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    HM62W4100H Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HM62W4100H Hitachi Semiconductor 4M High Speed SRAM (1-Mword x 4-bit) Original PDF
    HM62W4100HC Hitachi Semiconductor 4M High Speed SRAM (1-Mword x 4-bit) Original PDF
    HM62W4100HCJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM62W4100HCJP-10 Hitachi Semiconductor 4M High Speed SRAM (1-Mword x 4-bit) Original PDF
    HM62W4100HCJP-10 Renesas Technology 4M High Speed SRAM (1 MWord x 4 Bit) Original PDF
    HM62W4100HCJP-12 Renesas Technology 4M High Speed SRAM (1 MWord x 4 Bit) Original PDF
    HM62W4100HCJP/HCLJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM62W4100HCJP-HCLJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM62W4100HCLJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM62W4100HCLJP-10 Hitachi Semiconductor 4M High Speed SRAM (1-Mword x 4-bit) Original PDF
    HM62W4100HCLJP-10 Renesas Technology 4M High Speed SRAM (1 MWord x 4 Bit) Original PDF
    HM62W4100HCLJP-12 Renesas Technology 4M High Speed SRAM (1 MWord x 4 Bit) Original PDF
    HM62W4100HC Series Renesas Technology 4M High Speed SRAM (1-Mword x 4-bit) Original PDF
    HM62W4100HJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM62W4100HJP-10 Hitachi Semiconductor 1048576-word x 4-bit High Speed CMOS Static RAM Original PDF
    HM62W4100HJP-12 Hitachi Semiconductor 4M High Speed SRAM (1-Mword x 4-bit) Original PDF
    HM62W4100HJP-12 Hitachi Semiconductor 1048576-word x 4-bit High Speed CMOS Static RAM Original PDF
    HM62W4100HJP-12 Renesas Technology 4M High Speed SRAM (1-Mword x 4-bit) Original PDF
    HM62W4100HJP-15 Hitachi Semiconductor 1048576-word x 4-bit High Speed CMOS Static RAM Original PDF
    HM62W4100HJP-15 Hitachi Semiconductor 4M High Speed SRAM (1-Mword x 4-bit) Original PDF

    HM62W4100H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-774B (Z) Preliminary Rev. 0.2 Dec. 5, 1997 Description The HM62W4100H is an asyncronous high speed static RAM organized as 1-Mword × 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 µm CMOS process (4-transistor + 2-poly resistor


    Original     		PDF HM62W4100H ADE-203-774B 400-mil 32-pin

    Untitled

    Abstract: No abstract text available
    Text: HM62W4100HC Series Pin Arrangement 32-pin SOJ A0 A1 A2 A3 A4 CS I/O1 VCC VSS I/O2 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A19 A18 A17 A16 A15 OE I/O4 VSS VCC I/O3 A14 A13 A12 A11 A10 NC Top view


    Original     		PDF HM62W4100HC 32-pin

    HM62W4100H

    Abstract: HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA0044
    Text: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-774D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed


    Original     		PDF HM62W4100H ADE-203-774D 400-mil 32-pin HM62W4100H-10 HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA0044

    Hitachi DSA00176

    Abstract: No abstract text available
    Text: HM62W4100HC シリーズ 4M High Speed SRAM 1-Mword x 4-bit ADJ-203-569 (Z) 暫定仕様 Rev. 0.0 ’00. 9. 28 概要 HM6 2W 41 00 HC シリーズは 1 M ワード×4 ビット構成の 4 M ビット高速スタティック RA M です。CMO S （6 トランジスタメモリセ ル）プロセス技術を採用し，高密度，高性能，低消 費電力を実現しました。し


    Original     		PDF HM62W4100HC ADJ-203-569 400-mil 32-pin 115mA HM62W4100HCJP-10 HM62W4100HCLJP-10 32-pin Hitachi DSA00176

