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Vishay Intertechnologies IRFC220B MOSFET N-CHANNEL 200V - Bulk (Alt: IRFC220B)
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Avnet Americas	IRFC220B	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies IRFC220BV MOSFET N-CHANNEL 200V - Bulk (Alt: IRFC220BV)
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Avnet Americas	IRFC220BV	Bulk			9,695	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRFC220D VIR IRFC220D
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ES Components	IRFC220D					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Semiconductors IRFC220D VS IRFC220D MOSFET
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ES Components	IRFC220D					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRFC220B VIR IRFC220B DIE IN WAFER FORM
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ES Components	IRFC220B					1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRFC220 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFC220R		International Rectifier	IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die		Scan	PDF

IRFC220 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PD - 94770 IRFC2204B HEXFET Power MOSFET Die in Wafer Form N-CH D l l 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film G 40V RDS on = 3.6mΩ (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c Min. Typ. Max. Test Conditions	Original	PDF	IRFC2204B
irfc140 Abstract: IRFC9230 IRFC9140 IRFC9240 IRFC120 IRFC330 IRFC420 IRFC340 IRFC9130 irfc230 Text: SURFACE MOUNT DEVICES o PEAK RDS ON DEVICE B V o ss *D @0.5 (D PACKAGE PAK 1 TYPE VOLTS AMPS OHMS CHIP SNLC120 100 9.2 0.27 IRFC120 SNLC220 200 5.0 0.08 IRFC220 SNLC320 400 3.3 1.80 IRFC320 SNLC420 500 2.5 3.08 IRFC420 SNLC130 100 200 14.0 0.16 IRFC130 9.0	OCR Scan	PDF	SNLC120 SNLC220 SNLC320 SNLC420 SNLC130 SNLC230 SHLC330 SNLC430 SNLC140 SNLC240 irfc140 IRFC9230 IRFC9140 IRFC9240 IRFC120 IRFC330 IRFC420 IRFC340 IRFC9130 irfc230
IRFC430 Abstract: irfg 40 IRFC330 IRFC120 stf460 IRFCG40 IRFC420 IRFCF30 stf250 IRFC440 Text: MOSFETS N CHANNEL PO W ER M O SFETS PACKAGE T0213AA TO-66 PACKAGE T0204 (TO-3) DEVICE TYPE bvdss VOLTS STFJ120 100 STFJ130 RDS(ON) @0.5 'D OHMS •d CONTINUOUS AMPS PD MAX WATTS 40 CHIP 100 0.3 0.18 12.0 100 0.085 15.0 50 70 IRFG 30 STFJ140 STFJ220 0.8 5.0	OCR Scan	PDF	T0213AA STFJ120 STFJ130 STFJ140 STFJ220 STFK23Q STFJ240 STFJ320 STFJ330 STFJ340 IRFC430 irfg 40 IRFC330 IRFC120 stf460 IRFCG40 IRFC420 IRFCF30 stf250 IRFC440
IRFZ44 equivalent Abstract: IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFC110 IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30 Text: International l SRectifier HEXFET Power MOSFETs Table I. HEXFET III Die Recomnn. Source Bondi ig Wire Die 1 Outline Figure mils mm Equivalent Device Type HEX Size Part Number V DS Z IRFC1Z0 100 2.400 D1 3 0.08 IRFS1Z0 1 1 1 1 1 IRFC014 IRFC110 IRFC210 IRFC214	OCR Scan	PDF	IRFC014 IRFC110 IRFC210 IRFC214 IRFC310 IRFC024 IRFC120 IRFC220 IRFC224 IRFC320 IRFZ44 equivalent IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30
1RF640 Abstract: 1RFZ44 1RFBE30 equivalent irf840 IRFBg30 equivalent irf540 equivalent IRFC214 IRF51 1RFZ14 1RFC430 Text: HEXFET* Power MOSFETs International Z p S IÖR Rectifier *-:f4 « t -'ÏM .i ! ¿A,' «V ' HEX Siie Part Number Recommended Source Bonding Wire ^DS on Die Outline Figure mils mm V ds Equivalent Device Type HEXFET Die N-Channel 4 .1 IRFC048 60 4 IRFCE40	OCR Scan	PDF	IRFC048 IRFCE40 1RFC430 1RFCC30 IRFCE30 IRFCF30 1RFC234 1RFC044 IRFC230 IRFC240 1RF640 1RFZ44 1RFBE30 equivalent irf840 IRFBg30 equivalent irf540 equivalent IRFC214 IRF51 1RFZ14
Cross Reference power MOSFET Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630 Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258	OCR Scan	PDF	T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
IRF1644 Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003 Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.	OCR Scan	PDF	100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140 10D05-10010. 10DF1100F8 10JF1-10JF4. 10JQ030-10JQ100. 1OJTF10-10JTF40 10MQ040-10MQ090. IRF1644 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
irf*234 n Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10 Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5	OCR Scan	PDF	4flSS455 irf*234 n IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
IRFC9130 Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430 Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power	OCR Scan	PDF	AN-955. AN-986. 0-60V AN-964D IRFC9130 irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
IRFZ44 equivalent Abstract: IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf234 n IRFCG50 IRFC034 Text: I I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS BVdss Drain Sourct Vofcag Vote PMt Numbtr Rd s m Ondate IMltMCI (Ohm) H E X -P a k M o d u l« P a ra lle l Chip N-Cham xel 60 IRFK4H054 100 IRFK4H150 200 IRFK4H250 400 IRFK4H350 500 IRFK4H450	OCR Scan	PDF	IRFK4H054 IRFK4H150 IRFK4H250 IRFK4H350 IRFK4H450 IRFK4HC50 IRFK4HE50 IRFK4J054 IRFK4J150 IRFK4J250 IRFZ44 equivalent IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034
IRFBE40 Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034 Text: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800	OCR Scan	PDF	IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 IRFK3D150 IRFK3D250 IRFK3D350 IRFBE40 IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
406J Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250 Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC	OCR Scan	PDF	2N6756 2N6758 2N6760 2N6762 2N6768 2N6770 IRFC130 IRFC230 IRFC330 IRFC430 406J JD 1801 IRFC9230 IRFC110 2N6847 irfc250
FL110 Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc Text: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case	OCR Scan	PDF	OT-89 OT-89 IRCC044 IRCC140 IRCC240 IRCC244 IRCC340 IRCC440 IRCC054 FL110 LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
HEXFET III - A new Generation of Power MOSFETs Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210 Text: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power	OCR Scan	PDF	AN-955. AN-986. AN-966. -250V AN-964D HEXFET III - A new Generation of Power MOSFETs irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210