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International Rectifier IRFF120 Trans MOSFET N-CH 100V 6A 3-Pin TO-39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Arrow Electronics	IRFF120		1,773	25 Weeks	1	1 - 10 $13.4 100 $13.4 1000 $13.4 10000 $13.4	Buy Now
Quest Components	IRFF120		1			1 $12.0501 10 $12.0501 100 $12.0501 1000 $12.0501 10000 $12.0501	Buy Now
New Jersey Semiconductor Products, Inc. IRFF123
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF123		4,733		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
HARTING Technology Group IRFF123
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF123		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Jersey Semiconductor Products, Inc. IRFF120
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF120		915		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
New Jersey Semiconductor Products, Inc. IRFF121
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF121		350		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now

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IRFF12 Datasheets (71)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFF120	International Rectifier	HEXFET Transistor	Original	PDF
IRFF120	Intersil	6.0A, 100V, 0.300 ?, N-Channel Power MOSFET	Original	PDF
IRFF120	Semelab	N-Channel Power MOSFET Enhancement MODE	Original	PDF
IRFF120	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRFF120	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A.	Scan	PDF
IRFF120	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFF120	International Rectifier	TO-39 Package N-Channel HEXFET	Scan	PDF
IRFF120	International Rectifier	N-Channel Power MOSFETs	Scan	PDF
IRFF120	International Rectifier	TO-39 N-Channel HEXFET Power MOSFETs	Scan	PDF
IRFF120	Motorola	Switchmode Datasheet	Scan	PDF
IRFF120	Motorola	European Master Selection Guide 1986	Scan	PDF
IRFF120	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF
IRFF120	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFF120	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

IRFF120	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRFF120	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFF120	Unknown	FET Data Book	Scan	PDF
IRFF120	Siliconix	MOSPOWER Design Data Book 1983	Scan	PDF
IRFF120	Vishay Siliconix	Shortform Siliconix Datasheet	Short Form	PDF
IRFF120R	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF

IRFF12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRFF120 Data Sheet Title FF1 bt 0A, 0V, 00 m, March 1999 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	PDF	IRFF120 IRFF120 O-205AF TB334,
100V 60A Mosfet Abstract: 50V 60A MOSFET 2N6788 IRFF120 100V 60A Diode Text: 2N6788 IRFF120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • AVALANCHE ENERGY RATING	Original	PDF	2N6788 IRFF120 O-205AF) 100V 60A Mosfet 50V 60A MOSFET 2N6788 IRFF120 100V 60A Diode
Untitled Abstract: No abstract text available Text: IRFF120 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.	Original	PDF	IRFF120 O205AF) 11-Oct-02
Untitled Abstract: No abstract text available Text: IRFF120, IRFF121, IRFF122, IRFF123 S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	PDF	IRFF120, IRFF121, IRFF122, IRFF123 TA09594.
IRFF120 Abstract: JANTX2N6788 JANTXV2N6788 n-channel, 70v, 60a 4.5V to 100v input regulator Text: PD-90426D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number IRFF120 BVDSS RDS(on) 100V 0.30Ω ID 6.0A T0-39 ® The HEXFET technology is the key to International	Original	PDF	PD-90426D O-205AF) IRFF120 JANTX2N6788 JANTXV2N6788 MIL-PRF-19500/555 T0-39 O-205AF IRFF120 JANTX2N6788 JANTXV2N6788 n-channel, 70v, 60a 4.5V to 100v input regulator
IR 60A, 100V Mosfet Abstract: IRFF120 90426C JANTX2N6788 JANTXV2N6788 100V 60A Diode Text: PD - 90426C IRFF120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF120 BVDSS 100V RDS(on) 0.30Ω ID 6.0A  The HEXFET technology is the key to International	Original	PDF	90426C IRFF120 JANTX2N6788 JANTXV2N6788 MIL-PRF-19500/555 O-205AF) IR 60A, 100V Mosfet IRFF120 90426C JANTX2N6788 JANTXV2N6788 100V 60A Diode
IRFF120 Abstract: TB334 Text: IRFF120 Data Sheet January 2002 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features • 6.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	PDF	IRFF120 IRFF120 TB334
Untitled Abstract: No abstract text available Text: J loancti, Line. J.E.11ZU £s TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFF120 Features 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 6.0A, 100V This N-Channel enhancement mode silicon gate power field	Original	PDF	IRFF120
Untitled Abstract: No abstract text available Text: 2N6788 IRFF120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • AVALANCHE ENERGY RATING	Original	PDF	2N6788 IRFF120 O-205AF)
Untitled Abstract: No abstract text available Text: PD-90426D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number IRFF120 BVDSS RDS(on) 100V 0.30Ω ID 6.0A T0-39 ® The HEXFET technology is the key to International	Original	PDF	PD-90426D O-205AF) IRFF120 JANTX2N6788 JANTXV2N6788 MIL-PRF-19500/555 T0-39 O-205AF
IRFF120 Abstract: TB334 Text: IRFF120 Data Sheet March 1999 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET 1563.3 Features • 6.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	PDF	IRFF120 IRFF120 TB334
Untitled Abstract: No abstract text available Text: IRFF120R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)24# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55õ	Original	PDF	IRFF120R
IRFF122 Abstract: IRFF123 Text: IRFF122,123 F [ f F 5.0 AMPERES 100, 60 VOLTS Rd S ON = 0.4 n HELD EFFECT POWER TRANSISTOR Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	PDF	IRFIF122 IRFF122^ IRFF123-Â IRFF122 IRFF123
Untitled Abstract: No abstract text available Text: IRFF120, IRFF121, IRFF122, IRFF123 HARRIS S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V • High Input Im pedance These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRFF120, IRFF121, IRFF122, IRFF123 TA09594. RFF122, IRFF123