    Hitachi DSAUTAZ005

    Abstract: No abstract text available
    Text: HM62W4100H Series Package Dimensions HM62W4100HJP/HLJP Series CP-32DB Unit: mm 3.50 ± 0.26 1.30 Max 0.43 ± 0.10 0.41 ± 0.08 1.27 0.10 Dimension including the plating thickness Base material dimension 12 2.85 ± 0.12 16 0.74 0.80 +0.25 –0.17 1 11.18 ± 0.13


    Original     		PDF HM62W4100H HM62W4100HJP/HLJP CP-32DB) CP-32DB Hitachi DSAUTAZ005

    HM62W4100HC

    Abstract: HM62W4100HCJP-10 HM62W4100HCLJP-10 Hitachi DSA00358
    Text: HM62W4100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1202 (Z) Preliminary Rev. 0.0 Sep. 28, 2000 Description The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing


    Original     		PDF HM62W4100HC ADE-203-1202 400-mil 32-pin Directl2100 HM62W4100HCJP-10 HM62W4100HCLJP-10 Hitachi DSA00358

    HM62W4100H

    Abstract: No abstract text available
    Text: HM62W4100H Series Pin Description Pin name Function A0 to A19 Address input I/O1 to I/O4 Data input/output CS Chip select OE Output enable WE Write enable VCC Power supply VSS Ground NC No connection Block Diagram LSB A1 A17 A7 A11 A16 A2 A6 A5 (MSB) VCC


    Original     		PDF HM62W4100H

    HM62W4100HC

    Abstract: HM62W4100HCJP-10 HM62W4100HCJP-12 HM62W4100HCLJP-10 HM62W4100HCLJP-12 Hitachi DSA00316
    Text: HM62W4100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1202C (Z) Rev. 2.0 Nov. 9, 2001 Description The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing


    Original     		PDF HM62W4100HC ADE-203-1202C 400-mil 32-pin D-85622 D-85619 HM62W4100HCJP-10 HM62W4100HCJP-12 HM62W4100HCLJP-10 HM62W4100HCLJP-12 Hitachi DSA00316

    HM62W4100H

    Abstract: HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00189
    Text: HM62W4100H シリーズ 4M High Speed SRAM 1-Mword x 4-bit ADJ-203-266B (Z) ’98. 9. 15 Rev. 1.0 概要 HM62W4100H シリーズは 1M ワード×4 ビット構成の 4M ビット高速スタティック RAM です。CMOS（4 トランジスタ+2 ポリレジスタメモリセル）プロセス技術を採用し，高密度，高性能，低消費電力を実現し


    Original     		PDF HM62W4100H ADJ-203-266B 400-mil 32-pin 12/15ns 180/160mA 60/50mA HM62W4100HJP-12 HM62W4100H HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00189

    diode a3

    Abstract: transistor a13 HM62W4100HC
    Text: HM62W4100HC Series Block Diagram LSB A14 A13 A12 A5 A6 A7 A11 A10 A3 A1 VCC Row decoder (MSB) VSS CS Column I/O I/O1 . . . I/O4 Input data control (LSB) WE CS OE CS 4 1024-row x 64-column × 16-block × 4-bit (4,194,304 bits) Column decoder A8 A9 A19 A17 A18 A15 A0 A2 A4 A16


    Original     		PDF HM62W4100HC 1024-row 64-column 16-block diode a3 transistor a13

    HM62W4100H

    Abstract: HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00200
    Text: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-774D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed


    Original     		PDF HM62W4100H ADE-203-774D 400-mil 32-pin HM62W4100H-10 HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00200

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: HM62W4100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1202A (Z) Preliminary Rev. 0.1 May. 29, 2001 Description The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing


    Original     		PDF HM62W4100HC ADE-203-1202A 400-mil 32-pin D-85622 Hitachi DSA00276

