IPD80R2K8CE, Search Results
IPD80R2K8CE, Price and Stock
Infineon Technologies AG IPD80R2K8CEATMA1MOSFET N-CH 800V 1.9A TO252-3 |
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IPD80R2K8CEATMA1 | Cut Tape | 4,860 | 1 |
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IPD80R2K8CEATMA1 | Reel | 15 Weeks | 2,500 |
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IPD80R2K8CEATMA1 | 9,018 |
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IPD80R2K8CEATMA1 | 4,940 | 768 |
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IPD80R2K8CEATMA1 | 2,500 | 15 Weeks | 2,500 |
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IPD80R2K8CEATMA1 | Cut Tape | 1 |
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IPD80R2K8CEATMA1 | 7,450 | 1 |
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IPD80R2K8CEATMA1 | 5,000 | 16 Weeks | 2,500 |
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IPD80R2K8CEATMA1 | 5,000 | 1 |
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Infineon Technologies AG IPD80R2K8CEBTMA1MOSFET N-CH 800V 1.9A TO252-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD80R2K8CEBTMA1 | Digi-Reel |
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Infineon Technologies AG IPD80R2K8CE800V CoolMOS CE Power MOSFET Power Field-Effect Transistor, 1.9A I(D), 800V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD80R2K8CE | 4,930 |
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IPD80R2K8CE | 1,171 |
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IPD80R2K8CE, Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPD80R2K8CEATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 1.9A TO252-3 | Original | |||
IPD80R2K8CEBTMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 1.9A TO252-3 | Original |