DATA SHEET OF IC 317
Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,
|
Original
|
|
PDF
|
77106
Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HN62408 Series 524288-Word x — Preliminary 16-B lt/l048576-Word x 8-Bit CMOS Mask Programmable ROM HN62408 Series is a 8-Mbit CMOS mask-programable ROM organized either as 524288-word x 16-Bit or as 1048576-Wod x 8Bit. It can be operated with a battery because of low power
|
OCR Scan
|
HN62408
524288-Word
lt/l048576-Word
524288-word
16-Bit
1048576-Wod
62408P
62408P
62408FP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HN62408 Series — Preliminary 524288-Word x 16-Bit/1048576-Word x 8-Bit CMOS Mask Programmable ROM H N 6 2 4 0 8 Series is a 8-M bit C M O S m ask-program able R O M organized either as 524288-w ord x 16-Bit or as 10 4857 6-W od x 8Bit. It can be operated with a battery because of low power
|
OCR Scan
|
HN62408
524288-Word
16-Bit/1048576-Word
524288-w
16-Bit
HN62408P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HN62408 Series — Preliminary 524288-Word x 16-Bit/1048576-Word x 8-Bit CMOS Mask Programmable ROM H N 6 2 4 0 8 Series is a 8-M bit C M O S m ask-program able R O M organized either as 524288-w ord x 16-Bit or as 10 4857 6-W od x 8Bit. It can be operated with a battery because of low power
|
OCR Scan
|
HN62408
524288-Word
16-Bit/1048576-Word
16-Bit
1048576-Wod
HN62408P
42-pin
|
PDF
|
HN62408
Abstract: HN62408FP HN62408P a51s Hitachi Scans-001 D1422 524,288-word x 16-bit
Text: HN62408 Series — Preliminary 524288-Word x 16-Bit/1048576-Word x 8-Bit CMOS Mask Programmable ROM H N 6 2 4 0 8 Series is a 8-M bit C M O S m ask-program able R O M organized either as 524288-w ord x 16-Bit or as 10 4857 6-W od x 8Bit. It can be operated with a battery because of low power
|
OCR Scan
|
HN62408
524288-Word
16-Bit/1048576-Word
16-Bit
1048576-Wod
HN62408P
42-pin
HN62408FP
a51s
Hitachi Scans-001
D1422
524,288-word x 16-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HN66403P Seríes 524,288 x 16-Bit/I ,048,576 x 8-Bit CMOS MASK Programmable Read Only Memory 4^ • DESCRIPTION The HN66403P is an 8-Mbit CMOS mask-programmable ROM module consisted of 2 pieces of HN62404 products and HD74HC00 equivalent product. Realizing low power consumption, this memory
|
OCR Scan
|
HN66403P
16-Bit/I
HN62404
HD74HC00
HN66403P,
DP-42)
250ns
100mW
6403P------------------------------------
|
PDF
|
toshiba 32k*8 sram
Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258
|
OCR Scan
|
KM4164
KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
toshiba 32k*8 sram
M5M23C100
M5M5265
seeq DQ2816A
M5M23C400
MB832001
HITACHI 64k DRAM
TC511000
TC51464
|
PDF
|
rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
|
OCR Scan
|
|
PDF
|
flash 32 Pin PLCC 16mbit
Abstract: 398x
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
|
OCR Scan
|
|
PDF
|
41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
|
OCR Scan
|
41C256
41C257
41C258
41C464
41C466
41C1000
44C256
44C258
44C1002
TC51257
fujitsu 814100
TC 55464 toshiba
HN62304
hn623257
658128
816b
hn62324
M7202A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HN66403P Series 524,288 x 16-Bit/1,048,576 x 8-Bit CMOS MASK Programmable Read Only Memory • DESCRIPTION The HN66403P is an 8-Mbit CMOS mask-programmable ROM module consisted of 2 pieces of HN62404 products and HD74HC00 equivalent product. Realizing low power consumption, this memory
|
OCR Scan
|
HN66403P
16-Bit/1
HN62404
HD74HC00
HN66403P,
DP-42)
250ns
100mW
403P-------------------------------------
|
PDF
|
41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
|
OCR Scan
|
41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
|
PDF
|
K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
|
OCR Scan
|
416C256
14800A
14900A
514170B
514280B
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
HN624017FB
K93C46
93cs46n
MB832001
hn62308
41C1000
93C46LN
41464
hn623257
HM63832
DT71256
|
PDF
|
|
|
CBV2
Abstract: 27x10
Text: Reliability o f Hitachi IC Memories 1. Structure IC m em ory devices are classified as N M O S type, C M O S type, and B i-C M O S type. T here are advantages to it's circuit design, layout pattern, degree o f integration, and m anufacturing process. A ll H itachi m em ories are produced using standardized design, m anufacturing, and inspection techniques.
|
OCR Scan
|
|
PDF
|
CBV2
Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
|
OCR Scan
|
|
PDF
|
CBV2
Abstract: HN27C301
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
|
OCR Scan
|
|
PDF
|
101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
|
OCR Scan
|
ADE-40
101490
P22n
HM50464P-12
50464 ram
|
PDF
|
al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
|
OCR Scan
|
KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
KM44C258
al 232 nec
TC55B4257
MB832001
NM9306
eeprom Cross Reference
D41264
TC5116100
HN28C256
NM9307
oki cross reference
|
PDF
|