SFN106B9 Abstract: DS0026 IRFF121 3909 Text: b l D E^ f lf fl3bfifciD5 l3 t .a k 0 5 bl ‘ DE •SOLITRÔN DEVICES INC B o l i t r D E V I C E S , o n T I T \| . s f n T T- 3 9 - 0 9 i o 6 B 9 IIM C . POWER MOS DEVICE 60V/6A N Channel, TO-39 Package, IRFF121 Equivalent The new Solitron Power MOS technology	OCR Scan	PDF	T-39-09 SFN106B9 IRFF121 HP214A /IF/450V SFN106B9 DS0026 3909
IRFF121 Abstract: IRFF120 IRFF12 Text: FIT IRFF120’121 6.0 AMPERES 100, 60 VOLTS RDS(ON = 0.3 n HELD EFFECT POWER TRANSISTOR Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	PDF	100ms IRFF12 IRFF121 IRFF120
OA 161 diode Abstract: IRFF120 IRFF121 IRFF122 IRFF123 3ws7 Text: Standard Power MOSFETs IRFF120, IRFF121, IRFF122, IRFF123 File N u m b e r 1563 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 5.0A and 6.0A, 60V-100V rDs on = 0.30 Q and 0.40 O Features:	OCR Scan	PDF	IRFF120, IRFF121, IRFF122, IRFF123 0V-100V IRFF122 IRFF123 OA 161 diode IRFF120 IRFF121 3ws7
sfn106a9 Abstract: No abstract text available Text: 8368602 § SOL ITRQN l i t r 0 n - D E V IC E S , INC. D E V IC ES INC kl PE [ f l 3 b f l i3D5 □□□□350 ^ _ \| T-39-09 SFN106A9 POWER MOS DEVICE 100V/6A N Channel, TO-39 Package, IRFF120 Equivalent The new Solitron Power MOS technology combines the efficient	OCR Scan	PDF	T-39-09 00V/6A) IRFF120 SFN106A9 F/450V HP214A sfn106a9
I22R Abstract: IRFF122R IRFF120R IRFF121R IRFF123R IRFFI22R Text: Rugged Power MOSFETs_ IRFF120R, IRFF121R, IRFFI22R, IRFF123R File Num ber 2023 Avalanche Energy Rated N-Channel Power MOSFETs 5.0A and 6.0A, 60V-100V ib s o n = 0.300 and 0.400 N-CHANNEL ENH ANCEM ENT M ODE Feature«: • Single pulse avalanche energy rated	OCR Scan	PDF	IRFF120R, IRFF121R, IRFF123R 0V-100V IRFF122R IRFF123R 92CS-42S60 I22R IRFF120R IRFF121R IRFFI22R
mosfet 4430 Abstract: FF121R 4431 mosfet Text: 23 HARRIS IRFF12 0 /1 2 1/12 2/123 IRFF120R/121 R /122R/123R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features T O -2 0 5 A F • 5.0A and 6.0A , 8 0 V - 1 0 0V • rDS on = 0.30S1 and 0 .4 0 ii • Single Pulse Avalanche Energy R ated*	OCR Scan	PDF	IRFF12 IRFF120R/121 /122R/123R IRFF120, IRFF121, IRFF122, IRFF123 IRFF120R, IRFF121R, IRFF122R, mosfet 4430 FF121R 4431 mosfet
1RFF120 Abstract: No abstract text available Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRFF120 IRFF123 Advance Information S m all-S ig nal Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate TM O S N-CHANNEL TMOS POWER FETs rDS on = 0-3 OHM 100 VOLTS rDS(on) = 0.4 OHM 60 VOLTS . . . desig n ed fo r lo w vo ltag e , high speed p o w e r sw itch in g	OCR Scan	PDF	IRFF120 IRFF123 IRFF123 1RFF120
F111 Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25 Text: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR	OCR Scan	PDF	1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 LM3661TL-1.25
Untitled Abstract: No abstract text available Text: International ï» ! Rectifier HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number V o s Drain Source Voltage Volts IRFF014 IRFF034 60 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 &DS(on) On-State Resistance (Ohms) I q Continuous Drain Current	OCR Scan	PDF	IRFF014 IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 IRFF112 2N6782
IRFF122 Abstract: ANA1-20 Text: 8 368602 SOL ITRON DEVICES INC hi fl3bflb DS DD0D2flfl fc, \| S o litro n _ T-39-09 SFN10GC9 D E V I C E S , IIMC. POWER MOS DEVICE 1 0 0 V /5 A N Channel, TO-39 Package, IRFF122 Equivalent The new Solitron Power MOS technology combines the	OCR Scan	PDF	T-39-09 00V/5A) IRFF122 HP214A ANA1-20

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IRFF12 Search Results

IRFF12 Price and Stock

International Rectifier IRFF120

New Jersey Semiconductor Products, Inc. IRFF123

HARTING Technology Group IRFF123

New Jersey Semiconductor Products, Inc. IRFF120

New Jersey Semiconductor Products, Inc. IRFF121

IRFF12 Datasheets (71)

IRFF12 Datasheets Context Search

Untitled

100V 60A Mosfet

Untitled

Untitled

IRFF120

IR 60A, 100V Mosfet

IRFF120

Untitled

Untitled

Untitled

IRFF120

Untitled

IRFF122

Untitled

SFN106B9

IRFF121

OA 161 diode

sfn106a9

I22R

mosfet 4430

1RFF120

F111

Untitled

IRFF122