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    IRFD12 Price and Stock

    Vishay Siliconix IRFD123PBF

    MOSFET N-CH 100V 1.3A 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD123PBF Bulk 3,274 1
    • 1 $1.93
    • 10 $1.23
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    • 1000 $0.60233
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    Vishay Siliconix IRFD120

    MOSFET N-CH 100V 1.3A 4DIP
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    Bristol Electronics IRFD120 95 3
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    • 10 $2.0475
    • 100 $1.2797
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    Quest Components IRFD120 200
    • 1 $0.63
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    • 100 $0.42
    • 1000 $0.294
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    IRFD120 40
    • 1 $1.0435
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    ComSIT USA IRFD120 2,407
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    Rochester Electronics LLC IRFD121

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey IRFD121 Bulk 666
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    Rochester Electronics LLC IRFD123

    MOSFET N-CH 100V 1.3A 4DIP
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    DigiKey IRFD123 Tube 346
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    Vishay Siliconix IRFD120PBF

    MOSFET N-CH 100V 1.3A 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD120PBF Bulk 2,500
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    RS IRFD120PBF Bulk 2,500
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    ComSIT USA IRFD120PBF 730
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    Component Electronics, Inc IRFD120PBF 92
    • 1 $1.54
    • 10 $1.54
    • 100 $1.15
    • 1000 $1
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    Find more IRFD12 price and stock on Findchips.com

    IRFD12 Datasheets (79)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD120 Fairchild Semiconductor N-Channel Power MOSFET Original PDF
    IRFD120 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRFD120 Intersil 1.3A, 100V, 0.300 ?, N-Channel Power MOSFET Original PDF
    IRFD120 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD120 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 1.3A 4-DIP Original PDF
    IRFD120 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD120 Harris Semiconductor (IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs Scan PDF
    IRFD120 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD120 International Rectifier Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A) Scan PDF
    IRFD120 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFD120 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFD120 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFD120 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFD120 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 100V, 1.3A, Pkg style HEXDIP Scan PDF
    IRFD120 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD120 Motorola (IRFD123) TMOS Field Effect Transistor / Dual In-Line Package Scan PDF
    IRFD120 Motorola Switchmode Datasheet Scan PDF
    IRFD120 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD120 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD120 Unknown FET Data Book Scan PDF

    IRFD12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Power MOSFET in a HEXDIP package

    Abstract: TA17401 IRFD120 TB334
    Text: IRFD120 Data Sheet July 1999 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 1.3A, 100V • rDS ON = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		PDF IRFD120 TB334 TA17401. Power MOSFET in a HEXDIP package TA17401 IRFD120 TB334

    IRFD120PBF

    Abstract: IRFD120
    Text: PD- 95928 IRFD120PbF • Lead-Free www.irf.com 1 10/27/04 IRFD120PbF 2 www.irf.com IRFD120PbF www.irf.com 3 IRFD120PbF 4 www.irf.com IRFD120PbF www.irf.com 5 IRFD120PbF 6 www.irf.com IRFD120PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations


    Original     		PDF IRFD120PbF IRFD120 IRFD120PBF IRFD120

    Untitled

    Abstract: No abstract text available
    Text: IRFD122 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)1.1# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.4# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFD122

    SiHFD123

    Abstract: No abstract text available
    Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original     		PDF IRFD123, SiHFD123 12-Mar-07

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95927 IRFD110PbF • Lead-Free 1 IRFD110PbF 2 IRFD110PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE


    Original     		PDF IRFD110PbF IRFD120 IRFD120

    Untitled

    Abstract: No abstract text available
    Text: IRFD123_RC, SiHFD123_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFD123 SiHFD123 AN609, CONFIGURA5-Oct-10 3013m 6764u 6401m 9270m

    Untitled

    Abstract: No abstract text available
    Text: IRFD123 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)1.1# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.4# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFD123

    IRFD120

    Abstract: No abstract text available
    Text: IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original     		PDF IRFD120, SiHFD120 18-Jul-08 IRFD120

    F7101

    Abstract: international rectifier code 807D1 IRF530S IRF7101 IRF7807D1 IRFD120 MS-012AA 8024 digit 263A
    Text: HD-1 HEXDIP THIS IS AN IRFD120 INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFD120 XXXX LAST FOUR DIGITS OF ASSEMBLY LOT CODE DATE CODE (YYWW) YY = YEAR WW = WEEK D 2 Pak (TO-263A) THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L"


    Original     		PDF IRFD120 O-263A) IRF530S MS-012AA) IRF7101 F7101 IRF7807D1 807D1 F7101 international rectifier code 807D1 IRF7101 IRF7807D1 IRFD120 MS-012AA 8024 digit 263A

    IRFD120

    Abstract: HexDIP Package HEXDIP
    Text: PD- 95920 IRFD014PbF • Lead-Free 1 IRFD014PbF 2 IRFD014PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE


