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Vishay Siliconix IRFP048PBF MOSFET N-CH 60V 70A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFP048PBF	Tube	392		1	1 $5.61 10 $5.61 100 $5.61 1000 $2.13762 10000 $2.13762	Buy Now
Infineon Technologies AG IRFP048N MOSFET N-CH 55V 64A TO247AC
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DigiKey	IRFP048N	Bag			25	1 - 10 - 100 $4.0904 1000 $4.0904 10000 $4.0904	Buy Now
Infineon Technologies AG IRFP048NPBF MOSFET N-CH 55V 64A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFP048NPBF	Bag				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	IRFP048NPBF		34,892		469	1 - 10 - 100 - 1000 $0.7231 10000 $0.7231	Buy Now
Rochester Electronics	IRFP048NPBF		34,892		1	1 $0.6806 10 $0.6806 100 $0.6398 1000 $0.5785 10000 $0.5785	Buy Now
Rochester Electronics LLC IRFP048NPBF HEXFET POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFP048NPBF	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	IRFP048NPBF	Bulk			424	1 - 10 - 100 - 1000 $0.71 10000 $0.71	Buy Now
Vishay Siliconix IRFP048RPBF MOSFET N-CH 60V 70A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFP048RPBF	Tube			500	1 - 10 - 100 - 1000 $2.35998 10000 $2.35998	Buy Now
Bristol Electronics	IRFP048RPBF		50			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRFP048RPBF		40			1 $3.132 10 $3.132 100 $2.088 1000 $2.088 10000 $2.088	Buy Now

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IRFP048 Datasheets (18)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFP048	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFP048	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRFP048	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFP048	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFP048	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFP048N	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRFP048N	International Rectifier	55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; A IRFP048N with Standard Packaging	Original	PDF
IRFP048N	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRFP048N	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFP048N	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 55V, 62A, Pkg Style TO-247AC	Scan	PDF
IRFP048NPBF	International Rectifier		Original	PDF
IRFP048NPBF	International Rectifier	55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP048N with Lead Free Packaging	Original	PDF
IRFP048PBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 70A TO-247AC	Original	PDF
IRFP048R	International Rectifier	60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package	Original	PDF

IRFP048R	International Rectifier	60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package	Scan	PDF
IRFP048R	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFP048RPBF	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRFP048RPBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 70A TO-247AC	Original	PDF

IRFP048 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole	Original	PDF	IRFP048, SiHFP048 2002/95/EC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
IRFP048R Abstract: 7052A Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration • Isolated Central Mounting Hole 0.018 COMPLIANT • Ease of Paralleling	Original	PDF	IRFP048R, SiHFP048R O-247 O-220 O-218 18-Jul-08 IRFP048R 7052A
diode R 360 BL Abstract: IRFP048N TO-247AC Package IRFZ48N Text: PD - 9.1409A IRFP048N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	IRFP048N O-247 diode R 360 BL IRFP048N TO-247AC Package IRFZ48N
IRFP048R Abstract: No abstract text available Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration • Isolated Central Mounting Hole 0.018 COMPLIANT • Ease of Paralleling	Original	PDF	IRFP048R, SiHFP048R O-247 O-220 O-218 18-Jul-08 IRFP048R
diode code ae Abstract: 035H IRFPE30 632 diode Text: PD- 95502 IRFP048RPbF Lead-Free Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Max. ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 52 IDM 290 Pulsed Drain Current PD @TC = 25°C Power Dissipation VGS EAS	Original	PDF	IRFP048RPbF O-247AC IRFPE30 diode code ae 035H IRFPE30 632 diode
TO-247AC Package Abstract: IRFPE30 035H TO247AC Text: PD- 95422 IRFP048NPbF Lead-Free 1 IRFP048NPbF 2 IRFP048NPbF TO-247AC Package Outline Dimensions are shown in millimeters inches TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H"	Original	PDF	IRFP048NPbF O-247AC IRFPE30 TO-247AC Package IRFPE30 035H TO247AC
Untitled Abstract: No abstract text available Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration	Original	PDF	IRFP048R, SiHFP048R 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration RoHS* • 175 °C Operating Temperature COMPLIANT • Ease of Paralleling	Original	PDF	IRFP048, SiHFP048 O-247 O-220 12-Mar-07
Untitled Abstract: No abstract text available Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration	Original	PDF	IRFP048R, SiHFP048R 2002/95/EC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
Untitled Abstract: No abstract text available Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole	Original	PDF	IRFP048, SiHFP048 2002/95/EC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
TO247AC Abstract: IRFz48N MOSFET DM marking code equivalent IRFZ48N IRFP048N IRFPE30 IRFZ48N st l 9302 Text: PD 9.1409 IRFP048N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G ID = 62A S Description Fifth Generation HEXFETs from International Rectifier	Original	PDF	IRFP048N O-247 TO247AC IRFz48N MOSFET DM marking code equivalent IRFZ48N IRFP048N IRFPE30 IRFZ48N st l 9302
14.5M 1982 Abstract: irf 9246 IRF1010E TO-247AC Package IRF 1010 irf 44 n Text: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) NOT ES : 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 )	Original	PDF	IRFP048N O-247AC O-247-A 14.5M 1982 irf 9246 IRF1010E TO-247AC Package IRF 1010 irf 44 n
Untitled Abstract: No abstract text available Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole	Original	PDF	IRFP048, SiHFP048 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: PD- 95502 IRFP048RPbF Lead-Free Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Max. ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 52 IDM 290 Pulsed Drain Current PD @TC = 25°C Power Dissipation VGS EAS Units	Original	PDF	IRFP048RPbF 08-Mar-07

