Hitachi DSA00281
Abstract: No abstract text available
Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995C (Z) Rev. 2.0 May. 11, 2001 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W25611
057-sector
072-bit)
ADE-203-995C
D-85622
Hitachi DSA00281
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PDF
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Hitachi DSAUTAZ006
Abstract: No abstract text available
Text: HN29W25611S Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1233B (Z) Rev. 2.0 Mar. 8, 2001 Description The Hitachi HN29W25611S Series is CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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Original
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HN29W25611S
057-sector
072-bit)
ADE-203-1233B
HN29W25611ST-80
48-pin
TFP-48D)
Hitachi DSAUTAZ006
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PDF
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800H
Abstract: ADE-203-1178A HN29W25611T HN29W25611T-50H sa 2111 Hitachi DSA00358
Text: HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1178A (Z) Rev. 1.0 May. 10, 2000 Description The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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Original
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HN29W25611T-50H
057-sector
072-bit)
ADE-203-1178A
HN29W25611T
16nents
800H
ADE-203-1178A
HN29W25611T-50H
sa 2111
Hitachi DSA00358
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PDF
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Hitachi DSAUTAZ006
Abstract: No abstract text available
Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995B (Z) Rev. 1.0 Dec. 10, 1999 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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Original
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HN29W25611
057-sector
072-bit)
ADE-203-995B
057rase
HN29W25611T-50
48-pin
Hitachi DSAUTAZ006
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PDF
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Untitled
Abstract: No abstract text available
Text: HN29W25611S Series Block Diagram Sector address buffer X-decoder 16384 x 2048 + 64 × 8 memory matrix Data register (2048 + 64) •• I/O0 to I/O7 • • 16057 - 16384 2048 + 64 • Multiplexer • Data input buffer • • Input data control • •
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HN29W25611S
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800H
Abstract: HN29W25611T HN29W25611T-50H Hitachi DSA0014
Text: HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1178B (Z) Rev. 2.0 May. 15, 2001 Description The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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Original
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HN29W25611T-50H
057-sector
072-bit)
ADE-203-1178B
HN29W25611T
800H
HN29W25611T-50H
Hitachi DSA0014
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PDF
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Hitachi DSAUTAZ005
Abstract: No abstract text available
Text: HN29W25611T-50H Package Dimensions HN29W25611T Series TFP-48D 12.00 12.40 Max 25 18.40 48 Unit: mm 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 0.80 20.00 ± 0.20 0° – 5°
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HN29W25611T-50H
HN29W25611T
TFP-48D)
TFP-48D
Hitachi DSAUTAZ005
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PDF
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ICC4
Abstract: Hitachi DSAUTAZ006
Text: HN29W51214S Series 512M AND type Flash Memory More than 16,057-sector 271,299,072-bit x 2 ADE-203-1155C (Z) Rev. 3.0 Mar. 8, 2001 Description The Hitachi HN29W51214S Series is stacked 2 chips Hitachi 256-Mbit Flash memory (HN29W25611S) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase
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Original
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HN29W51214S
057-sector
072-bit)
ADE-203-1155C
256-Mbit
HN29W25611S)
HN29W25611S
HN29W51214ST-80
ICC4
Hitachi DSAUTAZ006
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PDF
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O2-A2
Abstract: sa 2111 800H HN29W25611 HN29W25611T-50 Hitachi DSA0023 Hitachi DSA00230
Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995B (Z) Rev. 1.0 Dec. 10, 1999 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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Original
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HN29W25611
057-sector
072-bit)
ADE-203-995B
O2-A2
sa 2111
800H
HN29W25611T-50
Hitachi DSA0023
Hitachi DSA00230
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PDF
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Hitachi DSA00170
Abstract: No abstract text available
Text: HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADJ-203-546A (Z) ’00. 5. 10 Rev. 1.0 概要 HN 29 W2 56 11 T は単一電源(3. 3V )で自動書き込みおよび自動消去が可能な多値 AN D 型メモリセルを用い
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HN29W25611T-50H
057-sector
072-bit)
ADJ-203-546A
HN29W25611T
48-pin
Hitachi DSA00170
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PDF
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2112N
Abstract: CA2CE Hitachi DSA00176
Text: HN29W25611 シリ−ズ 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADJ-203-412B (Z) ’99. 11. 17 Rev. 1.0 概要 HN29W25611 シリ−ズは単一電源(3.3V)で自動書き込みおよび自動消去が可能な多値 AND型メモリセル
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HN29W25611
057-sector
072-bit)
ADJ-203-412B
HN29W25611
HN29W25611T-50
48-pin
TFP-48D)
2112N
CA2CE
Hitachi DSA00176
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PDF
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Hitachi DSA002710
Abstract: No abstract text available
Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995 (Z) Preliminary, Rev. 0.0 Jan. 8, 1999 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The
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Original
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HN29W25611
057-sector
072-bit)
ADE-203-995
Hitachi DSA002710
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PDF
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Hitachi DSAUTAZ006
Abstract: No abstract text available