    Original     		PDF IRFD014PbF IRFD120 IRFD120 HexDIP Package HEXDIP

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95918 IRFD9220PbF • Lead-Free 1 IRFD9220PbF 2 IRFD9220PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE


    Original     		PDF IRFD9220PbF IRFD120 IRFD120

    90161

    Abstract: No abstract text available
    Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original     		PDF IRFD123, SiHFD123 2002/95/EC 11-Mar-11 90161

    SiHFD123

    Abstract: No abstract text available
    Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original     		PDF IRFD123, SiHFD123 18-Jul-08

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95919 IRFD9120PbF • Lead-Free 1 IRFD9120PbF 2 IRFD9120PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE


    Original     		PDF IRFD9120PbF IRFD120 IRFD120

    385H

    Abstract: IRFD120 dual mosfet marking 506
    Text: International S Rectifier PD-9.385H IRFD120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS= 100V R DS on =


    OCR Scan     		PDF IRFD120 385H IRFD120 dual mosfet marking 506

    IRF0110

    Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
    Text: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123


    OCR Scan     		PDF IRFD015 IRFD014 IRFD025 IRFD024 M0-001AN IRFD113 IRFD123 IRF0110 IRF0120 IRFD213 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD1Z0 IRFD9014 IRFU121 irfu310

    IRFD120

    Abstract: irfd123 IRF0123
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD120 TMOS Field Effect Transistor Dual In-Line Package IR F D 1 2 3 N-Channel Enhancement Mode TM O S FET TR A N S IS TO R S FE T DIP Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline


    OCR Scan     		PDF IRFD120 IRFD123 IRFD123 IRF0123

    1RFD123

    Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
    Text: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFD120/121/122/123 12OR/121R/122R/123R IRFD120, IRFD121, IRFD122, IRFD123 IRFD120R, IRFD121R, IRFD122R, IRFD123R 1RFD123 IRFD 123R fd120 IRFD 120 IRFD 123

    1RFD120

    Abstract: TRANSISTOR IRFD120
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD120 IRFD123 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode • Ideal for Peripheral Control Applications • Intermediate 1 Watt Power Capability • Standard DIP Outline TMOS FET TRANSISTORS


    OCR Scan     		PDF IRFD120 IRFD123 1RFD120 1RFD120 TRANSISTOR IRFD120

    IRFD123

    Abstract: D120 IRFD120 if1070 IRFD 120 IRFD 123
    Text: Tem ic IRFD120/123 Siliconix N-Channel Enhancement-Mode Transistors Product Summary Part Num ber V BR DSS 00 rDS(on) (Ö ) I d (A) IRFD120 100 0.3 1.3 IRFD123 60 0.4 1.1 D D Top View 6 s N-Channel M OSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF IRFD120/123 IRFD120 IRFD123 IK1D123 -55DC P-36852â 25C--7// D120 if1070 IRFD 120 IRFD 123

    IRF0123

    Abstract: IRFD122 IRFD123
    Text: [F FIELD EFFECT POWER TRANSISTOR ]CZ T h is series of N -C h a n n e i E n h a n ce m e n t-m o d e Pow er M O S F E T s utilizes G E 's advanced Power D M O S technology to achieve low on-reslstance with excellent device rugged­ ness and reliability. IRFD122.123


    OCR Scan     		PDF IRFD122 IRF0123 IRFD123

    IRFD123

    Abstract: IRF0123 100MS IRFD122 transistor 123 DL
    Text: r a ? M ^ D lM ! S @ F IE F IRFD122.123 RELD EFFECT POWER TRANSISTOR 1.1 AMPERES 100,60 VOLTS RPS ON = 0-4 A This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF 100MS 100ms- IRFD12 IRFD123 IRF0123 100MS IRFD122 transistor 123 DL

    irf0014

    Abstract: IRF09014 IRF0220 IRF0024 IRF09120 INTERNATIONAL RECTIFIER 9439 IRFD110 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024
    Text: PLASTIC PACKAGE HEXFETs ~ INTERNATIONAL SbE RECT IFIER D INTERNATIONAL r e c t i f i e r IOR 4äSSM55 0010554 1 • HEXDIpTM Package N-CHANNEL Typos Vos R d S ON (max) Ip cont >0M Pd TC - 25°C pulsed max A W Sì IRFD024 ' IRFD02S IRF0014 IRFQ015 60 IRFD123


    OCR Scan     		PDF QQ1Q554 IRF0024 IRFD025 IRF0014 IRF0015 IRFD123 IRF0113 IRFD120 IRFD110 IRF0223 IRF09014 IRF0220 IRF09120 INTERNATIONAL RECTIFIER 9439 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024

    Untitled

    Abstract: No abstract text available
    Text: 4 0 5 5 4 5 2 0015GB2 1Ô4 » I N R International SËr]Rectifier IRFD120 HEXFET Power MOSFET • • • • • • • PD-9.385H INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature


    OCR Scan     		PDF 0015GB2 IRFD120 5S452 QG15027