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Toshiba America Electronic Components HN1D03FTE85LF DIODE ARRAY GP 80V 100MA SC74
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1D03FTE85LF	Cut Tape	23,738		1	1 $0.37 10 $0.229 100 $0.37 1000 $0.09498 10000 $0.09498	Buy Now
	HN1D03FTE85LF	Digi-Reel	23,738		1	1 $0.37 10 $0.229 100 $0.37 1000 $0.09498 10000 $0.09498	Buy Now
	HN1D03FTE85LF	Reel	21,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0798	Buy Now
Mouser Electronics	HN1D03FTE85LF		13,250			1 $0.28 10 $0.186 100 $0.093 1000 $0.084 10000 $0.056	Buy Now
Toshiba America Electronic Components HN1D03FU,LF DIODE ARRAY GP 80V 80MA US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1D03FU,LF	Digi-Reel	4,277		1	1 $0.31 10 $0.192 100 $0.31 1000 $0.07884 10000 $0.07884	Buy Now
	HN1D03FU,LF	Cut Tape	4,277		1	1 $0.31 10 $0.192 100 $0.31 1000 $0.07884 10000 $0.07884	Buy Now
	HN1D03FU,LF	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.06591	Buy Now
Avnet Americas	HN1D03FU,LF	Reel		20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.04917	Buy Now
Mouser Electronics	HN1D03FU,LF		5,553			1 $0.26 10 $0.169 100 $0.077 1000 $0.069 10000 $0.045	Buy Now
Toshiba America Electronic Components HN1D03FU,LF(T Diode Switching Si 85V 0.1A 6-Pin US T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	HN1D03FU,LF(T		2,775		338	1 - 10 - 100 - 1000 $0.0751 10000 $0.0703	Buy Now
Newark	HN1D03FU,LF(T	Cut Tape	3,000		5	1 $0.353 10 $0.27 100 $0.128 1000 $0.085 10000 $0.085	Buy Now
	HN1D03FU,LF(T	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.052	Buy Now
Chip1Stop	HN1D03FU,LF(T	Cut Tape	2,775			1 - 10 - 100 $0.0805 1000 $0.0597 10000 $0.0558	Buy Now
EBV Elektronik	HN1D03FU,LF(T			13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components HN1D03FTE(85LF) Diode Switching 85V 0.1A 6-Pin SM T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	HN1D03FTE(85LF)		335		230	1 - 10 - 100 - 1000 $0.1363 10000 $0.1363	Buy Now
Toshiba America Electronic Components HN1D03FU TE85R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	HN1D03FU TE85R		6,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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HN1D03F Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
HN1D03F	Toshiba	Application Specific Diode Array	Original	PDF
HN1D03F	Toshiba	Silicon Epitaxial Planar Type	Original	PDF
HN1D03FTE85LF	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 100MA SM6	Original	PDF
HN1D03FU	Toshiba	Silicon epitaxial planar type diode for ultra high speed switching application	Original	PDF
HN1D03FU	Toshiba	DIODE	Scan	PDF
HN1D03FU,LF	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 80MA US6	Original	PDF
HN1D03FU(T5L,F,T)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC/CA US6	Original	PDF
HN1D03FU(TE85L,F)	Toshiba	HN1D03FU - Diode Switching 85V 0.08A 6-Pin US T/R	Original	PDF

