe
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BGC405
BFP405
SCT598-Package
VPW05982
Q62702-G0091
SCT598
BGC405
s000E
rx 3152
A1306
2Q394
IC LP7
A-1306
500R
BFP405
Q62702-G0091
RX82 equivalent
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IC AT 6884
Abstract: T79 SOT 23
Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 23 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm
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OT-343
NE662M04
NE662M04
09e-12
22e-9
001e-12
IC AT 6884
T79 SOT 23
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Untitled
Abstract: No abstract text available
Text: SIEMENS Si-M M IC-Am plifier BGA 425 in SIEGET 25-Technologie Preliminary data • Multifunctional ease. 50 Cl block LNA / MIX • Unconditionally stable • Gain IS2-|I2 = 18.5 dB at 1.8 GHz (appl.1) gain IS21I2 = 22 dB at 1.8 GHz (appl.2) /p3out = +7 dBm at 1 8 GHz ( ^D=3V,/D=9.5mA)
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25-Technologie
IS21I2
OT-363
de/Semiconductor/products/35/35
235b05
fl535b05
015252t)
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Untitled
Abstract: No abstract text available
Text: SIE M E N S BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 16 dB typical Gain at 1.0 GH2 12 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidth: DC to 1.2 GHz Plastic Package Type Marking Ordering Code 8-mm taped
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BGA318
Q62702-G0043
OT143
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Untitled
Abstract: No abstract text available
Text: Thai H E W L E T T mLKM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0520 Features • C ascadable 5 0 Q Gain B lock • High O utput Power: +23 dBm Typical Pj dB at 1.0 GHz • Low D istortion : 33 dBm Typical IP3 at 1.0 GHz
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MSA-0520
MSA-0520
5965-9582E
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Untitled
Abstract: No abstract text available
Text: data sheet O avantek MGA-66100 2-6 GHz Cascadable GaAs MMIC Amplifier December, 1989 Avantek Chip Outline Features • • • • Cascadable 50 Q Gain Block Broadband Performance: 2-6 GHz 12.5 dB typical Gain + 1.0 dB Gain Flatness 13.0 dBm Pi dB Single Supply Bias
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MGA-66100
MGA-66100
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Untitled
Abstract: No abstract text available
Text: » i emveir P roduct S p ec ifica tio n s M a y 1994 1 CFC0301 Series Medium Power GaAs FETs of 2 Features □ High Gain □ +23 dBm Power Output □ Ion Implanted Material □ 100 Mil Stripline Flange Package C Package Diagram 1.6 *0.1 DIA 0.6 - 1.0 2.5 MAX
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CFC0301
CFC0301-P
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2493 transistor
Abstract: marking 9721 IC 7109
Text: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB at f = 1 GHz TT irrV » fio in JJlg ll V ^ U lll
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MT3S04AT
IS21I2
2493 transistor
marking 9721
IC 7109
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FSX51WF
Abstract: FSX51
Text: FSX51WF General Purpose GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 12 V Gate-Source Voltage Vg S -5 V Total Power Dissipation Ptot 1 .0 w Storage Temperature T stg -65 t o +175
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FSX51WF
2000Q.