    CP-32DB

    Abstract: Hitachi DSAUTAZ006
    Text: HM62W4100HC Series Package Dimensions HM62W4100HCJP/HCLJP Series CP-32DB As of January, 2001 Unit: mm 3.50 ± 0.26 1.30 Max *0.43 ± 0.10 0.41 ± 0.08 1.27 2.85 ± 0.12 16 0.74 0.80 +0.25 –0.17 1 11.18 ± 0.13 17 10.16 ± 0.13 32 20.71 21.08 Max 9.40 ± 0.25


    Original     		PDF HM62W4100HC HM62W4100HCJP/HCLJP CP-32DB) CP-32DB Hitachi DSAUTAZ006

    HM62W4100H

    Abstract: HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00316
    Text: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-774D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed


    Original     		PDF HM62W4100H ADE-203-774D 400-mil 32-pin HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00316

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HM62W4100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1202A (Z) Preliminary Rev. 0.1 May. 29, 2001 Description The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing


    Original     		PDF HM62W4100HC ADE-203-1202A 400-mil 32-pin Hitachi DSAUTAZ006

    Untitled

    Abstract: No abstract text available
    Text: HM62W4100H Series Ordering Information Type No. Access time Package HM62W4100HJP-12 HM62W4100HJP-15 12 ns 15 ns 400-mil 32-pin plastic SOJ CP-32DB HM62W4100HLJP-12 HM62W4100HLJP-15 12 ns 15 ns Pin Arrangement HM62W4100HJP/HLJP Series A0 A1 A2 A3 A4 CS I/O1


    Original     		PDF HM62W4100H HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 400-mil 32-pin CP-32DB) HM62W4100HJP/HLJP

    HM62W4100H

    Abstract: HM62W4100HJP-10 HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-10 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00182
    Text: HM62W4100H Series 1048576-word x 4-bit High Speed CMOS Static RAM ADE-203-774 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W4100H is an asyncronous high speed static RAM organized as 1-Mword × 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 µm CMOS process and high speed circuit


    Original     		PDF HM62W4100H 1048576-word ADE-203-774 400-mil 32-pin ns/12 ns/15 D-85622 HM62W4100HJP-10 HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-10 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00182

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original     		PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash

    Untitled

    Abstract: No abstract text available
    Text: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-774C (Z) Preliminary, Rev. 0.3 May 15, 1998 Description The HM62W4100H is an asynchronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process (4-transistor + 2poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the


    OCR Scan     		PDF HM62W4100H ADE-203-774C 400-mil 32-pin

    Untitled

    Abstract: No abstract text available
    Text: HM62W4100H Series 1048576-word X 4-bit High Speed CMOS Static RAM HITACHI ADE-203-774 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W4100H is an asynchronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 )im CMOS process and high speed


    OCR Scan     		PDF HM62W4100H 1048576-word ADE-203-774 400-mil 32-pin ns/12 ns/15 HM62W4X00H

    Untitled

    Abstract: No abstract text available
    Text: HM62W4100H Series 1048576-word x 4-bit High Speed CMOS Static RAM HITACHI ADE-203-774 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W4100H is an asyncronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (im CMOS process and high speed circuit


    OCR Scan     		PDF HM62W4100H 1048576-word ADE-203-774 400-mil 32-pin ns/12 ns/15 D-85622

    Untitled

    Abstract: No abstract text available
    Text: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-774A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W4100H is an asynchronous high speed static RAM organized as 1-Mword X 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed


    OCR Scan     		PDF HM62W4100H ADE-203-774A 400-mil 32-pin ns/12 ns/15

    Untitled

    Abstract: No abstract text available
    Text: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-774A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W4100H is an asynchronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed


    OCR Scan     		PDF HM62W4100H ADE-203-774A 400-mil 32-pin ns/12 ns/15

    Untitled

    Abstract: No abstract text available
    Text: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-774D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword x 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed


    OCR Scan     		PDF HM62W4100H ADE-203-774D 400-mil 32-pin HM62W4100H-10