Text: HN29W25611S Series Package Dimensions HN29W25611ST Series TFP-48D 12.00 12.40 Max 25 18.40 48 Unit: mm 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 40 0.80 20.00 ± 0.20 0° – 5°
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HN29W25611S
HN29W25611ST
TFP-48D)
TFP-48D
Hitachi DSAUTAZ006
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PDF
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Hitachi DSAUTAZ006
Abstract: No abstract text available
Text: HN29W25611S Series Package Dimensions HN29W25611ST Series TFP-48D 12.00 12.40 Max Unit: mm 25 18.40 48 As of January, 2001 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 40 0.80
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HN29W25611S
HN29W25611ST
TFP-48D)
TFP-48D
Hitachi DSAUTAZ006
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Hitachi DSAUTAZ006
Abstract: No abstract text available
Text: HN29W25611S Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1233C (Z) Rev. 3.0 Oct. 22, 2001 Description The Hitachi HN29W25611S Series is CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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Original
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HN29W25611S
057-sector
072-bit)
ADE-203-1233C
HN29W25611ST-80
48-pin
TFP-48D)
Hitachi DSAUTAZ006
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PDF
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diode matrix diagram
Abstract: buffer if multiplexer multiplexer 64 pin configuration NPN transistor tip42c
Text: HN29W25611S Series Block Diagram Sector address buffer X-decoder 16384 x 2048 + 64 × 8 memory matrix Data register (2048 + 64) •• I/O0 to I/O7 • • Multiplexer 16057 - 16384 2048 + 64 • • Data input buffer • • Input data control • •
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HN29W25611S
diode matrix diagram
buffer
if multiplexer
multiplexer 64
pin configuration NPN transistor tip42c
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PDF
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Hitachi DSAUTAZ005
Abstract: No abstract text available
Text: HN29W25611 Series Package Dimensions HN29W25611T Series TFP-48D 12.00 12.40 Max 25 18.40 48 Unit: mm 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 0.80 20.00 ± 0.20 0° – 5°
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HN29W25611
HN29W25611T
TFP-48D)
TFP-48D
Hitachi DSAUTAZ005
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PDF
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Untitled
Abstract: No abstract text available
Text: HN29W25611S Series Pin Arrangement 48-pin TSOP VCC VSS VSS VSS VSS RES RDY/Busy SC OE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 CDE WE CE VSS VSS 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14
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HN29W25611S
48-pin
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PDF
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Hitachi DSAUTAZ006
Abstract: No abstract text available
Text: HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1178A (Z) Rev. 1.0 May. 10, 2000 Description The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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Original
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HN29W25611T-50H
057-sector
072-bit)
ADE-203-1178A
HN29W25611T
HN29W25611T-50H
48-pin
TFP-48D)
Hitachi DSAUTAZ006
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PDF
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Untitled
Abstract: No abstract text available
Text: HN29W25611 Series Pin Arrangement 48-pin TSOP VSS VCC OE I/O0 I/O1 I/O2 I/O3 VSS NC NC NC NC NC NC NC NC VCC I/O4 I/O5 I/O6 I/O7 SC VSS VSS 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
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HN29W25611
48-pin
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pd2111
Abstract: 800H HN29W25611ST-80 Hitachi DSA0014 d2111
Text: HN29W25611S Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1233C (Z) Rev. 3.0 Oct. 22, 2001 Description The Hitachi HN29W25611S Series is CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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Original
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HN29W25611S
057-sector
072-bit)
ADE-203-1233C
pd2111
800H
HN29W25611ST-80
Hitachi DSA0014
d2111
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PDF
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Hitachi DSA0091
Abstract: HN29W51214ST-80
Text: HN29W51214S Series 512M AND type Flash Memory More than 16,057-sector 271,299,072-bit x 2 ADE-203-1155C (Z) Rev. 3.0 Mar. 8, 2001 Description The Hitachi HN29W51214S Series is stacked 2 chips Hitachi 256-Mbit Flash memory (HN29W25611S) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase
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Original
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HN29W51214S
057-sector
072-bit)
ADE-203-1155C
256-Mbit
HN29W25611S)
HN29W25611S
Hitachi DSA0091
HN29W51214ST-80
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PDF
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Hitachi DSA002781
Abstract: No abstract text available
Text: HN29W51214S Series 512M AND type Flash Memory More than 16,057-sector 271,299,072-bit x 2 ADE-203-1155 (Z) Preliminary Rev. 0.0 Jan. 24, 2000 Description The Hitachi HN29W51214S Series is stacked 2 chips Hitachi 256-Mbit Flash memory (HN29W25611S) that
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Original
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HN29W51214S
057-sector
072-bit)
ADE-203-1155
256-Mbit
HN29W25611S)
HN29W25611S
Hitachi DSA002781
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PDF
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Untitled
Abstract: No abstract text available
Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit HITACHI ADE-203-995 (Z) Preliminary, Rev. 0.0 Jan. 8, 1999 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The
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OCR Scan
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HN29W25611
057-sector
072-bit)
ADE-203-995
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PDF
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