HN1D03F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HN1D03F Abstract: No abstract text available Text: HN1D03F 東芝ダイオードシリコンエピタキシャルプレーナ形ダイオード HN1D03F ○ 超高速スイッチング用単位: mm z アノードコモンとカソードコモンの 2 ユニットを内蔵。 Unit 1 Q1､Q2: VF 3 = 0.90V (標準)	Original	PDF	HN1D03F 100mA HN1D03F
Untitled Abstract: No abstract text available Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)	Original	PDF	HN1D03FU
HN1D03F Abstract: No abstract text available Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application l Built in anode common and cathode common. Unit 1 l Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) l Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)	Original	PDF	HN1D03F HN1D03F
Untitled Abstract: No abstract text available Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)	Original	PDF	HN1D03FU
HN1D03FU Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)	Original	PDF	HN1D03FU HN1D03FU TOSHIBA "ULTRA HIGH SPEED" DIODE
HN1D03F Abstract: No abstract text available Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)	Original	PDF	HN1D03F HN1D03F
HN1D03FU Abstract: No abstract text available Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)	Original	PDF	HN1D03FU HN1D03FU
Untitled Abstract: No abstract text available Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Ultra High Speed Switching Application Unit in mm Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)	Original	PDF	HN1D03F 961001EAA2'
Untitled Abstract: No abstract text available Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)	Original	PDF	HN1D03F
HN1D03FU Abstract: No abstract text available Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)	Original	PDF	HN1D03FU HN1D03FU
Untitled Abstract: No abstract text available Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Ultra High Speed Switching Application Unit in mm Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)	Original	PDF	HN1D03FU 100mA
HN1D03FU Abstract: No abstract text available Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application l Built in anode common and cathode common. Unit 1 l Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) l Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)	Original	PDF	HN1D03FU HN1D03FU
Untitled Abstract: No abstract text available Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)	Original	PDF	HN1D03F
HN1D03FU Abstract: No abstract text available Text: HN1D03FU 東芝ダイオードシリコンエピタキシャルプレーナ形ダイオード HN1D03FU ○ 超高速スイッチング用単位: mm z アノードコモンとカソードコモンの 2 ユニットを内蔵。 Unit 1 Q1､Q2: VF 3 = 0.90V (標準)	Original	PDF	HN1D03FU HN1D03T 100mA HN1D03FU

Untitled Abstract: No abstract text available Text: SILICON EPITAXIAL PLANAR TYPE HN1D03FU ULTRA HIGH SPEED SW ITCHING APP LIC A TIO N . • U nit in mm Built in Anode Common and Cathode Common. U nit 1 • Low Forward Voltage Q l, Q2 : Vp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : trr = 1.6ns (Typ.)	OCR Scan	PDF	HN1D03FU 100mA
Untitled Abstract: No abstract text available Text: SILICON EPITAXIAL PLANAR TYPE HN1D03F Unit in ULTRA HIGH SPEED SWITCHING APPLICATION rm + 0.2 2.8 - 0 . 3 . Built in Anode Common and Cathode Common. 1.6 Unit 1 + 0.2 - 0.1 □ 3 . Low Forward Voltage Q1,Q2 Vp=0.90V Typ. . Fast Reverse Recovery Time Ql,Q2	OCR Scan	PDF	HN1D03F 100mA
Untitled Abstract: No abstract text available Text: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.1 Í 0.1 U nit 1 1.25±0.1 Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.)	OCR Scan	PDF	HN1D03FU D03FU
Untitled Abstract: No abstract text available Text: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.1 db0.1 U nit 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : trr= 1.6ns (Typ.)	OCR Scan	PDF	HN1D03FU N1D03FU 100UG
Untitled Abstract: No abstract text available Text: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N1 n n 3F m m m 'm m mmr w mm • Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. Built in Anode Common and Cathode Common. + 0.2 .1.6 -0.1. Unit 1 • Low Forward Voltage • Fast Reverse Recovery Time	OCR Scan	PDF	HN1D03F
Untitled Abstract: No abstract text available Text: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. • Unit in mm + 0.2 Built in Anode Common and Cathode Common. 2.8-0.3 + 0.2 1.6 Unit 1 • Low Forward Voltage Q l, Q2 : VF 3 = 0.90V (Typ.) •	OCR Scan	PDF	HN1D03F
Untitled Abstract: No abstract text available Text: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h n i n n 3 F 11 m m m 'm m m mr v • ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. TT. *j H unit x 2 .i± a i 1.25±0.1 • Low Forw ard Voltage	OCR Scan	PDF	HN1D03FU
HN1D03FU Abstract: No abstract text available Text: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. 2.1 db0.1 U n it 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.)	OCR Scan	PDF	HN1D03FU N1D03FU HN1D03FU
Untitled Abstract: No abstract text available Text: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. • Unit in mm Built in Anode Common and Cathode Common. 2 .8 + 0.2 0.3 - + 0.2 1.6 Unit 1 • Low Forward Voltage Q l, Q2 : VF 3 = 0.90V (Typ.) •	OCR Scan	PDF	HN1D03F
Untitled Abstract: No abstract text available Text: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.Ü0.1 U nit 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.)	OCR Scan	PDF	HN1D03FU D03FU

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HN1D03F Price and Stock

Toshiba America Electronic Components HN1D03FTE85LF

Toshiba America Electronic Components HN1D03FU,LF

Toshiba America Electronic Components HN1D03FU,LF(T

Toshiba America Electronic Components HN1D03FTE(85LF)

Toshiba America Electronic Components HN1D03FU TE85R

HN1D03F Datasheets (8)

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