IRFP048 Abstract: No abstract text available Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration RoHS* • 175 °C Operating Temperature COMPLIANT • Ease of Paralleling	Original	PDF	IRFP048, SiHFP048 O-247 O-247 O-220 O-218 18-Jul-08 IRFP048
Untitled Abstract: No abstract text available Text: PD - 94464 IRFP048R 06/04/02 IRFP048R IRFP048R IRFP048R IRFP048R IRFP048R	Original	PDF	IRFP048R
Untitled Abstract: No abstract text available Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration	Original	PDF	IRFP048R, SiHFP048R 2002/95/EC O-247AC O-220AB 11-Mar-11
035H Abstract: IRFPE30 Text: PD- 95422 IRFP048NPbF Lead-Free www.irf.com 1 06/16/04 IRFP048NPbF 2 www.irf.com IRFP048NPbF www.irf.com 3 IRFP048NPbF 4 www.irf.com IRFP048NPbF www.irf.com 5 IRFP048NPbF 6 www.irf.com IRFP048NPbF www.irf.com 7 IRFP048NPbF TO-247AC Package Outline Dimensions are shown in millimeters inches	Original	PDF	IRFP048NPbF O-247AC 035H IRFPE30
IRFz48N MOSFET Abstract: IRFP048N IRFZ48N IRFP048 IRF 024 Text: PD - 9.1409A IRFP048N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	IRFP048N O-247 IRFz48N MOSFET IRFP048N IRFZ48N IRFP048 IRF 024
Untitled Abstract: No abstract text available Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole	Original	PDF	IRFP048, SiHFP048 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration	Original	PDF	IRFP048R, SiHFP048R 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
lg diode 923 Abstract: IRFP048 LG 72A Text: PD-9.820 International S Rectifier IRFP048 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Isolated Central Mounting Hole 175°C Operating Temperature Ease of Paralleling Simple Drive Requirements V dss = 6 0 V R DS on = 0 - 0 1 8 0 lD = 7 0 *A	OCR Scan	PDF	IRFP048 O-247 T0-220 O-218 lg diode 923 IRFP048 LG 72A
T0247AC Abstract: No abstract text available Text: kitemational PD 9.1409 SRectifier IRFP048N PRELIMINARY HEXFET Power M OSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^DS on = 0.016Î2 lD = 62A Description Fifth Generation HEXFETs from International Rectifier	OCR Scan	PDF	IRFP048N O-247 61350BadHomburgTel: T0247AC
c366 Abstract: C369 c368 IRFP048N Text: PD - 9.1409A International IQ R Rectifier IRFP048N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 55V ^D S o n = 0.016Q lD = 64A Description	OCR Scan	PDF	IRFP048N O-247 C-368 C-369 c366 C369 c368 IRFP048N

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IRFP048 Datasheets (18)

IRFP048 Datasheets Context Search

Untitled

IRFP048R

diode R 360 BL

IRFP048R

diode code ae

TO-247AC Package

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Untitled

Untitled

TO247AC

14.5M 1982

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Untitled

IRFP048

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035H

IRFz48N MOSFET

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lg diode 923

T0247AC

c366