IPB180N06S4-H1 Search Results
IPB180N06S4-H1 Price and Stock
Infineon Technologies AG IPB180N06S4H1ATMA2MOSFET N-CH 60V 180A TO263-7 |
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IPB180N06S4H1ATMA2 | Digi-Reel | 7,667 | 1 |
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IPB180N06S4H1ATMA2 | Reel | 3,000 | 53 Weeks, 1 Days | 1,000 |
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IPB180N06S4H1ATMA2 | 3,033 |
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IPB180N06S4H1ATMA2 | 5,000 | 1,000 |
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IPB180N06S4H1ATMA2 | 5,000 | 12 Weeks | 1,000 |
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IPB180N06S4H1ATMA2 | Cut Tape | 1,058 | 1 |
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IPB180N06S4H1ATMA2 | 14 | 1 |
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IPB180N06S4H1ATMA2 | Cut Tape | 1,000 |
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IPB180N06S4H1ATMA2 | 13 Weeks | 1,000 |
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IPB180N06S4H1ATMA2 | 3,680 |
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Infineon Technologies AG IPB180N06S4H1ATMA1MOSFET N-CH 60V 180A TO263-7 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB180N06S4H1ATMA1 | Reel |
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IPB180N06S4H1ATMA1 | 14 | 1 |
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Infineon Technologies AG IPB180N06S4-H1POWER FIELD-EFFECT TRANSISTOR, 180A I(D), 60V, 0.0017OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB180N06S4-H1 | 21 |
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IPB180N06S4-H1 | 1,000 |
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IPB180N06S4-H1 | 1,570 |
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Others IPB180N06S4-H1 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB180N06S4-H1 | 6,005 |
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IPB180N06S4-H1 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPB180N06S4-H1 |
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Single: N-Channel 60V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 1.7 mOhm; ID (max): 180.0 A; RthJC (max): 0.6 K/W; | Original | |||
IPB180N06S4H1ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 180A TO263-7 | Original | |||
IPB180N06S4H1ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 180A TO263-7 | Original |