IS21I2
FSX51WF
FSX51
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Untitled
Abstract: No abstract text available
Text: 1 W h ß tHEWLETT* miti» P AC KA R D 3.0 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-54063 Features Surface Mount Package SOT-363 SC-70 Applications Pin Connections and Package Marking • • • • • • Ultra-Miniature Package Single 5 V Supply (29 mA)
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INA-54063
OT-363
SC-70)
OT-363
OT-143
5965-5364E
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Untitled
Abstract: No abstract text available
Text: N AUER P H IL IP S /D IS C R E T E bTE D bb53R31 DD325T1 257 H A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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bb53R31
DD325T1
OM2083/86
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4447 surface mounted diode
Abstract: MGA-82563
Text: Who m L'tiI M HEWLETT PACKARD 0 .1 -6 GHz 3 V, 17 dBm Amplifier Technical Data MGA-82563 F ea tu res • +17.3 dBm Px dB at 2.0 GHz Surface M ount Package SOT-363 S C -70 +20 dBm Psat at 2.0 GHz • Single +3V Supply • 2.2 dB N oise Figure at 2.0 GHz • 13.2 dB Gain at 2.0 GHz
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MGA-82563
OT-363
MGA-82563
OT-363
OT-143
ex004
5965-1329E
5965-9685E
4447 surface mounted diode
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Untitled
Abstract: No abstract text available
Text: What HEWLETT mL'HMPACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1104 Features • High Dynamic Range Cascadable 50 Q. or 75 Q Gain Block • 3 dB Bandwidth: 50 MHz to 1.3 GHz • 17.5 dBm Typical Pj ^ at 0.5 GHz • 12 dB Typical 50 Q Gain at
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MSA-1104
MSA-1104
5965-9556E
44475A4
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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PDF
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vHF amplifier module
Abstract: philips if catv amplifier wideband amplifier philips ferrite material specifications
Text: N AUER PHILIPS/DISCRETE b'ïE D ^ 5 3 ^ 3 1 DDBSS'ìl 257 H A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q83/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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OM2Q83/86
vHF amplifier module
philips if catv amplifier
wideband amplifier
philips ferrite material specifications
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MSA806
Abstract: msa80 philips Q 522 philips if catv amplifier
Text: N AMER PHI LI PS/DISCRE TE b^E D • bbSB^l D0325bb GT1 ■ APX P hilips S em iconductors Prelim inary specification Wideband amplifier module OM2082/60 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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bb53131
D0325bb
OM2082/60
MSA34o
MSA806
msa80
philips Q 522
philips if catv amplifier
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data • Cascadable 50 Q-gain block • Unconditionally stable • Gain IS2 1 12 = 13 dB at 1.8 GHz /P3out = +9 dBm at 1.8 GHz \/D = 3 V, /D = typ. 6.4 mA • Noise figure NF= 2.2 dB at 1.8 GHz
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25-Technologie
Q62702-G0057
OT-343
015551b
IS21I2
D1EEE17
fl23Sb05
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Untitled
Abstract: No abstract text available
Text: BFG 19S SIEMENS NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers In antenna and telecommunications system s up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -typ e available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!
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BFG19S
Q62702-F1359
OT-223
Uni-0-01
fl235bD5
D1517SÃ
IS21I2
900MHz
aS35bD5
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b?254 OOlSOfi? 3 I noTb r - 3 \~ J .$ SE M IC O N D U C T O R TECHNICAL DATA MRFQ19 The RF Line DIE SOURCE SAME AS BFQ19 N P N S ilic o n H ig h F re q u e n cy T r a n s isto r iC m ISO mA SURFACE MOUNT HIGH FREQUENCY
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MRFQ19
IS21I2
BFQ19
7S1-03,
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transistor MRF 254
Abstract: MRF561 Motorola transistors M 724 MRF560 724 motorola NPN Transistor R/High frequency MRF transistor case 317-01 317A-01 High frequency MRF transistor k 724
Text: MOTOROLA SC -CXSTRS/R 34 F> DËJfa3fci7SS4 □D41Dflb b | _ T ' l t - t l MRF560 MRF561 MRF562 MRF563 MRFC592 The R F Line A d v a n c e Information NPN SILICON HIGH FREQUENCY TRANSISTORS The MRF560 series transistors use the same state-of-the art microwave transistor chip which features fine-line geometry, ionimplanted arsenic emitters and gold top metalization. These tran
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D41Dflb
MRF560
MRF561
MRF562
MRF563
MRFC592
MRF560
MRF561
transistor MRF 254
Motorola transistors M 724
724 motorola NPN Transistor
R/High frequency MRF transistor
case 317-01
317A-01
High frequency MRF transistor
k 724
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor . . . designed for UHF linear and large-signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts Minimum Gain = 8.0 dB
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0 258 007 033
Abstract: Transistor 2274
Text: MPS536 CASE 29-04, STYLE 2 TO-92 TO-226AA M A XIM U M RATINGS Symbol MPS536 Unit Collector-Emitter Voltage VCEO -1 0 Vdc Collector-Base Voltage VCBO -1 5 Vdc Vdc Rating Emitter-Base Voltage HIGH FREQUENCY TRANSISTOR Ve b o -4 .5 Collector Current — Continuous
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MPS536
O-226AA)
MPS536
0 258 007 033
Transistor 2274
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